Patent application number | Description | Published |
20100175613 | Base material for forming single crystal diamond film and method for producing single crystal diamond using the same - The present invention is a base material for forming a single crystal diamond comprising, at least, a seed base material of a single crystal and a thin film heteroepitaxially grown on the seed base material, wherein the seed base material is a single crystal diamond and the thin film is Iridium film or Rhodium film. As a result, there is provided a base material for forming a single crystal diamond that enables a single crystal diamond having a high crystallinity to be heteroepitaxially grown thereon and that can be reused repeatedly and a method for producing a single crystal diamond that enables a single crystal diamond having a high crystallinity and a large area to be produced at low cost. | 07-15-2010 |
20100178234 | Multilayer substrate and method for producing the same, diamond film and method for producing the same - The present invention is a multilayer substrate comprising, at least, a single crystal substrate, a diamond film vapor-deposited on the single crystal substrate, wherein the single crystal substrate is a single crystal Ir or a single crystal Rh and a method for producing a multilayer substrate comprising, at least, a step of vapor-depositing a diamond film on a single crystal substrate, wherein a single crystal Ir or a single crystal Rh is used as the single crystal substrate. As a result, there is provided a multilayer substrate having a high quality single crystal diamond film with a large area and with a high crystallinity as a continuous film in which the diamond and the single crystal substrate are not broken and a method for producing the multilayer substrate at low cost. | 07-15-2010 |
20100178730 | Direct-current plasma CVD apparatus and method for producing diamond using the same - The present invention is a direct-current plasma CVD apparatus comprising at least a fixed electrode and a substrate stage having a top flat face and combined with an electrode for placing a substrate, in which the substrate stage top face is not located on a line extended from a center of the fixed electrode in vertical direction, and an angle formed between a line of a length R connecting a center of the substrate stage top face with the center of the fixed electrode and the line extended in vertical direction from the center of the fixed electrode is 90° or less. As a result, there is provided a direct-current plasma CVD apparatus in which a high quality vapor phase growth film, such as diamond of a large area having few defects caused by the fall of the substances produced at the fixed electrode, can be obtained. | 07-15-2010 |
20100294196 | Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrate - The present invention is a substrate for growing a single crystal diamond layer including: at least, a base material made of a single crystal diamond, and an iridium film or a rhodium film heteroepitaxially grown on a side of the base material where the single crystal diamond layer is to be grown; wherein a peripheral end portion of a surface of the base material on the side where the single crystal diamond layer is to be grown is chamfered with a curvature radius (r), the curvature radius satisfying (r)≧50 μm. As a result, there is provided a substrate for growing a single crystal diamond layer and a method for producing a single crystal diamond substrate, the substrate and the method in which a single crystal diamond having uniform and high crystallinity can be reproducibly produced at low cost. | 11-25-2010 |
20110081531 | BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE - The present invention is a base material for growing a single crystal diamond comprising a single crystal silicon substrate, a MgO film heteroepitaxially grown on a side of the single crystal silicon substrate where the single crystal diamond is to be grown, and an iridium film or a rhodium film heteroepitaxially grown on the MgO film. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost. | 04-07-2011 |
20110084285 | BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE - The present invention is a base material for growing a single crystal diamond comprising: at least a single crystal SiC substrate; and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost. | 04-14-2011 |
20110315074 | SINGLE-CRYSTAL DIAMOND GROWTH BASE MATERIAL AND METHOD FOR MANUFACTURING SINGLE-CRYSTAL DIAMOND SUBSTRATE - An object is to provide a single-crystal diamond growth base material and a method for manufacturing a single-crystal diamond substrate that enable growing single-crystal diamond having a large area and excellent crystallinity and inexpensively manufacturing a high-quality single-crystal diamond substrate. | 12-29-2011 |
20120225307 | MULTILAYER SUBSTRATE AND METHOD FOR PRODUCING THE SAME, DIAMOND FILM AND METHOD FOR PRODUCING THE SAME - The present invention is a multilayer substrate comprising, at least, a single crystal substrate, a diamond film vapor-deposited on the single crystal substrate, wherein the single crystal substrate is a single crystal Ir or a single crystal Rh and a method for producing a multilayer substrate comprising, at least, a step of vapor-depositing a diamond film on a single crystal substrate, wherein a single crystal Ir or a single crystal Rh is used as the single crystal substrate. As a result, there is provided a multilayer substrate having a high quality single crystal diamond film with a large area and with a high crystallinity as a continuous film in which the diamond and the single crystal substrate are not broken and a method for producing the multilayer substrate at low cost. | 09-06-2012 |
20120225308 | MULTILAYER SUBSTRATE AND METHOD FOR PRODUCING THE SAME, DIAMOND FILM AND METHOD FOR PRODUCING THE SAME - The present invention is a multilayer substrate comprising, at least, a single crystal substrate, a diamond film vapor-deposited on the single crystal substrate, wherein the single crystal substrate is a single crystal Ir or a single crystal Rh and a method for producing a multilayer substrate comprising, at least, a step of vapor-depositing a diamond film on a single crystal substrate, wherein a single crystal Ir or a single crystal Rh is used as the single crystal substrate. As a result, there is provided a multilayer substrate having a high quality single crystal diamond film with a large area and with a high crystallinity as a continuous film in which the diamond and the single crystal substrate are not broken and a method for producing the multilayer substrate at low cost. | 09-06-2012 |
20130220214 | BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE - The present invention is a base material for growing a single crystal diamond comprising a single crystal silicon substrate, a MgO film heteroepitaxially grown on a side of the single crystal silicon substrate where the single crystal diamond is to be grown, and an iridium film or a rhodium film heteroepitaxially grown on the MgO film. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost. | 08-29-2013 |
20130239880 | BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE - A base material for growing a single crystal diamond that includes at least a single crystal SiC substrate, and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost. | 09-19-2013 |
Patent application number | Description | Published |
20080297950 | MAGNETIC SIGNAL REPRODUCTION SYSTEM AND MAGNETIC SIGNAL REPRODUCTION METHOD - The magnetic signal reproduction system comprises a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support; and a reproduction head, wherein a number of protrusions equal to or greater than 10 nm in height on the magnetic layer surface, as measured by an atomic force microscope, ranges from 50 to 2500/10,000 μm | 12-04-2008 |
20090027812 | MAGNETIC SIGNAL REPRODUCTION SYSTEM AND MAGNETIC SIGNAL REPRODUCTION METHOD - The magnetic signal reproduction system comprises a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support and a reproduction head, wherein a number of protrusions equal to or greater than 10 nm in height on the magnetic layer surface, as measured by an atomic force microscope, ranges from 50 to 2500/10,000 μm | 01-29-2009 |
20090046396 | Magnetic Recording Medium, Linear Magnetic Recording and Reproduction System and Magnetic Recording and Reproduction Method - The present invention relates to a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nomnagnetic support. A product, Mrδ, of a residual magnetization Mr of the magnetic layer and a thickness δ of the magnetic layer is equal to or greater than 2 mT•μm and equal to or less than 12 mT•μm, a squareness in a perpendicular direction is equal to or greater than 0.4 and equal to or less than 0.7, and a squareness in a longitudinal direction is equal to or greater than 0.3 but less than 0.6. | 02-19-2009 |
20090098414 | METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING MEDIUM MANUFACTURED BY THE SAME - The present invention relates to a method of manufacturing a magnetic recording medium wherein the magnetic layer coating liquid comprising a ferromagnetic powder having an average particle size of 10 to 40 nm and a moisture content of 0.3 to 3.0 weight percent; a binder (a) comprising 0.2 to 0.7 meq/g of at least one polar group selected from the group consisting of —SO | 04-16-2009 |
20120134053 | MAGNETIC SIGNAL REPRODUCTION SYSTEM AND MAGNETIC SIGNAL REPRODUCTION METHOD - The magnetic signal reproduction system comprises a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support; and a reproduction head, wherein a number of protrusions equal to or greater than 10 nm in height on the magnetic layer surface, as measured by an atomic force microscope, ranges from 50 to 2500/10,000 μm | 05-31-2012 |
Patent application number | Description | Published |
20080282779 | FUEL PROPERTY DETECTOR - A fuel property sensor is provided with three bypass passages and a measure passage. The measure passage is located inside of a closed loop which is comprised of common tangential lines of adjacent bypass passages and a part of profile line of each bypass passage in a cross section perpendicular to the measure passage. Even if the fuel property sensor is rotated around the axis of a fuel pipe in assembling the fuel property sensor to the fuel pipe, at least one of two bypass passages is always located above the measure passage in a vertical direction. Hence, bubbles included in the fuel are restricted from flowing into the measure passage. The fuel property sensor can detect the concentration of ethanol contained in the fuel with high accuracy. | 11-20-2008 |
20130157807 | VEHICLE DRIVING SYSTEM CONTROL APPARATUS - A vehicle driving system control apparatus includes a power transmission device and a power transmission control section. The power transmission device includes an engine input shaft, a motor input shaft, an output shaft, an engine-side gear mechanism transmitting a power of the engine input shaft to the output shaft, a motor-side gear mechanism transmitting a power of the motor input shaft to the output shaft, a first clutch enables and disables a power transmission between the engine input shaft and the motor input shaft, a second clutch enables and disables a power transmission between the motor-side gear mechanism and the output shaft, and a third clutch enables and disables a power transmission between the engine-side gear mechanism and the output shaft. The power transmission control section determines statuses of the clutches and required torques of motor generators in correspondence with a rotation speed of an axle. | 06-20-2013 |
20130166127 | VEHICLE DRIVING SYSTEM CONTROL APPARATUS - A vehicle driving system control apparatus includes a regeneration control section that performs a regeneration control when a vehicle is decelerated. In the regeneration control, the regeneration control section drives at least one of a first motor generator and a second motor generator with a power of an axle so as to charge a battery with an electric power generated with the at least one of the first motor generator and the second motor generator. The regeneration control section selects a mode of the regeneration control by controlling engagement and disengagement statuses of first to third clutches in correspondence with at least one of a target energy regeneration amount, a required brake torque and a vehicle speed. | 06-27-2013 |
Patent application number | Description | Published |
20120069487 | STACKED STRUCTURE AND METHOD OF MANUFACTURING THE SAME - [Problem to be Solved] | 03-22-2012 |
20120085573 | STACKED STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A problem to be solved is to suppress deterioration of insulating properties in a stacked structure with a dielectric film formed by powder spraying coating process, and in a method of manufacturing the stacked structure. In a stacked structure according to the present invention, a dielectric layer | 04-12-2012 |
20130120902 | SUBSTRATE-INCORPORATED CAPACITOR, CAPACITOR-INCORPORATING SUBSTRATE PROVIDED WITH THE SAME, AND METHOD FOR MANUFACTURING SUBSTRATE-INCORPORATED CAPACITOR - A substrate-incorporated capacitor includes a first electrode extending in a predetermined direction, a dielectric layer arranged on the first electrode, a second electrode arranged on the dielectric layer and facing the first electrode through the dielectric layer, wherein the second electrode includes an end projecting from the dielectric layer in the predetermined direction, and an electrode layer spaced apart from the first electrode in the predetermined direction. The end of the second electrode is connected to the electrode layer in the predetermined direction. The electrode layer includes a surface that is flush with a surface of the first electrode. | 05-16-2013 |
20130120904 | SUBSTRATE-INCORPORATED CAPACITOR, CAPACITOR-INCORPORATING SUBSTRATE PROVIDED WITH THE SAME, AND METHOD FOR MANUFACTURING SUBSTRATE-INCORPORATED CAPACITOR - A substrate-incorporated capacitor includes a first electrode extending in a predetermined direction, a dielectric layer arranged on part of the first electrode, a second electrode arranged on the dielectric layer and facing the first electrode through the dielectric layer, and an electrode layer arranged on the first electrode surrounding the dielectric layer and connected to the first electrode. Part of the electrode layer is arranged on an end of the dielectric layer and is spaced apart from the second electrode in the predetermined direction, and the part of the electrode layer faces the first electrode through the dielectric layer. | 05-16-2013 |