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Hitoshi Kubota

Hitoshi Kubota, Osaka-Shi JP

Patent application numberDescriptionPublished
20090023729Trisubstituted amine compound - The present invention relates to a compound of the general formula (1):01-22-2009
20090029994Trisubstituted amine compound - The present invention relates to a compound of the general formula (1):01-29-2009
20090292125 PROCESS FOR PREPARING TETRAHYDROQUINOLINE DERIVATIVES - The present invention is to provide a process for preparing optically active tetrahydroquinoline derivatives which can be used for the treatment and/or prevention of diseases such as arteriosclerotic diseases, dyslipidemia and the like, and a process for preparing synthetic intermediates thereof.11-26-2009
20110039828TETRAHYDROQUINOLINE DERIVATIVES AND A PROCESS FOR PREPARING THE SAME - A novel compound of the formula (I):02-17-2011
20110092506TRISUBSTITUTED AMINE COMPOUND - The present invention relates to a compound of the general formula (1):04-21-2011

Patent applications by Hitoshi Kubota, Osaka-Shi JP

Hitoshi Kubota, Tsukuba-Shi JP

Patent application numberDescriptionPublished
20090261436NEGATIVE-RESISTANCE DEVICE WITH THE USE OF MAGNETO-RESISTIVE EFFECT - A magneto-resistive device has a magnetic free layer (10-22-2009
20090322419AMPLIFYING APPARATUS USING MAGNETO-RESISTIVE DEVICE - An amplifying apparatus includes a magneto-resistive device which has a magnetic free layer, a magnetic pinned layer having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer provided in between the magnetic free layer and the magnetic pinned layer. The amplifying apparatus has a first electrode layer provided in a magnetic free layer side of the magneto-resistive device, and a second electrode layer provided in a magnetic pinned layer side of the magneto-resistive device. The amplifying apparatus further includes a direct-current bias power-source for applying a direct-current bias to the magneto-resistive device, and a load resistor. The amplifying apparatus continually causes the change of a magnetization direction of the magnetic free layer to make the magneto-resistive device show negative resistance, and thereby amplifies an input signal.12-31-2009
20110073970MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.03-31-2011

Hitoshi Kubota, Ibaraki JP

Patent application numberDescriptionPublished
20100055502TUNNELING MAGNETORESISTIVE DEVICE - A tunneling magnetoresistive device includes: a fixed layer that includes a ferromagnetic material; a tunneling insulating film that is provided in contact with the fixed layer; and a free layer that includes a first ferromagnetic film provided in contact with the tunneling insulating film, a second ferromagnetic film whose magnetization is coupled parallel to the magnetization of the first ferromagnetic film, and a conductive film interposed between the first ferromagnetic film and the second ferromagnetic film.03-04-2010
20100131578RANDOM NUMBER GENERATING DEVICE - A random number generating device is constructed such that it has improved random number generation rate and allows for construction of compact circuit with ease.05-27-2010

Hitoshi Kubota, Fujisawa-Shi JP

Patent application numberDescriptionPublished
20080302964METHOD AND APPARATUS FOR INSPECTING INTEGRATED CIRCUIT PATTERN - A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.12-11-2008

Patent applications by Hitoshi Kubota, Fujisawa-Shi JP