Patent application number | Description | Published |
20080230823 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device having an active element and an MIM capacitor and a structure capable of reducing the number of the manufacturing steps thereof and a manufacturing method therefor are provided. The semiconductor device has a structure that the active element having an ohmic electrode and the MIM capacitor having a dielectric layer arranged between a lower electrode and an upper electrode are formed on a semiconductor substrate, wherein the lower electrode and ohmic electrode have the same structure. | 09-25-2008 |
20090242943 | SEMICONDUCTOR DEVICE - A semiconductor device which can prevent peeling off of a gate electrode is provided. The semiconductor device has GaN buffer layer formed on substrate | 10-01-2009 |
20090250730 | MICROWAVE SEMICONDUCTOR DEVICE USING COMPOUND SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME - An undoped AlGaN layer | 10-08-2009 |
20100059798 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - There is provided a semiconductor device including: a SiC substrate; an AlGaN layer formed on the SiC substrate; a source electrode and a drain electrode formed on the AlGaN layer so as to be spaced from each other; a first insulation film formed between the source electrode and the drain electrode and having a band-like opening parallel to the drain electrode and the source electrode; a gate electrode formed at the opening in the first insulation film; a second insulation film formed on the first insulation film in such a manner as to cover a surface of the gate electrode; and a source field plate electrode which is formed on the second insulation film and the source electrode and an end portion of which on the drain electrode side is spaced from the second insulation film, thereby suppressing degradation in device performance. | 03-11-2010 |
20100059800 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A semiconductor device including: a SiC substrate; an AlGaN layer formed on the SiC substrate; a source electrode and a drain electrode formed on the AlGaN layer so as to be spaced from each other; an insulation film formed between the source electrode and the drain electrode and having a band-like opening in parallel to the source electrode and the drain electrode; a gate electrode formed at the opening in the insulation film; and a drain-side field plate electrode formed integrally with the gate electrode on the drain electrode side of the gate electrode and having a drain electrode side end portion spaced from the insulation film, thus restraining degradation in performance. | 03-11-2010 |
20100252863 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - A semiconductor device which reduces a source resistance and a manufacturing method for the same are provided. The semiconductor device has a nitride based compound semiconductor layer arranged on a substrate, an active region which has an aluminum gallium nitride layer arranged on the nitride based compound semiconductor layer, and a gate electrode, source electrode and drain electrode arranged on the active region. The semiconductor device has gate terminal electrodes, source terminal electrodes and drain terminal electrode connected to the gate electrode, source electrode and drain electrode respectively. The semiconductor device has end face electrodes which are arranged on a side face of the substrate by a side where the source terminal electrode is arranged, and which are connected to the source terminal electrode. The semiconductor device has a projection arranged on the end face electrode which prevents solder used in die bonding from reaching the source terminal electrodes. | 10-07-2010 |
20100252864 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - A semiconductor device which reduces source resistance and a manufacturing method for the same are provided. A semiconductor device has a nitride based compound semiconductor layer on a substrate and an active region on the nitride based compound semiconductor layer. The semiconductor device has a gate electrode, a source electrode and a drain on the active region, a source terminal electrode connected to the source electrode arranged on the nitride based compound semiconductor layer in a direction which the source electrode extends. Furthermore, the semiconductor device has an end face electrode which is arranged on the end face of the substrate in a source terminal electrode side, is connected to the source terminal electrode, and includes a multilayer metal layer including three or more layers which includes different metals, and prevents solder for die bonding from reaching the source terminal electrode. | 10-07-2010 |
20110221036 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device having an active element and an MIM capacitor and a structure capable of reducing the number of the manufacturing steps thereof and a manufacturing method therefor are provided. The semiconductor device has a structure that the active element having an ohmic electrode and the MIM capacitor having a dielectric layer arranged between a lower electrode and an upper electrode are formed on a semiconductor substrate, wherein the lower electrode and ohmic electrode have the same structure. In an MMIC | 09-15-2011 |
20120074470 | MICROWAVE SEMICONDUCTOR DEVICE USING COMPOUND SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME - An undoped AlGaN layer 13 is formed on a buffer layer composed of a GaN series material formed on a semiconductor substrate, a drain electrode | 03-29-2012 |
20130093006 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a semiconductor layer, an insulating film, a gate electrode, a drain electrode, and a source electrode. The semiconductor layer includes an active layer and is formed on a semi-insulating semiconductor substrate, and a tapered recess area having an inclined sidewall is formed on a surface of the semiconductor layer. The insulating film is formed on the semiconductor layer and has a through hole for exposing the recess area. The through hole has a tapered sidewall which is inclined at an angle smaller than the sidewall of the recess area. The gate electrode is formed so as to fill the recess area and the through hole. The drain electrode and the source electrode are formed at positions on opposite sides of the recess area on the semiconductor layer. | 04-18-2013 |
20130313563 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - A semiconductor device which reduces a source resistance and a manufacturing method for the same are provided. The semiconductor device has a nitride based compound semiconductor layer arranged on a substrate, an active region which has an aluminum gallium nitride layer arranged on the nitride based compound semiconductor layer, and a gate electrode, source electrode and drain electrode arranged on the active region. The semiconductor device has gate terminal electrodes, source terminal electrodes and drain terminal electrode connected to the gate electrode, source electrode and drain electrode respectively. The semiconductor device has end face electrodes which are arranged on a side face of the substrate by a side where the source terminal electrode is arranged, and which are connected to the source terminal electrode. The semiconductor device has a projection arranged on the end face electrode which prevents solder used in die bonding from reaching the source terminal electrodes. | 11-28-2013 |
20140209924 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - A semiconductor device which reduces a source resistance and a manufacturing method for the same are provided. The semiconductor device has a nitride based compound semiconductor layer arranged on a substrate, an active region which has an aluminum gallium nitride layer arranged on the nitride based compound semiconductor layer, and a gate electrode, source electrode and drain electrode arranged on the active region. The semiconductor device has gate terminal electrodes, source terminal electrodes and drain terminal electrode connected to the gate electrode, source electrode and drain electrode respectively. The semiconductor device has end face electrodes which are arranged on a side face of the substrate by a side where the source terminal electrode is arranged, and which are connected to the source terminal electrode. The semiconductor device has a projection arranged on the end face electrode which prevents solder used in die bonding from reaching the source terminal electrodes. | 07-31-2014 |
20140231997 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device concerning the embodiment includes a semiconductor layer which has a first surface and a second surface which is opposite to the first surface, an interlayer which is provided on the first surface and which consists of only metal whose standard oxidation-reduction potential is not lower than 0 (zero) V in an ionization tendency, and an electrode provided on the interlayer. The semiconductor device further includes an electrical conductive layer which covers an inside of a hole which is formed in the semiconductor layer so as to reach the interlayer the interlayer from the second surface, and which is electrically connected to the electrode via the interlayer which is exposed to a bottom of the hole. | 08-21-2014 |