| Patent application number | Description | Published |
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| 20100175613 | Base material for forming single crystal diamond film and method for producing single crystal diamond using the same - The present invention is a base material for forming a single crystal diamond comprising, at least, a seed base material of a single crystal and a thin film heteroepitaxially grown on the seed base material, wherein the seed base material is a single crystal diamond and the thin film is Iridium film or Rhodium film. As a result, there is provided a base material for forming a single crystal diamond that enables a single crystal diamond having a high crystallinity to be heteroepitaxially grown thereon and that can be reused repeatedly and a method for producing a single crystal diamond that enables a single crystal diamond having a high crystallinity and a large area to be produced at low cost. | 07-15-2010 |
| 20100178234 | Multilayer substrate and method for producing the same, diamond film and method for producing the same - The present invention is a multilayer substrate comprising, at least, a single crystal substrate, a diamond film vapor-deposited on the single crystal substrate, wherein the single crystal substrate is a single crystal Ir or a single crystal Rh and a method for producing a multilayer substrate comprising, at least, a step of vapor-depositing a diamond film on a single crystal substrate, wherein a single crystal Ir or a single crystal Rh is used as the single crystal substrate. As a result, there is provided a multilayer substrate having a high quality single crystal diamond film with a large area and with a high crystallinity as a continuous film in which the diamond and the single crystal substrate are not broken and a method for producing the multilayer substrate at low cost. | 07-15-2010 |
| 20100178730 | Direct-current plasma CVD apparatus and method for producing diamond using the same - The present invention is a direct-current plasma CVD apparatus comprising at least a fixed electrode and a substrate stage having a top flat face and combined with an electrode for placing a substrate, in which the substrate stage top face is not located on a line extended from a center of the fixed electrode in vertical direction, and an angle formed between a line of a length R connecting a center of the substrate stage top face with the center of the fixed electrode and the line extended in vertical direction from the center of the fixed electrode is 90° or less. As a result, there is provided a direct-current plasma CVD apparatus in which a high quality vapor phase growth film, such as diamond of a large area having few defects caused by the fall of the substances produced at the fixed electrode, can be obtained. | 07-15-2010 |
| 20100294196 | Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrate - The present invention is a substrate for growing a single crystal diamond layer including: at least, a base material made of a single crystal diamond, and an iridium film or a rhodium film heteroepitaxially grown on a side of the base material where the single crystal diamond layer is to be grown; wherein a peripheral end portion of a surface of the base material on the side where the single crystal diamond layer is to be grown is chamfered with a curvature radius (r), the curvature radius satisfying (r)≧50 μm. As a result, there is provided a substrate for growing a single crystal diamond layer and a method for producing a single crystal diamond substrate, the substrate and the method in which a single crystal diamond having uniform and high crystallinity can be reproducibly produced at low cost. | 11-25-2010 |
| 20110081531 | BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE - The present invention is a base material for growing a single crystal diamond comprising a single crystal silicon substrate, a MgO film heteroepitaxially grown on a side of the single crystal silicon substrate where the single crystal diamond is to be grown, and an iridium film or a rhodium film heteroepitaxially grown on the MgO film. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost. | 04-07-2011 |
| 20110084285 | BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE - The present invention is a base material for growing a single crystal diamond comprising: at least a single crystal SiC substrate; and an iridium film or a rhodium film heteroepitaxially grown on a side of the single crystal SiC substrate where the single crystal diamond is to be grown. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost. | 04-14-2011 |
| 20110315074 | SINGLE-CRYSTAL DIAMOND GROWTH BASE MATERIAL AND METHOD FOR MANUFACTURING SINGLE-CRYSTAL DIAMOND SUBSTRATE - An object is to provide a single-crystal diamond growth base material and a method for manufacturing a single-crystal diamond substrate that enable growing single-crystal diamond having a large area and excellent crystallinity and inexpensively manufacturing a high-quality single-crystal diamond substrate. | 12-29-2011 |
| Patent application number | Description | Published |
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| 20080297950 | MAGNETIC SIGNAL REPRODUCTION SYSTEM AND MAGNETIC SIGNAL REPRODUCTION METHOD - The magnetic signal reproduction system comprises a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support; and a reproduction head, wherein a number of protrusions equal to or greater than 10 nm in height on the magnetic layer surface, as measured by an atomic force microscope, ranges from 50 to 2500/10,000 μm | 12-04-2008 |
| 20090027812 | MAGNETIC SIGNAL REPRODUCTION SYSTEM AND MAGNETIC SIGNAL REPRODUCTION METHOD - The magnetic signal reproduction system comprises a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support and a reproduction head, wherein a number of protrusions equal to or greater than 10 nm in height on the magnetic layer surface, as measured by an atomic force microscope, ranges from 50 to 2500/10,000 μm | 01-29-2009 |
| 20090046396 | Magnetic Recording Medium, Linear Magnetic Recording and Reproduction System and Magnetic Recording and Reproduction Method - The present invention relates to a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nomnagnetic support. A product, Mrδ, of a residual magnetization Mr of the magnetic layer and a thickness δ of the magnetic layer is equal to or greater than 2 mT•μm and equal to or less than 12 mT•μm, a squareness in a perpendicular direction is equal to or greater than 0.4 and equal to or less than 0.7, and a squareness in a longitudinal direction is equal to or greater than 0.3 but less than 0.6. | 02-19-2009 |
| 20090098414 | METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING MEDIUM MANUFACTURED BY THE SAME - The present invention relates to a method of manufacturing a magnetic recording medium wherein the magnetic layer coating liquid comprising a ferromagnetic powder having an average particle size of 10 to 40 nm and a moisture content of 0.3 to 3.0 weight percent; a binder (a) comprising 0.2 to 0.7 meq/g of at least one polar group selected from the group consisting of —SO | 04-16-2009 |
