| Patent application number | Description | Published |
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| 20080199818 | Vertical heat processing apparatus and heat processing method using the vertical heat processing apparatus - The present invention is a vertical heat processing apparatus comprising: a heat processing furnace having a furnace opening; a lid member for closing the furnace opening of the heat processing furnace; a first substrate holder and a second substrate holder, each of which is capable of holding a plurality of substrates in a tier-like manner and of being alternately placed on the lid member through a heat retention tube; an elevating mechanism that vertically moves the lid member to load one of the substrate holders into the heat processing furnace, and to unload the one of the substrate holders from the heat processing furnace; a holder table configured to be placed thereon the other of the substrate holders for transfer of the substrates, when the one of the substrate holders is in the heat processing furnace; and a holder conveying mechanism configured to convey the respective substrate holders between the holder table and the heat retention tube; wherein the holder table is provided with a holder gripping mechanism for gripping the substrate holder to prevent turnover thereof. | 08-21-2008 |
| 20090092940 | Processing system for process object and thermal processing method for process object - To provide a processing system for a process object capable of preventing a transport arm mechanism from being thermally damaged, so as to effectively perform a transport operation of the process object. A processing system | 04-09-2009 |
| 20090101472 | Workpiece transfer mechanism, workpiece transfer method and workpiece processing system - A workpiece transfer mechanism | 04-23-2009 |
| 20100098517 | PROCESSING APPARATUS AND PROCESSING METHOD - A processing apparatus including: a carry-in area into which a container containing substrates to be processed is carried, the container having a flange part on an upper part thereof and an opening in a front surface thereof, with a lid being detachably fixed to the opening; a transfer area whose atmosphere is maintained differently from an atmosphere of the carry-in area; a partition wall separating the carry-in area and transfer area; a through-hole formed in the partition wall; a door configured to open and close the through-hole; and a table on which the container can be placed in the carry-in area. After the container has been placed and then held on the table, the container is brought into contact with the through-hole, the door and the lid are opened, and the substrates to be processed in the container are conveyed to the transfer area so as to process the substrates. | 04-22-2010 |
| Patent application number | Description | Published |
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| 20110300719 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - When an object to be processed is transferred into a process chamber capable of keeping a vacuum and an interior of the process chamber is kept in a vacuum state, the film formation method includes performing forming a first ZrO film on the object to be processed by supplying a zirconium material and an oxidizing agent in the order listed above into the process chamber and forming a second ZrO film doped with Si on the object to be processed by supplying the zirconium material, a silicon material, and the oxidizing agent in the order listed above into the process chamber, in such a way that a number of times the forming the first ZrO film is performed and a number of times the forming the second ZrO film is performed are adjusted, respectively, to form a zirconia-based film having a predetermined film thickness while controlling a Si concentration in the film. | 12-08-2011 |
| 20120067846 | Liquid Processing Method, Recording Medium Having Recorded Program for Executing Liquid Processing Method Therein and Liquid Processing Apparatus - Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid. | 03-22-2012 |
| 20120077322 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ADSORPTION SITE BLOCKING ATOMIC LAYER DEPOSITION METHOD - To provide a dielectric film having good crystallinity while suppressing an influence of the size effects and preventing the dielectric film from being divided by an Al-doped layer although there is provided the Al-doped layer for improving the leakage characteristics in the dielectric film of a capacitor, the dielectric film has at least one Al-doped layer, and an area density of Al atoms in one layer of the Al-doped layer is smaller than 1.4E+14′ atoms/cm | 03-29-2012 |
