| Patent application number | Description | Published |
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| 20080233272 | Film Formation Apparatus, Manufacturing Apparatus, Film Formation Method, and Method for Manufacturing Light-Emitting Device - To improve the use efficiency of a vapor-deposition material, reduce the manufacturing cost of a light-emitting device including a layer containing an organic compound, and shorten the manufacturing time for manufacturing a light-emitting device. Inside of a film formation chamber is made in a reduced pressure state, and conductive-surface substrate is energized, so that the conductive-surface substrate is heated rapidly, and a material layer over the conductive-surface substrate is evaporated in a short period of time to be vapor-deposited on a film formation substrate, whereby film formation of the material layer is performed on the film formation substrate. Note that the heating area of the conductive-surface substrate which is rapidly heated is set to be the same size as the film formation substrate so that film formation on one film formation substrate is completed by one heating. | 09-25-2008 |
| 20080246028 | MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING MEMORY DEVICE - Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer. | 10-09-2008 |
| 20080260938 | Film Formation Apparatus, Film Formation Method, Manufacturing Apparatus, and Method for Manufacturing Light-Emitting Device - An object is to improve use efficiency of an evaporation material, to reduce manufacturing cost of a light-emitting device, and to reduce manufacturing time needed for a light-emitting device including a layer containing an organic compound. The pressure of a film formation chamber is reduced, a plate is rapidly heated by heat conduction or heat radiation by using a heat source, a material layer on a plate is vaporized in a short time to be evaporated to a substrate on which the material layer is to be formed (formation substrate), and then the material layer is formed on the formation substrate. The area of the plate that is heated rapidly is set to have the same size as the formation substrate and film formation on the formation substrate is completed by one application of heat. | 10-23-2008 |
| 20080268135 | MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE - For a full-color flat panel display, demands for high definition, high aperture ratio and high reliability have been increasing. Therefore, increasing in the number of pixels and narrowing a pixel pitch have been major issues. According to the present invention, a layer including an organic compound is selectively formed with a light-exposure apparatus used in a photolithography technique without a resist mask. A material layer including a photopolymerization initiator, a material polymerized with the photopolymerization initiator, and an organic compound are formed on a plate, and then are exposed to light and selectively cured. A film-formation substrate is disposed so as to face the plate. The film-formation substrate or the material layer is heated so that the organic compound included in a region exposed to light or a region not exposed to light is evaporated to be selectively deposited on the surface of the film-formation substrate. | 10-30-2008 |
| 20080268561 | Manufacturing Method of Light-Emitting Device - An object is to provide a manufacturing method of a light-emitting device including an organic compound layer, in which a desired organic compound layer is easily formed using a plurality of evaporation materials. A first organic compound layer containing a plurality of evaporation materials is formed over a first substrate. The first organic compound layer is formed using a mixture formed by mixture of the plurality of evaporation materials in advance. A second substrate is placed at a position facing the first substrate so as to face the first organic compound layer provided for the first substrate. The first organic compound layer as an evaporation source is heated to be vaporized and a desired second organic compound layer is formed over the second substrate placed so as to face the first substrate. Accordingly, a light-emitting device is manufactured. | 10-30-2008 |
| 20080299496 | Manufacturing Apparatus and Manufacturing Method of Light-Emitting Device - Demands such as higher definition, higher opening aperture, and higher reliability on a full-color flat panel display have been increased. Such demands are big objects in advancing higher definition (increase in the number of pixels) of a light-emitting device and miniaturization of each display pixel pitch with reduction in size of the light-emitting device. An organic compound-containing layer is selectively deposited using a laser beam which passes through openings of a mask. An irradiated substrate provided with a light absorption layer and a material layer containing an organic compound and a deposition substrate provided with first electrodes are placed so as to face each other. The light absorption layer is heated by a laser beam which has passed through the openings of the mask, and the organic compound at a position overlapping with the heated region is vaporized, and accordingly the organic compound is selectively deposited over the deposition substrate. | 12-04-2008 |
| 20080308794 | Light-emitting device, electronic device, and manufacturing method of light-emitting device - The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light. | 12-18-2008 |
| 20090001879 | LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects. | 01-01-2009 |
| 20090001886 | Light-emitting element, light-emitting device, electronic device, and method for fabricating light-emitting element - Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A light-emitting element having an EL layer between a pair of electrodes is covered with a layer containing an inorganic compound and halogen atoms or a layer containing an organic compound, an inorganic compound, and halogen atoms, whereby deterioration by moisture penetration can be inhibited. Thus, a light-emitting element with a long life can be obtained. | 01-01-2009 |
| 20090011677 | Method for Manufacturing Light-Emitting Device - A method for manufacturing a light-emitting device including a layer containing different evaporation materials, by which a desired layer containing the different evaporation materials is formed easily using a plurality of evaporation materials. A light-emitting device is manufactured in such a manner that a plurality of layers each containing a different evaporation material from each other is stacked over a first substrate; a second substrate which has a first electrode is placed at a position facing the first substrate; the plurality of layers containing evaporation materials is heated to form a layer containing different evaporation materials is formed on the first electrode provided for the second substrate; and a second electrode is formed on the layer containing different evaporation materials. | 01-08-2009 |
| 20090075214 | MANUFACTURING METHOD OF LIGHT EMITTING DEVICE, AND EVAPORATION DONOR SUBSTRATE - An object is to provide a manufacturing method of a light emitting device, by which manufacturing costs in manufacturing a flat panel display can be reduced. A first substrate provided with a reflective layer having an opening over a first surface, and provided with a light absorption layer and an evaporation material over a second surface facing the first surface is used. Then, in a state where the second surface of the first substrate is disposed close to a first surface of a second substrate, light irradiation is performed from the first surface side of the first substrate. The irradiation light is absorbed by a portion of the light absorption layer overlapping with the opening in the reflective layer, thereby heating the evaporation material. The heated evaporation material is attached to the first surface of the second substrate. | 03-19-2009 |
| 20090139558 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to provide a photoelectric conversion device with an excellent photoelectric converting characteristic while effectively utilizing silicon semiconductor material. A photoelectric conversion device comprises a first electrode, a first unit cell including a single-crystal semiconductor layer which is obtained by cleaving a single crystal semiconductor substrate at a damaged layer, a second unit cell including a non-single-crystal semiconductor layer, an intermediate layer including a transition metal oxide, and a second electrode, wherein the first unit cell and second unit cell are connected in series with the intermediate layer interposed therebetween and are sandwiched between the first electrode and the second electrode. | 06-04-2009 |
| 20090165854 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - A photoelectric conversion device includes a first unit cell in which one face of a single crystal semiconductor layer is provided with a first electrode and a first impurity semiconductor layer including one conductivity type and an opposite face is provided with a second impurity semiconductor layer including a conductivity type opposite to the one conductivity type, and a second unit cell including a p-type organic semiconductor and an n-type organic semiconductor. The first unit cell and the second unit cell are connected in series with an intermediate layer interposed therebetween. The intermediate layer includes a transition metal oxide. A face of the first electrode which is opposite to the single crystal semiconductor layer is provided with an insulating layer, and the insulating layer is bonded to a supporting substrate. | 07-02-2009 |
| 20090197017 | Deposition Method and Method for Manufacturing Light-Emitting Device - A first substrate which includes a reflective layer having an opening, a light-absorbing layer, and a material layer formed in contact with the light-absorbing layer over one of surfaces is provided; the surface of the first substrate over which the material layer is formed and a deposition target surface of the second substrate are disposed to face each other; and irradiation with laser light whose repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat a part of the material layer at a position overlapping with the opening of the reflective layer and deposit the part of the material layer over the deposition target surface of the second substrate. | 08-06-2009 |
| 20090256169 | Deposition Substrate and Method for Manufacturing Light-Emitting Device - The deposition substrate of the present invention includes a light-transmitting substrate having a first region and a second region. In the first region, a first heat-insulating layer transmitting light is provided over the light-transmitting substrate, a light absorption layer is provided over the first heat-insulating layer, and a first organic compound-containing layer is provided over the light absorption layer. In the second region, a reflective layer is provided over the light-transmitting substrate, a second heat-insulating layer is provided over the reflective layer, and a second organic compound-containing layer is provided over the second heat-insulating layer. The edge of the second heat-insulating layer is placed inside the edge of the reflective layer, and there is a space between the first heat-insulating layer and the second heat-insulating layer. | 10-15-2009 |
| 20090269485 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - By irradiating a first substrate which is an evaporation donor substrate including a function layer in which films having different refractive indexes (high-refractive index films and low refractive index films) are stacked with first light (wavelength=λ | 10-29-2009 |
| 20090280589 | Method for Manufacturing Light-Emitting Device - An object is to provide a method for manufacturing a light-emitting device with high definition, high light-emitting characteristics, and the long lifetime by employing a method in which a desired evaporation pattern can be formed and an excess evaporation of a material layer which is to be the transfer layer is prevented and in which deterioration of the material or the like is hard to occur in a transfer step. This is a method for manufacturing a light-emitting device, in which irradiation with first light is performed to pattern a material layer over a first substrate which is an evaporation donor substrate and irradiation with second light is performed to evaporate the material layer patterned onto a second substrate which is a deposition target substrate. | 11-12-2009 |
| 20090297694 | Deposition Method and Method for Manufacturing Light-Emitting Device - An object is to provide a deposition method for smoothly obtaining desired pattern shapes of material layers and a method for manufacturing a light-emitting device while throughput is improved when a plurality of different material layers is stacked on a substrate. A material layer is selectively formed in advance in a position overlapped with a light absorption layer over a first substrate by pump feeding. Three kinds of light-emitting layers are deposited on one deposition substrate. This first substrate and a second substrate that is to be a deposition target substrate are arranged to face each other, and the light absorption layer is heated by being irradiated with light, whereby a film is deposited on the second substrate. Three kinds of light-emitting layers can be deposited with positional accuracy by performing only one position alignment before light irradiation. | 12-03-2009 |
| 20100035371 | Method for Fabricating Light Emitting Device - By using a first substrate which has a light-transmitting property and whose first face is provided with a light-absorbing layer, a mixture including an organic compound and an inorganic material is irradiated with light having a wavelength, which is absorbed by the inorganic material to heat the mixture, and thereby a film of the organic compound included in the mixture is formed on the first face of the first substrate. Then, the first face of the first substrate and a deposition surface of a second substrate are arranged to be adjacent to or in contact with each other, irradiation with light having a wavelength, which is absorbed by the light-absorbing layer is conducted from a second face side of the first substrate, to heat the organic compound, and thereby at least part of the organic compound is formed as a film on the deposition surface of the second substrate. | 02-11-2010 |
| 20100098879 | Method for Manufacturing Light-Emitting Device - A method for manufacturing a light-emitting device is provided, which includes a step of forming a light-absorbing layer including an unevenness portion over a first substrate, a step of forming a first organic compound layer over the light-absorbing layer, a step of providing a second substrate over the first substrate with the light-absorbing layer and the first organic compound layer interposed therebetween, and a step of irradiating the light-absorbing layer with light to deposit a second organic compound layer including a material contained in the first organic compound layer onto the second substrate. | 04-22-2010 |
| 20100151762 | Deposition Method and Manufacturing Method of Light-Emitting Device - An object is to provide a deposition method in which an organic material layer which is a material of a common layer is evenly formed over an entire surface of a donor substrate (a first substrate) and can be transferred to an element formation substrate (a second substrate) as transfer layers which are common layers for red (R), green (G), and blue (B) with different thicknesses. An organic material layer over a first absorption layer and a second absorption layer is deposited to a second substrate as a first transfer layer and a second transfer layer by sublimating the organic material layer over the first substrate. The thicknesses of the first and second transfer layers differ in accordance with the ratio of the area of the first absorption layer to the area of the second absorption layer. | 06-17-2010 |
| 20110057183 | LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE - The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light. | 03-10-2011 |
| 20110111554 | MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING MEMORY DEVICE - Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof, and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer. | 05-12-2011 |
