Patent application number | Description | Published |
20080265161 | Electron Microscope And Electron Beam Inspection System - An electron microscope includes an electron source, a stage for mounting a specimen, an illuminating lens system that illuminates an electron beam onto the specimen, an imaging lens system that forms a specimen image using a reflecting electron beam of the illuminating electron beam, a beam separator that separates the illuminating electron beam and the reflecting electron beam, a control unit that controls current to be supplied to the beam separator; and a switching unit which enables switching between a first mode and a second mode. The control unit changes a value of the current to be supplied to the beam separator when switching from the first mode to the second mode. | 10-30-2008 |
20090039264 | ELECTRON MICROSCOPE - Disclosed herein are a method for applying, while a charged particle beam is in a state being irradiated toward the sample, a voltage to the sample so that the charged particle beam does not reach the sample (hereafter such state may be referred to as a mirror state) and detecting information on a potential of a sample using a signal obtained then, and a device for automatically adjusting conditions of the device based on the result of measuring. | 02-12-2009 |
20090261252 | Method and apparatus for pattern inspection - Because a mirror electron imaging type inspection apparatus for obtaining an inspection object image with mirror electrons has been difficult to optimize inspection conditions, since the image forming principles of the apparatus are different from those of conventional SEM type inspection apparatuses. In order to solve the above conventional problem, the present invention has made it possible for the user to examine such conditions as inspection speed, inspection sensitivity, etc. intuitively by displaying the relationship among the values of inspection speed S, inspection object digital signal image pixel size D, inspection object image size L, and image signal acquisition cycle P with use of a time delay integration method as a graph on an operation screen. The user can thus determine a set of values of a pixel size, an inspection image width, and a TDI sensor operation cycle easily with reference to the displayed graph. | 10-22-2009 |
20110278454 | SCANNING ELECTRON MICROSCOPE - A scanning electron microscope having a charged particle beam that when in a state being irradiated toward a sample, a voltage is applied to the sample so that the charged particle beam does not reach the sample. The scanning electron microscope also detects information on a potential of a sample using a signal obtained, and a device for automatically adjusting conditions based on the result of measuring. | 11-17-2011 |
20120104272 | CHARGED PARTICLE GUN AND CHARGED PARTICLE BEAM DEVICE - The present invention provides a charged particle gun including: a charged particle source ( | 05-03-2012 |
20130140977 | CHARGED PARTICLE BEAM RADIATION APPARATUS - In an accelerating tube which uses a conductive insulator, there is a possibility that the dopant concentration on a surface of the conductive insulator becomes non-uniform so that the surface resistance of the conductive insulator becomes non-uniform. Accordingly, a circumferential groove is formed on the inner surface of the conductive insulator accelerating tube in plural stages, and metal is metalized along inner portions of the grooves. When the resistance of a specific portion on the surface of the accelerating tube differs from the resistance of an area around the specific portion, the potential of the metalized region on the inner surface of the accelerating tube becomes a fixed value and hence, the potential distribution on the inner surface of the accelerating tube in the vertical direction can be maintained substantially equal without regard to the circumferential direction. | 06-06-2013 |
20130200788 | FIELD-EMISSION ELECTRON GUN AND METHOD FOR CONTROLLING SAME - The disclosed charged particle beam apparatus includes a field-emission electron source including <310> single crystal of tungsten; a vacuum chamber having the electron source therein; an exhausting system for exhausting the vacuum chamber; a filament connected to the electron source to let flow a current through the electron source and thereby heat the electron source; a power supply for letting a current flow through the filament; an ammeter for measuring a total current emitted from the electron source; and a controlling unit for exercising control to cause the power supply to let a current flow through the filament when the total current measured periodically has become a predetermined ratio or less as compared with a total current from the electron source found immediately after first electron beam emission, or a total current from the electron beam found immediately after a current is let flow through the filament. | 08-08-2013 |
20150255240 | Method for Manufacturing Electron Source - A conventional method to process a tip fails to designate the dimension of the shape of the end of the tip, and so fails to obtain a tip having any desired diameter. Impurities may be attached to the tip. Based on a correlation between the voltage applied or the time during processing of the end of the tip and the diameter of the tip end, the applied voltage is controlled so as to obtain a desired diameter of the tip end for processing of the tip. This allows a sharpened tip made of a tungsten monocrystal thin wire to be manufactured to have any desired diameter in the range of 0.1 μm or more and 2.0 μm or less. | 09-10-2015 |