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Hiroyuki Yasuda

Hiroyuki Yasuda, Ibaraki JP

Patent application numberDescriptionPublished
20080214386Catalyst for Cyclic Carbonate Synthesis - Provided are a solid catalyst which gives a cyclic carbonate at a high yield and a high selectivity, which is stable and which may be readily separated after reaction; and a method of industrially advantageous, inexpensive and safe production of a cyclic carbonate by the use of the catalyst. The catalyst contains an inorganic solid substance having a surface modified with an ionic substance containing a Group 15 element; or contains an ionic substance containing a Group 15 element, and an inorganic solid substance. The modifying group for surface modification of an inorganic solid substance is an ionic substance containing a Group 15 element. The ionic substance containing a Group 15 element is at least one substance selected from organic phosphonium salts, organic ammonium salts, organic arsonium salts and organic antimonium salts.09-04-2008
20090012324Process for Production of Carboxylic Acid Ester or Ether Compound - Disclosed is a process for production of a carboxylic acid ester from a carboxylic acid and an olefin or production of an ether compound from an alcohol and an olefin at low cost and with high yield in an industrially advantageous manner. The process comprises the step of reacting a carboxylic acid with an olefin to yield a corresponding carboxylic acid ester or reacting an alcohol with an olefin to yield a corresponding ether compound. In the process, a catalyst comprising a combination of (i) at least one metal compound selected from an iron compound, a cobalt compound and a nickel compound and (ii) an acidic compound is used.01-08-2009
20110004010ORGANIC INORGANIC COMPOSITE MATERIAL AND UTILIZATION THEREOF - The invention has an object to obtain an organic inorganic composite material having high activity and high selectivity, and suitable as a catalyst material having small elution of an active metal from a carrier, and further to obtain an organosilicon compound suitable for the preparation of the composite material. The composite material is an organic inorganic composite material comprising an organosilicon compound having at least two groups containing reactive silicon at a molecular end, bonded to one silicon atom constituting the organosilicon compound, and an inorganic oxide material, the organosilicon compound and the inorganic oxide material being bonded to each other through a plurality of groups containing reactive silicon of the organosilicon compound. The organosilicon compound is represented by the following general formula (1) or (2). Formula (1) wherein symbols are the same as defined in claim 01-06-2011

Patent applications by Hiroyuki Yasuda, Ibaraki JP

Hiroyuki Yasuda, Tokyo JP

Patent application numberDescriptionPublished
20080316132Method of aligning antenna azimuth - There is disclosed a method of aligning an azimuth of an antenna by use of an antenna azimuth aligning instrument capable of economically and precisely aligning the azimuth in a case where a direction of a main beam of a directional antenna is matched with a counter antenna. There is provided a method of aligning the azimuth of the directional antenna by use of the antenna azimuth aligning instrument to be attached to the antenna for use in radio communication, the azimuth aligning instrument includes an aiming hole whose central axis is constituted in parallel with a main beam azimuth of the antenna and in which a diameter of an opening 12-25-2008
20090230568Adhesive Film for Semiconductor and Semiconductor Device Therewith - There is provided an adhesive film for a semiconductor, comprising a thermoplastic resin (A), an epoxy resin (B) and a curing agent (C), wherein a minimum melt viscosity of said adhesive film for a semiconductor is 0.1 Pa·s to 500 Pa·s both inclusive in a temperature range of 50° C. to 180° C. both inclusive at a temperature-rise rate of 10° C./min from room temperature and a content of volatile component is 5.0% or less.09-17-2009
20100320620ADHESIVE FILM FOR SEMICONDUCTOR AND SEMICONDUCTOR DEVICE USING THE ADHESIVE FILM - An adhesive film for a semiconductor containing an (A) ester (meth)acrylate copolymer and a (B) thermoplastic resin other than the ester (meth)acrylate copolymer, and composed so as to satisfy the following formula (1) for two hours from 10 minutes after starting measurement, in which γ represents an amount of shearing strain produced upon undergoing a shearing stress of 3000 Pa at a frequency of 1 Hz and a temperature of 175° C. on parallel plates of 20 mm in diameter, exhibits superior filling performance in surface unevenness of a substrate through an encapsulating material sealing process, despite that semiconductor chips are stacked in multiple layers in the semiconductor device and hence a wire bonding process imposes a longer thermal history.12-23-2010

Patent applications by Hiroyuki Yasuda, Tokyo JP

Hiroyuki Yasuda, Tsukuba-Shi JP

Patent application numberDescriptionPublished
20100113830METHOD FOR PRODUCING ARYLHYDROXYLAMINE - Problem To provide a method for producing an arylhydroxylamine compound efficiently and safely under mild conditions.05-06-2010

Hiroyuki Yasuda, Hitachinaka JP

Patent application numberDescriptionPublished
20090179148MASS SPECTROMETER AND MASS SPECTROMETRY METHOD - Performing an MS3 with a tandem mass spectrometer causes problems of increase in size of the device and of increase in cost. Likewise, a plural number of times MS/MS analyses are even more difficult. An electrode to create a harmonic potential is disposed in a collision cell, and fragment ions produced by the first-time collision induced dissociation are accumulated in the harmonic potential. Target ions of the subsequent stage are let out, by means of an axial resonance excitation, selectively from the accumulated ions. The ions are excited in the axial direction to have a potential exceeding the harmonic potential. Thereby, the second-time collision induced dissociation is performed by means of a potential difference provided at the subsequent stage. In addition, an operation to return the ions back to the harmonic potential enables a plural number of times MS/MS analyses to be performed.07-16-2009
20110248157MASS SPECTROMETER AND MASS SPECTROMETRY METHOD - Objects of the present invention is to provide a quadrupole mass filter that can be fabricated at low cost and has a high transmission efficiency even under a high pressure (0.5 mTorr or more), and to provide a mass spectrometer or mass spectrometry method that reduces crosstalk in a wide mass range. Now, in a mass spectrometer, an ion separating unit is configured to include quadrupole rod electrodes that form a quadrupole radio-frequency electric field, electrodes that form a quadrupole electrostatic field, and a power supply that allows the voltage of the electrodes to form a quadrupole electrostatic field to change. In a collision cell configured to perform collision induced dissociation, harmonic potentials in a plurality of stages are produced to resonance excite ions in the axial direction, so that the ions obtain kinetic energy to move in the direction of the detector. This energy allows a time period to shorten for which ions stay in the collision cell.10-13-2011

Patent applications by Hiroyuki Yasuda, Hitachinaka JP

Hiroyuki Yasuda, Saitama JP

Patent application numberDescriptionPublished
20090122859PICTURE TRANSMISSION METHOD, PICTURE TRANSMISSION METHOD PROGRAM, STORAGE MEDIUM WHICH STORES PICTURE TRANSMISSION METHOD PROGRAM, AND PICTURE TRANSMISSION APPARATUS - A picture transmission method is disclosed which involves encoding moving picture data and transmitting the encoded data. The picture transmission method includes the steps of encoding firstly the moving picture data into a moving picture stream for transmission at a predetermined data transfer rate, and encoding secondly, based on position information acquired from a transmission destination, a part of the moving picture data which constitutes a partial picture region for transmission at a higher resolution than the first encoding step.05-14-2009
20120099842EDITING APPARATUS, EDITING METHOD, PROGRAM, AND RECORDING MEDIA - An editing apparatus is disclosed. A story determination block determines a story expressed by a time function and provides a reference for selecting an image from among candidate images. An evaluation value computation block computes an evaluation value for each of the candidate images for each selection time in the story based on the story determined by the story determination block and at least one feature value indicative of a feature of each of candidate images set to each thereof. An image selection block selects an image for each selection time from among the candidate images based on the computed evaluation value. An editing processing block links selection images that are images selected by the image selection block for each selection time to each other in a time-dependent manner.04-26-2012

Hiroyuki Yasuda, Annaka JP

Patent application numberDescriptionPublished
20110275768NOVEL SILPHENYLENE SKELETON-CONTAINING SILICONE TYPE POLYMER AND METHOD FOR MANUFACTURING THE SAME - There is disclosed a silphenylene skeleton-containing silicone type polymer comprising a repeating unit represented by the following general formula (1) and having a weight average molecular weight of 5,000 to 40,000. There can be a novel silphenylene skeleton-containing silicone type polymer which enables to satisfy both chemical resistance and adhesiveness to a substrate and can be used as a material for a thermosetting resin for forming coatings for protecting substrates, circuits, and interconnections; and a method for manufacturing the same.11-10-2011

Hiroyuki Yasuda, Fukuoka JP

Patent application numberDescriptionPublished
20120100697FILM FOR SEMICONDUCTOR AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A film for semiconductor includes a support film, a second adhesive layer, a first adhesive layer and a bonding layer which are laminated together in this order. This film for semiconductor is configured so that it supports a semiconductor wafer laminated on the bonding layer thereof when the semiconductor wafer is diced and the bonding layer is selectively peeled off from the first adhesive layer when the diced semiconductor wafer (semiconductor element) is picked up. This film for semiconductor is characterized in that when the semiconductor wafer is laminated thereon and diced, and then adhesive strength of the obtained semiconductor element is measured, a ratio of “a (N/cm)” which is adhesive strength of an edge portion of the semiconductor element to “b (N/cm)” which is adhesive strength of a portion of the semiconductor element other than the edge portion thereof (that is, a/b) is in the range of 1 to 4. By optimizing the a/b, it is possible to reliably suppress defects such as breakage and crack which would be generated in the semiconductor element due to local impartation of a large load thereto when being picked up.04-26-2012