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Hitoshi Kato

Hitoshi Kato, Iwate JP

Patent application numberDescriptionPublished
20080274605METHOD OF MANUFACTURING SILICON NITRIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A method of manufacturing a silicon nitride film that forms a silicon nitride film on a surface of a substrate comprises sequentially repeating first through third steps. The first step includes feeding a first gas containing silicon and nitrogen to the surface of the substrate. The second step includes feeding a second gas containing nitrogen to the surface of the substrate. The third step includes feeding a third gas containing hydrogen to the surface of the substrate.11-06-2008
20110039026FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A silicon oxide film is deposited by rotating a rotation table on which a wafer W is placed to allow BTBAS gas to be adsorbed on an upper surface of the wafer W and supply a O02-17-2011
20110104395FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND STORAGE MEDIUM - In a film deposition apparatus where bis (tertiary-butylamino) silane (BTBAS) gas is adsorbed on a wafer and then O05-05-2011
20110139074FILM DEPOSITION APPARATUS - A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.06-16-2011
20110155056FILM DEPOSITION APPARATUS - A film deposition apparatus has a vacuum chamber in which a turntable placing plural substrates is rotated, the plural substrates come into contact with plural reaction gases supplied to plural process areas and thin films are deposited on surfaces of the plural substrates, and has plural reaction gas supplying portions for supplying the plural processing gases, a separation gas supplying portion for supplying a separation gas and an evacuation mechanism for ejecting the plural processing gases and the separation gas, wherein the plural process areas includes a first process area for causing a first reaction gas to adsorb on the surfaces of the plural substrates, and a second process area, having an area larger than the first process area, for causing the first reaction gas having adsorbed the surfaces of the plural substrates and a second reaction gas to react, and depositing the films on the surfaces of the plural substrates.06-30-2011
20110155057PLASMA PROCESS APPARATUS - A plasma process apparatus for processing a substrate by using plasma including a vacuum chamber in which the processing of the substrate is performed, a turntable inside the vacuum chamber, the turntable having at least one substrate receiving area, a rotation mechanism rotating the turntable, a gas supplying part supplying plasma generation gas to the substrate receiving area, a main plasma generating part ionizing the plasma generation gas, being provided in a position opposite to a passing area of the substrate receiving area, and extending in a rod-like manner from a center portion of the turntable to an outer circumferential portion of the turntable, an auxiliary plasma generating part compensating for insufficient plasma of the main plasma generating part, the auxiliary plasma generating part being separated from the main plasma generating part in a circumferential direction of the vacuum chamber, and an evacuating part evacuating the vacuum chamber.06-30-2011
20110155062FILM DEPOSITION APPARATUS - A film deposition apparatus includes a turntable including a substrate placement region at its surface; first and second reaction gas supply parts disposed in first and second supply regions in a chamber and supplying first and second reaction gases onto the surface, respectively; a separation region disposed between the first and second supply regions, the separation region including a separation gas supply part ejecting a separation gas separating the first and second reaction gases and a ceiling surface forming a separation space to supply the separation gas to the first and second supply regions; and first and second evacuation ports provided for the first and second supply regions. At least one of the first and second evacuation ports is disposed so as to guide the separation gas, supplied to the corresponding supply region, toward and along a direction in which the corresponding reaction gas supply part extends.06-30-2011
20110159187FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD - A film deposition apparatus includes a separation member that extends to cover a rotation center of the turntable and two different points on a circumference of the turntable above the turntable, thereby separating the inside of the chamber into a first area and a second area; a first reaction gas supplying portion that supplies a first reaction gas toward the turntable in the first area; a second reaction gas supplying portion that supplies a second reaction gas toward the turntable in the second area; a first evacuation port that evacuates the first reaction gas and the first separation gas that converges with the first reaction gas; and a second evacuation port that evacuates the second reaction gas and the first separation gas that converges with the second reaction gas.06-30-2011
20110159188FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.06-30-2011

Patent applications by Hitoshi Kato, Iwate JP

Hitoshi Kato, Wako-Shi JP

Patent application numberDescriptionPublished
20100244489REINFORCING ELEMENT STRUCTURE - A reinforcing element structure placed between left and right seats. A reinforcing element comprises a pair of left and right side walls positioned so as to be disposed opposite from interior faces of a pair of left and right seats, and a reinforcing member for coupling the pair of left and right side walls. The pair of left and right side walls and the reinforcing member are jointly fastened to a tunnel section. A load that acts on the reinforcing element is transferred from one of the side walls to the other side wall via the reinforcing member. The load is withstood by a highly rigid reinforcing element constituted by the left and right side walls and the reinforcing member.09-30-2010

Hitoshi Kato, Ibaraki JP

Patent application numberDescriptionPublished
20080310876IMAGE FORMING SYSTEM AND MAINTENANCE EXECUTION PROGRAM - There is provided an image forming system that are capable of preventing a user or operator from forgetting to carry out a maintenance operation based on required sub-maintenance items after execution of a maintenance operation based on an associated maintenance item, such as component replacement, cleaning, or adjustment. A table of maintenance items and sub-maintenance items associated with respective ones of the maintenance items is stored in a ROM. When a CPU determines that a maintenance operation based on a selected one of the maintenance items has been completed, the CPU determines whether or not there is any sub-maintenance item associated with the selected maintenance item, by referring to the table. When it is determined that there is one or more sub-maintenance items associated with the selected maintenance item, a CPU provides control to display the sub-maintenance item or items in an operating/display unit.12-18-2008
20100226679IMAGE FORMING SYSTEM AND MAINTENANCE EXECUTION PROGRAM - There is provided an image forming system that are capable of preventing a user or operator from forgetting to carry out a maintenance operation based on required sub-maintenance items after execution of a maintenance operation based on an associated maintenance item, such as component replacement, cleaning, or adjustment. A table of maintenance items and sub-maintenance items associated with respective ones of the maintenance items is stored in a ROM. When a CPU determines that a maintenance operation based on a selected one of the maintenance items has been completed, the CPU determines whether or not there is any sub-maintenance item associated with the selected maintenance item, by referring to the table. When it is determined that there is one or more sub-maintenance items associated with the selected maintenance item, a CPU provides control to display the sub-maintenance item or items in an operating/display unit.09-09-2010

Patent applications by Hitoshi Kato, Ibaraki JP

Hitoshi Kato, Sagamihara-Shi JP

Patent application numberDescriptionPublished
20100198956TELEPHONE EXCHANGE APPARATUS AND HOST NAME INFORMATION ASSIGNING METHOD USED THEREFORE - According to one embodiment, a telephone exchange apparatus includes a generator configured to automatically generate the host name information in accordance with a predetermined condition, when a registration request about an arbitrary communication apparatus to the management table is issued, and a controller configured to register the host name information generated by the generator in the management table by associating the host name information with the corresponding-communication apparatus.08-05-2010

Patent applications by Hitoshi Kato, Sagamihara-Shi JP

Hitoshi Kato, Aichi-Ken JP

Patent application numberDescriptionPublished
20100187089COLLECTION-AMOUNT DETECTION METHOD FOR PARTICULATE MATTERS AND COLLECTION-AMOUNT DETECTION APPARATUS THEREFOR AND EXHAUST-GAS CONVERTING APPARATUS07-29-2010

Hitoshi Kato, Yamanashi JP

Patent application numberDescriptionPublished
20100064969SEMICONDUCTOR MANUFACTURING PLANT - Fluorine gas generators are connected with semiconductor manufacturing apparatuses through a gas supplying system including a storage tank that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators. When one or more of the on-site fluorine gas generators are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses from the storage tank storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and with superior cost performance.03-18-2010

Hitoshi Kato, Tokyo JP

Patent application numberDescriptionPublished
20090215920SILANE POLYMER AND METHOD FOR FORMING SILICON FILM - There are provided a silane polymer having a higher molecular weight from the viewpoints of wettability when applied to a substrate, a boiling point and safety, a composition which can form a high-quality silicon film easily, a silicon film forming composition which comprises a silane polymer obtained by irradiating a photopolymerizable silane compound with light of specific wavelength range to photopolymerize it, and a method for forming a silicon film which comprises applying the composition to a substrate and subjecting the coating film to a heat treatment and/or a light treatment.08-27-2009

Patent applications by Hitoshi Kato, Tokyo JP

Hitoshi Kato, Yamanashi-Ken JP

Patent application numberDescriptionPublished
20090175705SUBSTRATE TRANSFER APPARATUS AND VERTICAL HEAT PROCESSING APPARATUS - The present invention restrains, during a transfer of a substrate, a central portion of the substrate from being warped by its own weight, which might be caused by a super-enlargement of a diameter of the substrate. A substrate transfer apparatus 07-09-2009