| Patent application number | Description | Published |
|---|
| 20090071402 | Metal film vapor phase deposition method and vapor phase deposition apparatus - A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active Cu | 03-19-2009 |
| 20090133623 | METAL FILM PRODUCTION APPARATUS AND METAL FILM PRODUCTION METHOD - A metal film production apparatus supplies a source gas containing a halogen such as a chlorine, to the interior of a chamber such that the source gas is intermittently supplied, to form a Cu component of a precursor into a film on a substrate, while suppressing a relative increase in etching particles. Thus, the source gas is supplied in the full presence of plasma particles contributing a film formation. Moreover, the source gas is supplied in a state in which a Cu film formed is not etched with the etching particles. Consequently, the Cu film is reliably increased with respect to the film formation time to increase the film formation speed. The temperature of the substrate is less than that of the etched member. | 05-28-2009 |
| 20090233442 | METHOD AND APPARATUS FOR PRODUCTION OF METAL FILM OR THE LIKE - In a metal film production apparatus, a copper plate member is etched with a Cl | 09-17-2009 |
| 20090311866 | METHOD AND APPARATUS FOR PRODUCTION OF METAL FILM OR THE LIKE - In a metal film production apparatus, a copper plate member is etched with a Cl | 12-17-2009 |
| 20090324848 | METAL FILM PRODUCTION APPARATUS - A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl | 12-31-2009 |
| 20100040802 | METHOD AND APPARATUS FOR PRODUCTION OF METAL FILM OR THE LIKE - In a metal film production apparatus, a copper plate member is etched with a Cl | 02-18-2010 |
| 20100047471 | BARRIER METAL FILM PRODUCTION APPARATUS, BARRIER METAL FILM PRODUCTION METHOD, METAL FILM PRODUCTION METHOD, AND METAL FILM PRODUCTION APPARATUS | 02-25-2010 |
| 20100062181 | METAL FILM PRODUCTION APPARATUS AND METAL FILM PRODUCTION METHOD - A metal film production method supplies a source gas containing a halogen, such as a chlorine, to the interior of a chamber such that the source gas is intermittently supplied, to form a Cu component of a precursor into a film on a substrate, while suppressing a relative increase in etching particles. Thus, the source gas is supplied in the full presence of plasma particles contributing to film formation. Moreover, the source gas is supplied in a state in which a Cu film formed is not etched with the etching particles. Consequently, the Cu film is reliably increased with respect to the film formation time to increase the film formation speed. The temperature of the substrate is less than that of the etched member. | 03-11-2010 |
| 20100124825 | BARRIER METAL FILM PRODUCTION APPARATUS, BARRIER METAL FILM PRODUCTION METHOD, METAL FILM PRODUCTION METHOD, AND METAL FILM PRODUCTION APPARATUS | 05-20-2010 |
