| Patent application number | Description | Published |
| 20110049718 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, ELECTRONIC INSTRUMENT, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM - When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess. | 03-03-2011 |
| 20110139272 | PROCESS-GAS SUPPLY AND PROCESSING SYSTEM - A process-gas supply system | 06-16-2011 |
| 20110237066 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM - The present invention is a method of manufacturing a semiconductor device comprising: forming a recess in an interlayer insulating film formed on a substrate surface, the recess being configured to be embedded with an upper conductive channel mainly made of copper to be electrically connected to a lower conductive channel; supplying a gas containing an organic compound of manganese, and forming a barrier layer made of a compound of manganese for preventing diffusion of copper to the interlayer insulating film, such that the barrier layer covers an exposed surface of the interlayer insulating film; after the formation of the barrier layer, supplying organic acid to the barrier layer in order to increase a ratio of manganese in the compound of manganese forming the barrier layer; after the supply of the organic acid, forming a seed layer mainly made of copper on a surface of the barrier layer; after the formation of the seed-layer, heating the substrate in order to separate out manganese from on the surface of the barrier layer or from in the barrier layer onto a surface of the seed layer; supplying a cleaning liquid to the seed layer in order to remove the manganese separated out on the surface of the seed layer by the heating; and after the supply of the cleaning liquid, forming the upper conductive channel mainly made of copper in the recess. | 09-29-2011 |
| Patent application number | Description | Published |
| 20100015334 | FILM FORMING METHOD AND APPARATUS, AND STORAGE MEDIUM - A method for film formation is provided that can significantly suppress the amount of a source gas consumed in the formation of a copper film on a substrate by supplying a gas of a metallic source material complex, for example, copper acetate, produced by the sublimation of a solid source material, as a source gas to the substrate to cause a chemical reaction of the source gas. A source gas produced by the sublimation of a solid source material is supplied into a processing chamber, and the source material is adsorbed as a solid onto an adsorption/desorption member within the processing chamber. Next, the source gas supply and exhaust are stopped, and the processing chamber is brought to the state of a closed space. Thereafter, the substrate is heated, and the source material is chemically reacted on the substrate to form a thin film on the substrate. | 01-21-2010 |
| 20100140802 | FILM FORMING METHOD AND FILM FORMING APPARATUS - On a surface of an object to be treated, a Mn-containing thin film or CuMn-containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn-containing source gas (or Mn-containing source gas and a Cu-containing gas) and an oxygen-containing gas (for instance, water vapor) as a processing gas. The Mn-containing thin film or the CuMn-containing alloy thin film can be formed with high step coverage in a fine recess formed on the surface of the object to be treated. | 06-10-2010 |
| Patent application number | Description | Published |
| 20110134458 | Printed matter examination apparatus, printed matter examination method, and printed matter examination system - A printed matter examination apparatus includes a master data acquiring unit configured to acquire master data that is data for printing and contains code information that is converted for printing; a code information acquiring unit configured to acquire unconverted code information; a code information recognition unit configured to recognize the converted code information from the acquired master data; and a code information examination unit configured to compare the converted code information recognized by the code information recognition unit with the acquired unconverted code information and determine that the converted code information is incorrect when the converted code information is not identical to the unconverted code information. | 06-09-2011 |
| 20110273732 | Method and apparatus for inspecting image, image forming apparatus, and computer-readable recording medium storing image inspecting program - An image inspecting apparatus includes a first light illuminating unit that irradiates a measured object on which an image is formed with illuminating light from a diagonal direction; an imaging unit that receives specular light of the illuminating light with which the measured object is irradiated by the first light illuminating unit; and an image inspecting unit that inspects the image. The image inspecting unit generates gloss reference data from density distribution data included in print data used for forming the image by using a converting unit. The image inspecting unit inspects a gloss distribution of the image by using the gloss reference data and a gloss distribution of the image that is generated based on an amount of the specular light received by the imaging unit. | 11-10-2011 |
| 20110279668 | IMAGE INSPECTION DEVICE AND IMAGE FORMING APPARATUS - An image inspection device includes a first illuminating unit illuminating an object from an oblique direction with a first illuminating light; an imaging unit receiving specular reflection light of the first illuminating light from the object; and a focusing unit focusing the specular reflection light on the imaging unit. The image inspection device is configured to inspect the image based on the intensity of the specular reflection light received by the imaging unit. The first illuminating unit includes light-emitting elements and an illumination light producing unit that is configured to deflect light emitted from the light-emitting elements and thereby to produce the first illuminating light such that the specular reflection light from the object enters a pupil of the focusing unit. | 11-17-2011 |
| 20110304862 | Image inspecting apparatus, image inspecting method, and image forming apparatus - An image inspecting apparatus includes a first light illuminating unit irradiating a measured object on which an image is formed with light from an inclined direction; a second light illuminating unit irradiating the measured object with light from a different direction; an imaging unit receiving reflected light of the light with which the measured object is irradiated by the first light illuminating unit and the second light illuminating unit; a first and a second reference plate having a mirror surface and a diffuse surface, respectively; and an image inspecting unit inspecting a gloss distribution of the image based on the amount of light received by the imaging unit and a correcting coefficient. | 12-15-2011 |