| Patent application number | Description | Published |
| 20100020838 | LASER DIODE, OPTICAL DISK DEVICE AND OPTICAL PICKUP - A laser diode capable of performing self-pulsation operation, and capable of sufficiently reducing the coherence of laser light and stably obtaining low-noise laser light is provided. A laser diode includes: a laser chip including at least one laser stripe which extends in a resonator length direction between a first end surface and a second end surface opposed to each other, in which the laser stripe includes a gain region and a saturable absorption region in the resonator length direction, and the width of the laser stripe in the saturable absorption region is larger than the width of the laser stripe in the gain region. | 01-28-2010 |
| 20100027573 | METHOD OF DRIVING A LASER DIODE - An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over. | 02-04-2010 |
| 20100220754 | METHOD OF DRIVING LASER DIODE DEVICE AND LASER DIODE EQUIPMENT - A method of driving an ultrashort pulse and ultrahigh power laser diode device having a simple composition and a simple structure is provided. In the method of driving a laser diode device, light is injected from a light injection means into a laser diode device driven by a pulse current having a value 10 or more times as large as a value of a threshold current. | 09-02-2010 |
| 20100246622 | BI-SECTION SEMICONDUCTOR LASER DEVICE, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR DRIVING THE SAME - A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion. | 09-30-2010 |
| 20110007765 | LASER DIODE DEVICE, METHOD OF DRIVING THE SAME, AND LASER DIODE APPARATUS - An ultrashort pulse and ultrahigh power laser diode device capable of outputting pulse laser light having higher peak power with a simple composition and a simple structure is provided. The laser diode device includes: a laminated structure composed of a first compound semiconductor layer containing n-type impurity, an active layer having a quantum well structure, and a second compound semiconductor layer containing p-type impurity; a first electrode electrically connected to the first compound semiconductor layer; and a second electrode electrically connected to the second compound semiconductor layer, wherein the second compound semiconductor layer is provided with an electron barrier layer having a thickness of 1.5*10 | 01-13-2011 |
| 20110103419 | OPTICAL DEVICE - The present invention provides an optical device capable of suppressing a drive current and an optical output to be varied with a passage of the time. The optical device includes: an optical element including a first end face and a second end face, and emitting light having a wavelength from 300 nm to 600 nm both inclusive at least from the second end face in the first end face and the second end face; a pedestal including a supporting substrate supporting the optical element, and a connecting terminal electrically connected to the optical element; and a sealing section including a light transmitting window in each of a portion facing the first end face and a portion facing the second end face, and sealing the optical element. | 05-05-2011 |
| 20110164632 | METHOD OF DRIVING A LASER DIODE - An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration. The laser diode can be driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over. | 07-07-2011 |