Patent application number | Description | Published |
20080210911 | VARISTOR ELEMENT - In a varistor element, Ca exists in the grain interior of grains consisting primarily of ZnO in a varistor element body and Ca also exists in a grain boundary. In this crystal structure Ca replaces oxygen defects in the grain interior of grains consisting primarily of ZnO, in the varistor element body to make the ceramic structure denser Such crystal structure also decreases a ratio of an element tending to degrade the stability of the temperature characteristic of the varistor element, e.g., Si as a firing aid, in the grain boundary between grains. As a result, the varistor element has a stable temperature characteristic, which can decrease change in capacitance and tanĪ“ (thermal conversion factor of resistance) against change in temperature. | 09-04-2008 |
20090002048 | Reference voltage generating circuit - Disclosed is a reference voltage generating circuit which includes resistors R | 01-01-2009 |
20090115402 | VOLTAGE DETECTING CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A voltage detecting circuit detects a voltage between first and second wirings, and comprises at least first and second transistors connected in series between the first and second wirings, wherein a first reference voltage is supplied to a gate of the first transistor, a gate and a drain of the second transistor are short-circuited, and a detection signal is output from a connection point between a drain of the first transistor and a source of the second transistor. | 05-07-2009 |
20090116329 | INTERNAL-VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - An internal-voltage generating circuit includes a plurality of generating units connected in cascade, out of the plurality of generating units, a generating unit of relatively lower level is activated by an output of a generating unit of relatively higher level. According to the present invention, because the plural voltage generating units are connected in cascade, the voltage generating unit of lower level is not activated unless the voltage generating unit of higher level is activated. Therefore, at least the voltage generating unit of the second level and the subsequent voltage generating units consume very small power during the standby time. Consequently, total power consumption of the internal-voltage generating circuit can be reduced. | 05-07-2009 |
20090243768 | VARISTOR - A first varistor section includes a first face of an element body, and a third face facing the first face. The first varistor section has a first varistor element body, a first varistor electrode electrically connected to a first external electrode, and a second varistor electrode electrically connected to a second external electrode. A heat radiation section has a first heat radiation portion kept in contact with the third face of the first varistor section and electrically connected to the first and third external electrodes, a second heat radiation portion kept in contact with the third face of the first varistor section and electrically connected to the second and fourth external electrodes, and an insulating layer located between the first heat radiation portion and the second heat radiation portion and electrically insulating the first heat radiation portion and the second heat radiation portion from each other. The first heat radiation portion and the second heat radiation portion contain a metal. | 10-01-2009 |
20090311613 | Mask for multi-column electron beam exposure, and electron beam exposure apparatus and exposure method using the same - A mask for exposure, which is used in a multi-column electron beam exposure apparatus having multiple column cells, includes a stencil pattern group constituted by multiple stencil patterns for each of the multiple column cells. The stencil pattern groups are arranged at intervals corresponding to arrangement intervals of the multiple column cells, and all of the stencil pattern groups are formed on a single mask substrate. The stencil pattern groups include: a first stencil pattern group formed within a deflectable range of an electron beam of each of the multiple column cells; and a second stencil pattern group having two or more of the first stencil patterns. | 12-17-2009 |
20100117782 | VARISTOR - A varistor having a favorable heat-dissipating property is provided. | 05-13-2010 |
20100164607 | SEMICONDUCTOR DEVICE THAT CAN ADJUST SUBSTRATE VOLTAGE - To provide a semiconductor device including: a MOS transistor formed in a semiconductor substrate and have a threshold voltage to be adjusted, a replica transistor of the MOS transistor, a monitoring circuit monitors a gate/source voltage needed when the replica transistor flows a current having a given designed value, a negative voltage pumping circuit generates a substrate voltage of the MOS transistor, based on an output from the monitoring circuit, and a limiting circuit defines the operation of the negative voltage pumping circuit, regardless of a monitoring result of the monitoring circuit, in response to an excess of the substrate voltage with respect to a predetermined value. | 07-01-2010 |
20100244908 | Semiconductor device having a complementary field effect transistor - A semiconductor device prevents the ON current of a complementary field effect transistor from varying with changes in ambient temperature. The semiconductor device includes: a buffer circuit that generates a power-supply voltage of a CMOS; a first replica transistor that is a replica of a p-channel MOS transistor forming the CMOS, and is diode-connected; a second replica transistor that is a replica of an n-channel MOS transistor forming the CMOS, and is diode-connected; and a voltage controller that controls the voltage between the anode and cathode of the replica transistors so that the current value of the current flowing into the replica transistor becomes equal to a given target value. In this semiconductor device, the buffer circuit generates the power-supply voltage, with the target voltage being a voltage that is controlled by the voltage controller. | 09-30-2010 |
20100244936 | Semiconductor device having a complementary field effect transistor - A semiconductor device prevents the OFF current of a complementary field effect transistor from varying with changes in ambient temperature. The semiconductor device includes: a substrate voltage generating circuit that generates the substrate voltage of an n-channel MOS transistor forming a CMOS; a replica transistor that is a replica of the n-channel MOS transistor, and is diode-connected; and a voltage applier that applies a voltage of a predetermined voltage value between the anode and cathode of the replica transistor. In this semiconductor device, the substrate voltage of the replica transistor is the substrate voltage generated by the substrate voltage generating circuit. The substrate voltage generating circuit controls the substrate voltage to be generated so that the current value of the current flowing into the replica transistor becomes equal to a given target value. | 09-30-2010 |
20110221513 | Semiconductor device having boosting circuit - A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit. | 09-15-2011 |
20120112829 | SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING THE SAME - A semiconductor device includes a regulator including an operational amplifier configured of a current mirror and generating the second voltage V | 05-10-2012 |
20130021133 | VARISTOR AND METHOD FOR MANUFACTURING VARISTOR - A varistor is provided with a varistor element body, a plurality of internal electrodes arranged in the varistor element body so as to sandwich a partial region of the varistor element body between them, and a plurality of external electrodes arranged on the surface of the varistor element body and connected to the corresponding internal electrodes. The external electrode has a sintered electrode layer formed by attaching an electroconductive paste containing an alkali metal to the surface of the varistor element body and sintering it. The varistor element body has a high-resistance region formed by diffusing the alkali metal in the electroconductive paste into the varistor element body from an interface between the surface of the varistor element body and the sintered electrode layer. | 01-24-2013 |
20130070553 | SEMICONDUCTOR DEVICE HAVING CHARGE PUMP CIRCUIT AND INFORMATION PROCESSING APPARATUS INCLUDING THE SAME - Disclosed herein is a device that includes a capacitor, a pumping circuit supplying a pumping signal changed between first and second potential to a first electrode of the capacitor, and an output circuit precharging a second electrode of the capacitor to a third potential different from the first and second potentials. The second electrode of the capacitor is thereby changed from the third potential to a fourth potential higher than the third potential when the pumping signal is changed from the first potential to the second potential. | 03-21-2013 |
20130194035 | SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING THE SAME - A semiconductor device includes a regulator including an operational amplifier configured of a current mirror and generating the second voltage V | 08-01-2013 |
20130307622 | DIFFERENTIAL AMPLIFIER CIRCUIT HAVING PLURAL CURRENT MIRROR CIRCUITS - Disclosed herein is a differential amplifier circuit that includes: first and second transistors coupled to form a differential circuit; a first current mirror circuit generating first and second currents in response to a third current flowing through the first transistor; and a second current mirror circuit generating a fourth current in response to a fifth input current. A sum of the second and fourth currents flowing through the second transistor. | 11-21-2013 |
20130324881 | EYEWEAR - A problem related to a known eyewear-type electro-oculogram measuring apparatus which detects the eye potential using a pair of electrodes positioned outside both the eyes of a user and a pair of electrodes respectively positioned above and below one eye is that the two pairs of electrodes have had an impact on the skins of users, and discomfort on them. Besides, the electrodes are not excellent in design. The present invention provides eyewear including: a frame; a pair of nose pads; and a first electrode and a second electrode respectively provided on the surface of the pair of nose pads, the first electrode and the second electrode detecting eye potential | 12-05-2013 |
20140021994 | SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING THE SAME - A semiconductor device includes a regulator including an operational amplifier configured of a current mirror and generating the second voltage V | 01-23-2014 |
20140111271 | SEMICONDUCTOR DEVICE HAVING BOOSTING CIRCUIT - A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit. | 04-24-2014 |
20140118744 | TRANSMITTED LIGHT OBSERVATION APPARATUS - In order to allow for easy judgment of performance of optical material having a prescribed function, provided is a transmitted light observation apparatus comprising a light emitting section that generates light including light of a prescribed wavelength; a holding section that holds a first test material and a second test material arranged respectively in optical paths of the light generated by the light emitting section; and a reflecting portion that reflects at least a portion of the light transmitted respectively through the first test material and the second test material. Transmittance of the first test material for the light of the prescribed wavelength is different from transmittance of the second test material for the light of the prescribed wavelength. The light of the prescribed wavelength has a wavelength from 380 nm to 500 nm. | 05-01-2014 |
20140300408 | SEMICONDUCTOR DEVICE HAVING A COMPLEMENTARY FIELD EFFECT TRANSISTOR - A method for controlling power supply current in a CMOS circuit, the method including applying a first predetermined voltage to a diode connected n-channel replica transistor, the n-channel replica transistor operating in weak inversion, applying a first substrate voltage to the substrate of the n-channel replica transistor so that the current flowing in the n-channel replica transistor equals a first predetermined target current, and applying the first substrate voltage to substrates of n-channel transistors in the CMOS circuit | 10-09-2014 |
20150077696 | EYEWEAR - Eyewear includes: a liquid retainer including a cavity to retain a liquid; and a frame in which a housing is formed to house at least a part of the liquid retainer, where the liquid retainer is supported to the frame via a hinge, to be movable between a position at which the liquid retainer is housed in the housing and a position at which the liquid retainer is not housed in the housing, and the liquid retainer includes a gaseous body transmission member transmitting a gaseous body from the cavity towards a face when the liquid retainer is housed in the housing and the frame is worn on the face. | 03-19-2015 |