| Patent application number | Description | Published |
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| 20090104728 | Gallium Nitride-Based Compound Semiconductor Multilayer Structure and Production Method Thereof - An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant. | 04-23-2009 |
| 20090294791 | ELECTRODE FOR SEMICONDUCTOR LIGHT EMITTING DEVICE - An object of the present invention is to provide an electrode that can produce powerful light emission with low driving voltage, without reducing crystallinity. | 12-03-2009 |
| 20100059760 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE AND PROCESS FOR ITS PRODUCTION - It is an object of the present invention to provide a gallium nitride-based compound semiconductor light emitting device with high light emission output and low driving voltage. | 03-11-2010 |
| 20100181595 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention aims to enhance the light extraction efficiency of the Group III nitride semiconductor light-emitting device. | 07-22-2010 |
| 20100301379 | METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T | 12-02-2010 |
| 20110163350 | METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber and forming a Group III nitride semiconductor layer added with Si as a dopant on the substrate by a reactive sputtering method, wherein a Si hydride is added in the gas for formation of a plasma. | 07-07-2011 |
| Patent application number | Description | Published |
|---|
| 20080230800 | N-Type Group III Nitride Semiconductor Layered Structure - An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer. | 09-25-2008 |
| 20080246053 | P-Type Group III Nitride Semiconductor and Production Method Thereof - An object of the present invention is to provide a method for producing a p-type Group III nitride semiconductor which can be used to produce a light-emitting device exhibiting a low operation voltage and a sufficiently high reverse voltage. | 10-09-2008 |
| 20090078951 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency. | 03-26-2009 |
| 20090087936 | DEPOSITION METHOD OF III GROUP NITRIDE COMPOUND SEMICONDUCTOR LAMINATED STRUCTURE - The present invention provides a deposition method of a multilayered structure composed of a III group nitride compound semiconductor having good crystallinity on a substrate. The multilayered structure comprises at least a buffer layer and an underlying layer from the substrate side, and the buffer layer and the underlying layer are formed by a sputtering method. A deposition temperature of the buffer layer is adjusted to a temperature lower than a deposition temperature of the underlying layer, or the thickness of the buffer layer is adjusted to 5 nm to 500 nm. Furthermore, the multilayered structure comprises at least an underlying layer and a light-emissive layer from the substrate side and the underlying layer is formed by a sputtering method, and the method comprises the step of forming the light-emissive layer by a metal-organic chemical vapor deposition (MOCVD method). | 04-02-2009 |
| 20090146161 | GROUP III NITRIDE COMPOUND SEMICONDUCTOR STACKED STRUCTURE - An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate. | 06-11-2009 |
| 20090152585 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material. | 06-18-2009 |
| 20090184329 | Positive electrode for semiconductor light-emitting device - An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage. | 07-23-2009 |
