| Patent application number | Description | Published |
|---|
| 20090027158 | Stacked electronic part and method of manufacturing the same - Provided are a stacked electronic part that can sufficiently suppress plating deposition on the surface of a porous green body when a terminal electrode is formed on an external electrode, thereby enabling a decrease in the reliability of products to be prevented, and a method of manufacturing the stacked electronic part. The stacked electronic part | 01-29-2009 |
| 20090053853 | METHOD FOR MANUFACTURING ELECTRONIC COMPONENT - A chip element in the form of a substantially rectangular parallelepiped having end surfaces and side surfaces is formed (step of forming chip element). An electrically conductive green sheet is formed (step of forming electrically conductive green sheet). An electrically conductive paste is applied to the end surfaces of the chip element (step of application electrically conductive paste). A chip element is formed in which the electrically conductive green sheet is attached to the end surface via the electrically conductive paste applied to the end surface of the chip element (step of attaching electrically conductive sheet). In the step of attaching, the end surface of the electrically conductive green sheet on the side of the side surfaces is positioned on the outside of the side surfaces, and the electrically conductive paste applied to the end surface is pressed out into a space between the electrically conductive green sheet and ridge portions. | 02-26-2009 |
| 20100178737 | Semiconductor IC and Its Manufacturing Method, and Module with Embedded Semiconductor IC and Its Manufacturing Method - A semiconductor IC includes a semiconductor IC main body having a predetermined circuit formed on a main surface, a metal layer selectively provided on substantially the whole back surface of the semiconductor IC main body excluding the periphery. According to the present invention, the metal layer provided on the semiconductor IC main body can dissipate heat at a high level. Because the metal layer is selectively provided, even when the semiconductor IC main body is thinned by polishing, warpage does not occur easily in a wafer state. The metal layer is selectively provided at the center of the back surface of the semiconductor IC. Therefore, a laminate of a semiconductor wafer and a thick metal does not need to be diced. As a result, chipping on the disconnected surface can be prevented effectively. | 07-15-2010 |
| 20100202098 | CERAMIC ELECTRONIC PART - A ceramic electronic part | 08-12-2010 |
| 20110048774 | PLATING FILM, PRINTED WIRING BOARD, AND MODULE SUBSTRATE - The present invention provides a plating film | 03-03-2011 |
| 20110051314 | CERAMIC ELECTRONIC COMPONENT AND METHOD FOR PRODUCING SAME - There are provided a ceramic electronic component and a method for producing the ceramic electronic component, where a ground electrode layer can be directly coated with lead-free solder without lowering reliabilities. Terminal electrode | 03-03-2011 |
| 20110056744 | TERMINAL STRUCTURE, PRINTED WIRING BOARD, MODULE SUBSTRATE, AND ELECTRONIC DEVICE - The present invention provides a terminal structure | 03-10-2011 |
| 20110171378 | METHOD FOR PRODUCING COVERED PARTICLES - A method for producing covered particles, comprising: a mixing step of mixing a fluid containing particles comprising at least one type of substance selected from among metals, metal oxides and ceramics, a silsesquioxane having a functional group with an affinity for carbon dioxide, and supercritical carbon dioxide; and a covering step of reducing pressure of the fluid to gasify the supercritical carbon dioxide, while adhering the silsesquioxane onto the particles, and thereby obtaining covered particles comprising the particles and silsesquioxane covering the particles. | 07-14-2011 |
