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| 20090059985 | EL SEMICONDUCTOR DEVICE - An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppress the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity. | 03-05-2009 |
| 20090141763 | SEMICONDUCTOR LASER - There is disclosed a Be-containing II-VI group semiconductor laser that has a laminated structure formed on an InP substrate to continuously emit at room temperature without crystal degradation. A basic structure of the semiconductor laser is formed over the InP substrate by use of a lattice-matched II-VI group semiconductor including Be. An active layer and cladding layers are formed to be a double heterostructure with a type I band lineup, in order to increase the efficiency for injecting carriers into the active layer. The active layer and the cladding layers are also formed to enhance the light confinement to the active layer, in which the Mg composition of the p-type cladding layer is set to Mg<0.2. | 06-04-2009 |
| 20110096383 | LIGHT BEAM SCANNING IMAGE PROJECTION APPARATUS - The object of the invention included in the present application is to automatically prevent the deterioration of the image even when the image quality of the projected image is deteriorated due to the replacement of the light source or the like. The following light beam scanning image projection apparatus is one means for achieving the object. In the light beam scanning image projection apparatus including a plurality of light sources which emit the light beams of respectively different wavelengths, a driving section which modulates the intensity of each light beam in accordance with the image signal, the light axis alignment means which aligns the light axes of each light beam, and scanning means which scans the light beams, the light axis alignment means includes: a plurality of optical elements; and an adjusting section which adjusts at least one of a position and a gradient of at least one of the optical elements, and the light beam scanning image projection apparatus further includes: detecting means which detects a shift between a spot center of each light beam and a center reference point; and position correction means which controls the adjusting section based on a detection result in the detecting means to adjust at least one of the position and the gradient of at least one of the optical elements of the light axis alignment means, thereby aligning the light axes of each light beam. | 04-28-2011 |
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| 20080199983 | METHOD FOR MANUFACTURING A SEMICONDUCTOR LASER - A method of manufacturing semiconductor laser device including a GaN wafer includes forming a semiconductor layer on the GaN wafer and on which ridge portions are formed. Grooves are formed in the semiconductor layer such that each groove is disposed in line with the scribe marks, between each of the ridge portions and an upstream scribe mark. The grooves are curved and convex outwardly towards a downstream side, and each groove has an apex on a cleavage line. The side extending from the apex preferably does not form an angle of 60 degrees with respect to a cleavage direction or the cleavage line. | 08-21-2008 |
| 20080247434 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device capable of increasing the carrier concentration of a p-type cladding layer and improving light-emitting efficiency is provided. A semiconductor light-emitting device is made of a Group II-VI compound semiconductor, and the semiconductor light-emitting device includes an active layer between an n-type cladding layer and a p-type cladding layer, in which the active layer has a Type II superlattice structure, and the junctions between the active layer and the n-type cladding layer and between the active layer and the p-type cladding layer each have a Type I structure, and the p-type cladding layer includes tellurium (Te) as a Group VI element. | 10-09-2008 |
| 20080298415 | SEMICONDUCTOR DEVICE - A semiconductor device having high reliability, a long lifetime and superior light emitting characteristics by applying a novel material to a p-type cladding layer is provided. A semiconductor device includes a p-type semiconductor layer on an InP substrate, in which the p-type semiconductor layer has a laminate structure formed by alternately laminating a first semiconductor layer mainly including Be | 12-04-2008 |
| 20090111203 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A laminated structure having light-emitting units is formed on a single-crystal wafer. Electrode patterns are formed on the single-crystal wafer opposite the light-emitting units. Dummy patterns are formed on the single-crystal wafer at a location spaced apart from a location opposite the light-emitting units, and offset from a desired cleavage line intersecting the light-emitting units. A scratch is formed on the desired cleavage line. The wafer is cleaved, originating on the scratch, along the cleavage line orientation, in the direction from the dummy pattern, toward the light-emitting units. | 04-30-2009 |
| 20090309978 | Receiver, situation-of-installation notification method, and transmitting and receiving system - A receiver includes: a band detection unit that detects a frequency band within which the receiver can be connected to a transmitter by radio; a quality detection unit that detects the transmission quality level of video data, which is transmitted from the transmitter, using the frequency band detected by the band detection unit; and a notification unit that notifies an area in which the frequency band within which the receiver can be connected to the transmitter by radio is detected and the transmission quality level is detected to be higher than a predetermined threshold. | 12-17-2009 |
| 20100040103 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device including: a semiconductor layer including an n-type first cladding layer, an n-type second cladding layer, an active layer, a p-type first cladding layer, and a p-type second cladding layer in this order on an InP substrate. The n-type first cladding layer and the n-type second cladding layer satisfy formulas (1) to (4) below, or the p-type first cladding layer and the p-type second cladding layer satisfy formulas (5) to (8) below. | 02-18-2010 |
| 20100248448 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - A method of manufacturing semiconductor devices by cleaving a semiconductor wafer along a crystal orientation of the semiconductor wafer includes forming a semiconductor layer on the semiconductor wafer, forming an insulating film on the semiconductor layer such that the insulating film includes an insulating film thinned region extending parallel to the crystal orientation and that is thinner than other regions of the insulating film, forming an electrode on the insulating film and that crosses the insulating film thinned region, forming a cut in the insulating film thinned region, the cut serving as a starting point for cleaving, and cleaving the semiconductor wafer such that cleaving starts at the cut and propagates along the insulating film thinned region. | 09-30-2010 |
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| 20090135548 | Positive Electrode for Electric Double Layer Capacitors, and Electric Double Layer Capacitors - The present invention provides a positive electrode for electric double layer capacitors which can improve basic characteristics, such as energy density, of electric double layer capacitors and also can improve electric double layer capacitors in useful life and stability under high temperatures. Provided is a positive electrode for electric double layer capacitors comprising as electrode active materials a carbonaceous material having a ratio of rhombohedral crystal structure to hexagonal crystal structure in crystal structure of carbon within the range of not less than 20%. | 05-28-2009 |
| 20090294299 | SPENT FUEL REPROCESSING METHOD - A spent fuel reprocessing method has a dissolution step of dissolving the spent fuel in nitric acid solution, an electrolysis/valence adjustment step of reducing Pu to trivalent, maintaining the pentavalent of Np, a uranium extraction step of collecting UO | 12-03-2009 |
| 20100008695 | IMAGE FORMING APPARATUS - An image forming apparatus having a liquid-cooled cooling system prevents problems caused by a potential leakage of coolant used in the liquid-cooled cooling system. The liquid-cooled cooling system cools a heat-generating image forming portion using the coolant, which is circulated by a pump through a circulating path. The cooling system includes a heat-receiving member disposed in thermal contact with the image forming portion to absorb heat generated by the image forming portion. The heat-receiving member is connected with the circulating path via a joint. The joint is disposed within an enclosed space between the image forming portion and an electrical component drive portion for driving or controlling the image forming portion, so that the image forming portion and the electrical component drive portion can be protected from the coolant in the event of coolant leakage via the joint. | 01-14-2010 |
