| Patent application number | Description | Published |
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| 20080238420 | MAGNETIC SENSOR - The magnetic sensor comprises a spin-valve GMR including a free layer having an elongated form as seen in a laminating direction and a permanent magnet layer having an elongated form as seen in the laminating direction. The permanent magnet layer is arranged in parallel with the free layer. | 10-02-2008 |
| 20090121819 | Magnetic coupler - A magnetic coupler having higher response is provided. The magnetic coupler includes a thin film coil wound in a first layer; a first MR element being disposed in a second layer, and detecting an induced magnetic field generated by a signal current flowing through the thin film coil; and yokes being disposed close to the first MR element, and including a soft magnetic material. The first MR element is disposed in a position corresponding to a linear region of the thin film coil in a stacking direction. The yokes are disposed at both of an inner turn side and an outer turn side of the thin film coil in a manner of interposing the first MR element in the second layer. Thus, reduction in intensity of the induced magnetic field is suppressed, and intensity distribution of the induced magnetic field becomes flatter. | 05-14-2009 |
| 20100248623 | Signal transmission device - A signal transmission device includes: an input signal conductor in which an input signal current flows and thereby generating an input signal magnetic field; a magnetically-biasing conductor in which a biasing current flows and thereby generating a biasing magnetic field; and one or more magnetoresistive elements in each of which a sensing current flows and thereby generating a self-biasing magnetic field, and each including a magnetization free layer having a magnetization direction which varies in response to the input signal magnetic field, the biasing magnetic field, and the self-biasing magnetic field. Each of the biasing magnetic field and the self-biasing magnetic field is applied to the magnetization free layer in a same direction to each other. | 09-30-2010 |
| 20110042127 | ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF - The invention provides an electronic component and a manufacturing method thereof that: can allow electronic components to be mounted on an external substrate at a higher density than before; can adjust the height (level) of a terminal electrode as required and desired, thereby solving problems that would occur in the inspection of the conventional electronic components; and can also improve the yield in the mounting of electronic components, thereby achieving increased productivity. A capacitor | 02-24-2011 |
| 20110044011 | ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF - The invention provides an electronic component and a manufacturing method thereof that can achieve an improved adhesion strength when the electronic component is solder-mounted onto an external substrate and can thereby obtain considerably improved electric properties and reliabilities, etc. An electronic component, which is a capacitor | 02-24-2011 |
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| 20080246096 | Semiconductor device including schottky barrier diode and method of manufacturing the same - A semiconductor device includes a substrate, a plurality of first columns having a first conductivity type, a plurality of second columns having a second conductivity type, a first electrode, and a second electrode. The first columns and the second columns are alternately arranged on the substrate to provide a super junction structure. The first electrode is disposed on the super junction structure, forms schottky junctions with the first columns, and forms ohmic junctions with the second columns. The second electrode is disposed on the substrate on an opposite side of the super junction structure. At least a part of the substrate and the super junction structure has lattice defects to provide a lifetime control region at which a lifetime of a minority carrier is controlled to be short. | 10-09-2008 |
| 20090032965 | Seminconductor device having P-N column portion - A semiconductor device includes: a first semiconductor layer; a p-n column portion over the first semiconductor layer and including second and third semiconductor layers, which are alternately arranged; and a peripheral portion adjacently to the p-n column portion and including a fourth semiconductor layer. An end second semiconductor layer has an impurity amount equal to or larger than a half of other second semiconductor layers. The third semiconductor layers include a large impurity amount portion adjacent to the end second semiconductor layer. The large impurity amount portion includes at least one third semiconductor layer having an impurity amount larger than an impurity amount of other third semiconductor layers. | 02-05-2009 |
| 20090114985 | Semiconductor apparatus and method for manufacturing the same - A semiconductor apparatus is disclosed. The semiconductor apparatus includes a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor apparatus further includes multiple double-sided electrode elements each having a pair of electrodes located respectively on the first and second surfaces of the semiconductor substrate. A current flows between the first and second electrode. Each double-sided electrode element has a PN column region located in the semiconductor substrate. The semiconductor apparatus further includes an insulation trench that surrounds each of multiple double-sided electrode elements, and that insulates and separates the multiple double-sided electrode elements from each other. | 05-07-2009 |
| 20090159963 | Semiconductor device including a plurality of cells - A semiconductor device includes an insulated gate transistor and a resistor. The insulated gate transistor includes a plurality of first cells for supplying electric current to a load and a second cell for detecting an electric current that flows in the first cells. A gate terminal of the plurality of first cells is coupled with a gate terminal of the second cell and a source terminal of the plurality of first cells is coupled with a source terminal of the second cell on a lower potential side. The resistor has a first terminal coupled with a drain terminal of the second cell and a second terminal coupled with a drain terminal of the first cells on a higher potential side. A gate voltage of the insulated gate transistor is feedback-controlled based on an electric potential of the resistor. | 06-25-2009 |
| 20090321819 | Semiconductor device having super junction - A semiconductor device includes: a first semiconductor layer; a PN column layer having first and second column layers; and a second semiconductor layer. Each of the first and second column layers includes first and second columns alternately arranged along with a horizontal direction. The first and second column layers respectively have first and second impurity amount differences defined at a predetermined depth by subtracting an impurity amount in the second column from an impurity amount in the first column. The first impurity amount difference is constant and positive. The second impurity amount difference is constant and negative. | 12-31-2009 |
| 20100112765 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes: forming multiple trenches on a semiconductor substrate; forming a second conductive type semiconductor film in each trench to provide a first column with the substrate between two trenches and a second column with the second conductive type semiconductor film in the trench, the first and second columns alternately repeated along with a predetermined direction; thinning a second side of the substrate; and increasing an impurity concentration in a thinned second side so that a first conductive type layer is provided. The impurity concentration of the first conductive type layer is higher than the first column. The first column provides a drift layer so that a vertical type first-conductive-type channel transistor is formed. | 05-06-2010 |
