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Hitoshi Itoh

Hitoshi Itoh, Yamanashi-Ken JP

Patent application numberDescriptionPublished
20110049718METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, ELECTRONIC INSTRUMENT, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM - When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess.03-03-2011
20110139272PROCESS-GAS SUPPLY AND PROCESSING SYSTEM - A process-gas supply system 06-16-2011
20110237066METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM - The present invention is a method of manufacturing a semiconductor device comprising: forming a recess in an interlayer insulating film formed on a substrate surface, the recess being configured to be embedded with an upper conductive channel mainly made of copper to be electrically connected to a lower conductive channel; supplying a gas containing an organic compound of manganese, and forming a barrier layer made of a compound of manganese for preventing diffusion of copper to the interlayer insulating film, such that the barrier layer covers an exposed surface of the interlayer insulating film; after the formation of the barrier layer, supplying organic acid to the barrier layer in order to increase a ratio of manganese in the compound of manganese forming the barrier layer; after the supply of the organic acid, forming a seed layer mainly made of copper on a surface of the barrier layer; after the formation of the seed-layer, heating the substrate in order to separate out manganese from on the surface of the barrier layer or from in the barrier layer onto a surface of the seed layer; supplying a cleaning liquid to the seed layer in order to remove the manganese separated out on the surface of the seed layer by the heating; and after the supply of the cleaning liquid, forming the upper conductive channel mainly made of copper in the recess.09-29-2011

Hitoshi Itoh, Nirasaki JP

Patent application numberDescriptionPublished
20100210097MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - Provided is a manufacturing method of a semiconductor device including a gate insulating film which can be formed into a thin film and of which film composition is easy to be controlled. The manufacturing method includes: forming a manganese oxide film for serving as a gate insulating film on a semiconductor substrate, on which a transistor is formed; forming a conductive film for serving as a gate electrode on the manganese oxide film; and forming a gate electrode and a gate insulating film by processing the conductive film and the manganese oxide film.08-19-2010
20100233865SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming an oxide film or an oxynitride film on a conductor for serving as one electrode of a capacitor; forming, on the oxide film or the oxynitride film, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor.09-16-2010
20100323512METAL OXIDE FILM FORMATION METHOD AND APPARATUS - [Problems] There is provided a metal oxide film forming method capable of controlling a film thickness of a metal oxide even if the metal oxide is subject to a self-limited thickness.12-23-2010

Hitoshi Itoh, Yamanashi JP

Patent application numberDescriptionPublished
20100316799FILM FORMING METHOD AND FILM FORMING APPARATUS - Disclosed is a film forming method including the steps of: producing a monovalent carboxylic acid metal salt gas by reacting a bivalent carboxylic acid metal salt with a carboxylic acid; supplying the monovalent carboxylic acid metal salt gas on a substrate to accumulate a monovalent carboxylic acid metal salt film; and decomposing the monovalent carboxylic acid metal salt film by supplying energy to the substrate formed with the monovalent carboxylic acid metal salt film so as to form a metallic film.12-16-2010

Hitoshi Itoh, Nirasaki-Shi JP

Patent application numberDescriptionPublished
20100015334FILM FORMING METHOD AND APPARATUS, AND STORAGE MEDIUM - A method for film formation is provided that can significantly suppress the amount of a source gas consumed in the formation of a copper film on a substrate by supplying a gas of a metallic source material complex, for example, copper acetate, produced by the sublimation of a solid source material, as a source gas to the substrate to cause a chemical reaction of the source gas. A source gas produced by the sublimation of a solid source material is supplied into a processing chamber, and the source material is adsorbed as a solid onto an adsorption/desorption member within the processing chamber. Next, the source gas supply and exhaust are stopped, and the processing chamber is brought to the state of a closed space. Thereafter, the substrate is heated, and the source material is chemically reacted on the substrate to form a thin film on the substrate.01-21-2010
20100140802FILM FORMING METHOD AND FILM FORMING APPARATUS - On a surface of an object to be treated, a Mn-containing thin film or CuMn-containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn-containing source gas (or Mn-containing source gas and a Cu-containing gas) and an oxygen-containing gas (for instance, water vapor) as a processing gas. The Mn-containing thin film or the CuMn-containing alloy thin film can be formed with high step coverage in a fine recess formed on the surface of the object to be treated.06-10-2010

Hitoshi Itoh, Tokyo JP

Patent application numberDescriptionPublished
20080232683Image processing apparatus, image processing method and computer program product - An image processing apparatus includes a first separator, a second separator, a dividing unit, and a generating unit. The first separator separates image data into character image data and other image data. The second separator separates the character image data into shape image data and color image data. The dividing unit divides the shape image data and the color image data based on a dividing size decided from the size of the image data and the capacity of processing memory used in output processing of the image data. The generating unit generates additional information for combining a corresponding pair of divided shape image data and divided color image data with the other image data.09-25-2008

Hitoshi Itoh, Kanagawa JP

Patent application numberDescriptionPublished
20110134458Printed matter examination apparatus, printed matter examination method, and printed matter examination system - A printed matter examination apparatus includes a master data acquiring unit configured to acquire master data that is data for printing and contains code information that is converted for printing; a code information acquiring unit configured to acquire unconverted code information; a code information recognition unit configured to recognize the converted code information from the acquired master data; and a code information examination unit configured to compare the converted code information recognized by the code information recognition unit with the acquired unconverted code information and determine that the converted code information is incorrect when the converted code information is not identical to the unconverted code information.06-09-2011
20110273732Method and apparatus for inspecting image, image forming apparatus, and computer-readable recording medium storing image inspecting program - An image inspecting apparatus includes a first light illuminating unit that irradiates a measured object on which an image is formed with illuminating light from a diagonal direction; an imaging unit that receives specular light of the illuminating light with which the measured object is irradiated by the first light illuminating unit; and an image inspecting unit that inspects the image. The image inspecting unit generates gloss reference data from density distribution data included in print data used for forming the image by using a converting unit. The image inspecting unit inspects a gloss distribution of the image by using the gloss reference data and a gloss distribution of the image that is generated based on an amount of the specular light received by the imaging unit.11-10-2011
20110279668IMAGE INSPECTION DEVICE AND IMAGE FORMING APPARATUS - An image inspection device includes a first illuminating unit illuminating an object from an oblique direction with a first illuminating light; an imaging unit receiving specular reflection light of the first illuminating light from the object; and a focusing unit focusing the specular reflection light on the imaging unit. The image inspection device is configured to inspect the image based on the intensity of the specular reflection light received by the imaging unit. The first illuminating unit includes light-emitting elements and an illumination light producing unit that is configured to deflect light emitted from the light-emitting elements and thereby to produce the first illuminating light such that the specular reflection light from the object enters a pupil of the focusing unit.11-17-2011
20110304862Image inspecting apparatus, image inspecting method, and image forming apparatus - An image inspecting apparatus includes a first light illuminating unit irradiating a measured object on which an image is formed with light from an inclined direction; a second light illuminating unit irradiating the measured object with light from a different direction; an imaging unit receiving reflected light of the light with which the measured object is irradiated by the first light illuminating unit and the second light illuminating unit; a first and a second reference plate having a mirror surface and a diffuse surface, respectively; and an image inspecting unit inspecting a gloss distribution of the image based on the amount of light received by the imaging unit and a correcting coefficient.12-15-2011

Hitoshi Itoh, Nirasaki City JP

Patent application numberDescriptionPublished
20120068603PLASMA GENERATING APPARATUS, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - An apparatus for generating plasma, comprises: a microwave generator configured to generate a microwave; a wave guide which is connected to the microwave generator, wherein the wave guide is elongated in a traveling direction of the microwave and has a hollow shape having a rectangular section in a direction perpendicular to the traveling direction; a gas feeder which is connected to the wave guide and feeds process gas into the wave guide; and an antenna unit which is a part of the wave guide and discharges plasma generated by the microwave to the outside, wherein the antenna unit has one or more slots formed on a wall constituting a short side in a section of the antenna unit, plasmarizes the process gas fed into the wave guide under an atmospheric pressure in the slots by the microwave, and discharges the plasma out of the slots.03-22-2012