Patent application number | Description | Published |
20110049718 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, ELECTRONIC INSTRUMENT, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM - When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess. | 03-03-2011 |
20110139272 | PROCESS-GAS SUPPLY AND PROCESSING SYSTEM - A process-gas supply system | 06-16-2011 |
20110237066 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM - The present invention is a method of manufacturing a semiconductor device comprising: forming a recess in an interlayer insulating film formed on a substrate surface, the recess being configured to be embedded with an upper conductive channel mainly made of copper to be electrically connected to a lower conductive channel; supplying a gas containing an organic compound of manganese, and forming a barrier layer made of a compound of manganese for preventing diffusion of copper to the interlayer insulating film, such that the barrier layer covers an exposed surface of the interlayer insulating film; after the formation of the barrier layer, supplying organic acid to the barrier layer in order to increase a ratio of manganese in the compound of manganese forming the barrier layer; after the supply of the organic acid, forming a seed layer mainly made of copper on a surface of the barrier layer; after the formation of the seed-layer, heating the substrate in order to separate out manganese from on the surface of the barrier layer or from in the barrier layer onto a surface of the seed layer; supplying a cleaning liquid to the seed layer in order to remove the manganese separated out on the surface of the seed layer by the heating; and after the supply of the cleaning liquid, forming the upper conductive channel mainly made of copper in the recess. | 09-29-2011 |
Patent application number | Description | Published |
20100210097 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - Provided is a manufacturing method of a semiconductor device including a gate insulating film which can be formed into a thin film and of which film composition is easy to be controlled. The manufacturing method includes: forming a manganese oxide film for serving as a gate insulating film on a semiconductor substrate, on which a transistor is formed; forming a conductive film for serving as a gate electrode on the manganese oxide film; and forming a gate electrode and a gate insulating film by processing the conductive film and the manganese oxide film. | 08-19-2010 |
20100233865 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming an oxide film or an oxynitride film on a conductor for serving as one electrode of a capacitor; forming, on the oxide film or the oxynitride film, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor. | 09-16-2010 |
20100323512 | METAL OXIDE FILM FORMATION METHOD AND APPARATUS - [Problems] There is provided a metal oxide film forming method capable of controlling a film thickness of a metal oxide even if the metal oxide is subject to a self-limited thickness. | 12-23-2010 |
20120122289 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming, on a conductor for serving as one electrode of a capacitor, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor. | 05-17-2012 |
Patent application number | Description | Published |
20100316799 | FILM FORMING METHOD AND FILM FORMING APPARATUS - Disclosed is a film forming method including the steps of: producing a monovalent carboxylic acid metal salt gas by reacting a bivalent carboxylic acid metal salt with a carboxylic acid; supplying the monovalent carboxylic acid metal salt gas on a substrate to accumulate a monovalent carboxylic acid metal salt film; and decomposing the monovalent carboxylic acid metal salt film by supplying energy to the substrate formed with the monovalent carboxylic acid metal salt film so as to form a metallic film. | 12-16-2010 |
20130136859 | FILM FORMING METHOD AND PROCESSING SYSTEM - A film forming method performs a film forming process on a target object having on a surface thereof an insulating layer. The film forming method includes a first thin film forming step of forming a first thin film containing a first metal, an oxidation step of forming an oxide film by oxidizing the first thin film, and a second thin film forming step of forming a second thin film containing a second metal on the oxide film. | 05-30-2013 |
20130344703 | FILM FORMING METHOD AND FILM FORMING APPARATUS - In a film forming method, a coating composition containing film components is coated on a plastic substrate to form a coating film. By irradiating electromagnetic waves to the coating film, the coating film is dried and/or modified to form a film. The film can be a conductor film, a semi-conductor film or a dielectric film. When forming a conductor film, a coating composition containing metallic nanoparticles is used as the coating composition; when forming a semi-conductor film, an organic semi-conductor material is used as the coating composition; and when forming a dielectric film, an organic dielectric material is used as the coating composition. | 12-26-2013 |
Patent application number | Description | Published |
20100015334 | FILM FORMING METHOD AND APPARATUS, AND STORAGE MEDIUM - A method for film formation is provided that can significantly suppress the amount of a source gas consumed in the formation of a copper film on a substrate by supplying a gas of a metallic source material complex, for example, copper acetate, produced by the sublimation of a solid source material, as a source gas to the substrate to cause a chemical reaction of the source gas. A source gas produced by the sublimation of a solid source material is supplied into a processing chamber, and the source material is adsorbed as a solid onto an adsorption/desorption member within the processing chamber. Next, the source gas supply and exhaust are stopped, and the processing chamber is brought to the state of a closed space. Thereafter, the substrate is heated, and the source material is chemically reacted on the substrate to form a thin film on the substrate. | 01-21-2010 |
20100140802 | FILM FORMING METHOD AND FILM FORMING APPARATUS - On a surface of an object to be treated, a Mn-containing thin film or CuMn-containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn-containing source gas (or Mn-containing source gas and a Cu-containing gas) and an oxygen-containing gas (for instance, water vapor) as a processing gas. The Mn-containing thin film or the CuMn-containing alloy thin film can be formed with high step coverage in a fine recess formed on the surface of the object to be treated. | 06-10-2010 |
20120135612 | FILM FORMING METHOD, PRETREATMENT DEVICE, AND PROCESSING SYSTEM - A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant. | 05-31-2012 |
20140008326 | PLASMA GENERATION DEVICE, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma generation device has a microwave generation device which generates microwave, a waveguide tube having hollow interior and connected to the microwave device such that the tube has longitudinal direction in transmission direction of microwave and rectangular cross section in direction orthogonal to the transmission direction, a phase-shifting device which cyclically shifts phase of standing wave generated in the tube by microwave, and a gas supply device which supplies processing gas into the tube. The tube has antenna portion having one or more slot holes which release plasma generated by microwave to the outside, the slot hole is formed on wall forming short or long side of the antenna portion, and the tube plasmatizes the gas in atmospheric pressure state supplied into the tube by the microwave in the slot hole and releases the plasma to the outside from the slot hole. | 01-09-2014 |
Patent application number | Description | Published |
20110134458 | Printed matter examination apparatus, printed matter examination method, and printed matter examination system - A printed matter examination apparatus includes a master data acquiring unit configured to acquire master data that is data for printing and contains code information that is converted for printing; a code information acquiring unit configured to acquire unconverted code information; a code information recognition unit configured to recognize the converted code information from the acquired master data; and a code information examination unit configured to compare the converted code information recognized by the code information recognition unit with the acquired unconverted code information and determine that the converted code information is incorrect when the converted code information is not identical to the unconverted code information. | 06-09-2011 |
20110273732 | Method and apparatus for inspecting image, image forming apparatus, and computer-readable recording medium storing image inspecting program - An image inspecting apparatus includes a first light illuminating unit that irradiates a measured object on which an image is formed with illuminating light from a diagonal direction; an imaging unit that receives specular light of the illuminating light with which the measured object is irradiated by the first light illuminating unit; and an image inspecting unit that inspects the image. The image inspecting unit generates gloss reference data from density distribution data included in print data used for forming the image by using a converting unit. The image inspecting unit inspects a gloss distribution of the image by using the gloss reference data and a gloss distribution of the image that is generated based on an amount of the specular light received by the imaging unit. | 11-10-2011 |
20110279668 | IMAGE INSPECTION DEVICE AND IMAGE FORMING APPARATUS - An image inspection device includes a first illuminating unit illuminating an object from an oblique direction with a first illuminating light; an imaging unit receiving specular reflection light of the first illuminating light from the object; and a focusing unit focusing the specular reflection light on the imaging unit. The image inspection device is configured to inspect the image based on the intensity of the specular reflection light received by the imaging unit. The first illuminating unit includes light-emitting elements and an illumination light producing unit that is configured to deflect light emitted from the light-emitting elements and thereby to produce the first illuminating light such that the specular reflection light from the object enters a pupil of the focusing unit. | 11-17-2011 |
20110304862 | Image inspecting apparatus, image inspecting method, and image forming apparatus - An image inspecting apparatus includes a first light illuminating unit irradiating a measured object on which an image is formed with light from an inclined direction; a second light illuminating unit irradiating the measured object with light from a different direction; an imaging unit receiving reflected light of the light with which the measured object is irradiated by the first light illuminating unit and the second light illuminating unit; a first and a second reference plate having a mirror surface and a diffuse surface, respectively; and an image inspecting unit inspecting a gloss distribution of the image based on the amount of light received by the imaging unit and a correcting coefficient. | 12-15-2011 |
20120113443 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND STORAGE MEDIUM - An image processing apparatus includes a scanning unit configured to scan at least one of two surfaces of a printed material on both of which information is printed and to obtain a density image representing intensity distribution of diffuse reflection light from the scanned surface and a gloss image representing intensity distribution of specular reflection light from the scanned surface, a mask image generating unit configured to generate a mask image for the scanned surface based on the obtained gloss image, and a show-through removing unit configured to perform mask processing on the density image using the generated mask image to generate a show-through-removed image that does not include show-through information for the scanned surface. | 05-10-2012 |
Patent application number | Description | Published |
20120068603 | PLASMA GENERATING APPARATUS, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - An apparatus for generating plasma, comprises: a microwave generator configured to generate a microwave; a wave guide which is connected to the microwave generator, wherein the wave guide is elongated in a traveling direction of the microwave and has a hollow shape having a rectangular section in a direction perpendicular to the traveling direction; a gas feeder which is connected to the wave guide and feeds process gas into the wave guide; and an antenna unit which is a part of the wave guide and discharges plasma generated by the microwave to the outside, wherein the antenna unit has one or more slots formed on a wall constituting a short side in a section of the antenna unit, plasmarizes the process gas fed into the wave guide under an atmospheric pressure in the slots by the microwave, and discharges the plasma out of the slots. | 03-22-2012 |
20120180811 | DRY CLEANING METHOD OF SUBSTRATE PROCESSING APPARATUS - A dry cleaning method of a substrate processing apparatus includes forming a metal oxide by oxidizing a metal film adhered to the inside of a processing chamber of the substrate processing apparatus; forming a complex by reacting the metal oxide with β-diketone; and sublimating the complex to be removed. A cleaning gas containing oxygen and β-diketone is supplied into the processing chamber while heating the inside of the processing chamber. A flow rate ratio of oxygen to β-diketone in the cleaning gas is set such that a formation rate of the metal oxide is lower than a formation rate of the complex. | 07-19-2012 |
20130017328 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si—OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si—OH groups have been formed through a CVD method. | 01-17-2013 |