Inventors list

Assignees list

Classification tree browser

Top 100 Inventors

Top 100 Assignees


Hisashi Nakagawa

Hisashi Nakagawa, Tokyo-To JP

Patent application numberDescriptionPublished
20090058594MANAGEMENT SYSTEM - A management system manages use of management object provided in facilities by using an information storage medium of a user. An entrance management apparatus, provided in the vicinity of an entrance of the facilities, stores use permission information for permitting the use of the management object on an information storage medium when the user enters the facilities. In the facilities, a use management apparatus, provided for each management object, controls availability or unavailability of the management object based on the use permission information stored on the information storage medium. Additionally, the use management apparatus stores, in the information storage medium, use information showing that the management object is used. Further, a room leaving management apparatus, provided in the vicinity of an exit of the facilities, manages leaving of the user based on the use information stored on the information storage medium. When the user leaves the facilities, it is controlled whether or not the user can leave the facilities, and use history information is stored, based on the use information.03-05-2009
20110093928MANAGEMENT SYSTEM - A management system manages use of management object provided in facilities by using an information storage medium of a user. An entrance management apparatus, provided in the vicinity of an entrance of the facilities, stores use permission information for permitting the use of the management object on an information storage medium when the user enters the facilities. In the facilities, a use management apparatus, provided for each management object, controls availability or unavailability of the management object based on the use permission information stored on the information storage medium. Additionally, the use management apparatus stores, in the information storage medium, use information showing that the management object is used. Further, a room leaving management apparatus, provided in the vicinity of an exit of the facilities, manages leaving of the user based on the use information stored on the information storage medium. When the user leaves the facilities, it is controlled whether or not the user can leave the facilities, and use history information is stored, based on the use information.04-21-2011

Hisashi Nakagawa, Tokyo JP

Patent application numberDescriptionPublished
20110042789MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM - A chemical vapor deposition material includes an organosilane compound shown by the following general formula (1).02-24-2011

Hisashi Nakagawa, Ibaraki JP

Patent application numberDescriptionPublished
20090281237POLYCARBOSILANE, METHOD FOR PRODUCING SAME, SILICA COMPOSITION FOR COATING APPLICATION, AND SILICA FILM - A polycarbosilane has a main chain in which silicon atoms and carbon atoms are alternately repeated, and includes a structural unit shown by the following general formula (1), a structural unit shown by the following general formula (2), a structural unit shown by the following general formula (3), and a structural unit shown by the following general formula (4).11-12-2009
20100007025ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE - An insulating-film-forming composition for a semiconductor device comprising an organic silica sol with a carbon atom content of 11 to 17 atom % and an organic solvent is disclosed. The organic silica sol comprises a hydrolysis-condensation product P1 and a hydrolysis-condensation product P2. The hydrolysis-condensation product P1 is obtained by hydrolyzing and condensing (A) a silane monomer comprising a hydrolyzable group and (B) a polycarbosilane comprising a hydrolyzable group in the presence of (C) a basic catalyst, and the hydrolysis-condensation product P2 is obtained by hydrolyzing and condensing (D) a silane monomer comprising a hydrolyzable group.01-14-2010
20100174103MATERIAL FOR FORMING SILICON-CONTAINING FILM, AND SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME - A silicon-containing film-forming material includes at least one organosilane compound shown by the following general formula (1).07-08-2010
20100261925METHOD FOR PRODUCING SILICON COMPOUND - A method of producing a silicon compound shown by the following general formula (7) includes reacting an organomagnesium compound shown by the following general formula (1) with an organosilane compound shown by the following general formula (2) in a solvent that contains at least one compound selected from a compound shown by the following general formula (3), a compound shown by the following general formula (4), a compound shown by the following general formula (5), and a compound shown by the following general formula (6).10-14-2010

Hisashi Nakagawa, Tsukuba-Shi JP

Patent application numberDescriptionPublished
20100168327POLYMER AND PROCESS FOR PRODUCING THE SAME, COMPOSITION FOR FORMING INSULATING FILM, AND INSULATING FILM AND METHOD OF FORMING THE SAME - A process for producing a polymer includes mixing (A) a polysiloxane compound and (B) a polycarbosilane compound in the presence of a catalyst, water, and an organic solvent, and heating the mixture.07-01-2010

Patent applications by Hisashi Nakagawa, Tsukuba-Shi JP

Hisashi Nakagawa, Belmont, MA US

Patent application numberDescriptionPublished
20090299086METHOD OF PRODUCING ORGANOSILICON COMPOUND - A method of producing an organosilicon compound includes substituting at least an OR12-03-2009
20100140754FILM-FORMING MATERIAL, SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME - Disclosed is a silicon-containing film-forming material which contains an organosilane compound represented by the following general formula (1). (In the formula, R1-R4 may be the same or different and represent a hydrogen atom, an alkyl group having 1-4 carbon atoms, a vinyl group or a phenyl group; R5 represents an alkyl group having 1-4 carbon atoms, an acetyl group or a phenyl group; n represents an integer of 1-3; and m represents an integer of 1-2.)06-10-2010

Hisashi Nakagawa, Ibaraki-Ken JP

Patent application numberDescriptionPublished
20080268264Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation - A method of forming an organic silica film includes forming a coating including a silicon compound having an —Si—O—Si— structure and an —Si—CH10-30-2008