| Patent application number | Description | Published |
|---|
| 20080245297 | Material supply apparatus - A container of a material supply apparatus is configured of a crucible and an orifice. The crucible has a cylindrical shape, a rectangular-column shape or the like, and is hollow. Heat sources such as heaters are disposed around the crucible. The orifice including an opening is provided on a side of the crucible in a material element supplying direction. The orifice includes a pipe portion that extends in the material element supplying direction. The opening is formed on a tip of the pipe portion. An opening area of the pipe portion is formed to become gradually narrower towards the material element supplying side, namely in a direction of the opening. | 10-09-2008 |
| 20090146541 | INFRARED REFLECTOR AND HEATING DEVICE HAVING THE SAME - Provided is an infrared reflector having the configuration in which a dielectric film, an Au (gold) film, and an oxide film are sequentially formed on a substrate. The infrared reflector with this configuration is used so that the oxide film would face a body to be heated. In addition, infrared light emitted from a heat source can be reflected and collected by a reflection metal of the Au film to the body to be heated. Moreover, since the dielectric film is formed on the substrate, it is possible to prevent Au from dispersing under high temperature and thus to prevent deterioration of the infrared reflector. | 06-11-2009 |
| 20090200545 | ZnO-Based Semiconductor Device - Provided is a ZnO-based semiconductor device capable of growing a flat ZnO-based semiconductor layer on an MgZnO substrate having a main surface on the lamination side oriented in a c-axis direction. ZnO-based semiconductor layers | 08-13-2009 |
| 20100040534 | RADICAL GENERATING APPARATUS AND ZNO-BASED THIN FILM - Provided are: a radical generating apparatus that increases a purity of emitted plasma atoms, prevents contamination with impurities, and is improved in controllability over ion concentration; and a ZnO-based thin film prevented from being contaminated with impurities. A high-frequency coil ( | 02-18-2010 |
| 20100090214 | OXIDE THIN FILM AND OXIDE THIN FILM DEVICE - Provided are an oxide thin film doped with an n-type impurity, and an oxide thin film device. In an oxide thin film ( | 04-15-2010 |
| 20100102309 | ZNO-Based Semiconductor Element - To solve the foregoing problems, provided is a ZnO-based semiconductor element having an entirely novel function distinct from hitherto, using a ZnO-based semiconductor and organic matter for an active role. An organic electrode | 04-29-2010 |
| 20100133470 | ZnO-BASED SUBSTRATE AND METHOD OF TREATING ZnO-BASED SUBSTRATE - Provided are a ZnO-based substrate having a surface suitable for crystal growth, and a method of manufacturing the ZnO-based substrate. The ZnO-based substrate is made in a way that almost no hydroxide groups exist on a crystal growth-side surface of a Mg | 06-03-2010 |
| 20100230671 | ZNO-BASED SEMICONDUCTOR AND ZNO-BASED SEMICONDUCTOR DEVICE - Provided are a ZnO-based semiconductor capable of alleviating the self-compensation effect and of achieving easier conversion into p-type, and a ZnO-based semiconductor device. The ZnO-based semiconductor includes a nitrogen-doped Mg | 09-16-2010 |
| 20100270533 | ZnO-BASED SEMICONDUCTOR ELEMENT - Provided is a ZnO-based semiconductor device capable of achieving easier conversion into p-type by alleviating the self-compensation effect and by preventing donor impurities from mixing in. The ZnO-based semiconductor device includes a Mg | 10-28-2010 |
| 20100323160 | ZnO-BASED THIN FILM - Provided is a ZnO-based thin film for growing a flat film when the ZnO-based thin film is formed on a substrate. In FIG. | 12-23-2010 |
| 20110033718 | ZnO THIN FILM - Provided is a ZnO-based thin film which is doped with p-type impurities and which can be used for various devices. An Mg | 02-10-2011 |
| 20110114937 | p-TYPE MgZnO-BASED THIN FILM AND SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided are: a p-type MgZnO-based thin film that functions as a p-type; and a semiconductor light emitting device that includes the p-type MgZnO-based thin film. | 05-19-2011 |
| 20110114938 | ZnO SEMICONDUCTOR ELEMENT - Provided is a ZnO-based semiconductor device in which, in the case of forming a laminate including an acceptor-doped layer made of a ZnO-based semiconductor, the properties of a film can be stabilized by preventing deterioration of the flatness of the acceptor-doped layer or a layer after the acceptor-doped layer and an increase of crystal defect in the layer, without lowering the concentration of an acceptor element. | 05-19-2011 |
