Patent application number | Description | Published |
20120038016 | BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE - In a back-illuminated solid-state image pickup device including a semiconductor substrate | 02-16-2012 |
20120256287 | BACK-ILLUMINATED SOLID-STATE IMAGE PICKUP DEVICE - In a back-illuminated solid-state image pickup device including a semiconductor substrate | 10-11-2012 |
20120287440 | OCT DEVICE - A photodetector of an OCT device is provided with: a silicon substrate comprised of a semiconductor of a first conductivity type, having a first principal surface and a second principal surface opposed to each other, and having a semiconductor region of a second conductivity type formed on the first principal surface side; and charge transfer electrodes provided on the first principal surface and transferring generated charges. In the silicon substrate, an accumulation layer of the first conductivity type having a higher impurity concentration than the silicon substrate is formed on the second principal surface side, and an irregular asperity is formed in a region opposed to at least the semiconductor region, in the second principal surface. The region in which the irregular asperity is formed on the second principal surface of the silicon substrate is optically exposed. | 11-15-2012 |
20130107097 | SOLID-STATE IMAGING DEVICE | 05-02-2013 |
20130112853 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device | 05-09-2013 |
20130270609 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device is provided with a plurality of photoelectric converting portions each having a photosensitive region and an electric potential gradient forming region, and which are juxtaposed so as to be along a direction intersecting with a predetermined direction, a plurality of buffer gate portions each arranged corresponding to a photoelectric converting portion and on the side of the other short side forming a planar shape of the photosensitive region, and accumulates a charge generated in the photosensitive region of the corresponding photoelectric converting portion, and a shift register which acquires charges respectively transferred from the plurality of buffer gate portions, and transfers the charges in the direction intersecting with the predetermined direction, to output the charges. The buffer gate portion has at least two gate electrodes to which predetermined electric potentials are respectively applied so as to increase potential toward the predetermined direction. | 10-17-2013 |
20130285188 | SOLID STATE IMAGING DEVICE - A solid state imaging device | 10-31-2013 |
20130292742 | SOLID STATE IMAGING DEVICE - A solid state imaging device | 11-07-2013 |
20140091421 | SOLID-STATE IMAGE PICKUP ELEMENT AND SOLID-STATE IMAGE PICKUP ELEMENT MOUNTING STRUCTURE - A solid-state image pickup element is provided with a semiconductor substrate having a photosensitive region, a plurality of first electrode pads arrayed on a principal face of the semiconductor substrate, a plurality of second electrode pads arrayed in a direction along a direction in which the plurality of first electrode pads are arrayed, on the principal face of the semiconductor substrate, and a plurality of interconnections connecting the plurality of first electrode pads and the plurality of second electrode pads in one-to-one correspondence. The plurality of interconnections connect the first and second electrode pads so that each interconnection connects the first electrode pad and the second electrode pad in a positional relation of line symmetry with respect to a center line perpendicular to the array directions of the plurality of first and second electrode pads. | 04-03-2014 |