| Patent application number | Description | Published |
|---|
| 20100021097 | Rolling Device - A rolling device in which rust development or damage on a raceway surface or rolling surface is hard to occur even if water and the like intrude is provided. A self-aligning roller bearing comprises an inner ring | 01-28-2010 |
| 20110305077 | MEMORY DEVICE - Disclosed herein is a memory device, including: a memory element including a memory layer for holding therein information in accordance with a magnetization state of a magnetic material, a fixed magnetization layer which is provided on the memory layer through a non-magnetic layer and whose direction of a magnetization is fixed to a direction parallel with a film surface, and a magnetic layer which is provided on a side opposite to the fixed magnetization layer relative to the memory layer through a non-magnetic layer and whose direction of a magnetization is a direction vertical to the film surface; and a wiring through which a current is caused to flow through the memory element in a direction of lamination of the layers of the memory element. | 12-15-2011 |
| 20110310663 | METHOD FOR DRIVING STORAGE ELEMENT AND STORAGE DEVICE - Disclosed herein is a method for driving a storage element that has a plurality of magnetic layers and performs recording by utilizing spin torque magnetization reversal, the method including applying a pulse voltage having reverse polarity of polarity of a recording pulse voltage in application of the recording pulse voltage to the storage element. | 12-22-2011 |
| 20110316102 | STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes: a storage layer configured to retain information based on a magnetization state of a magnetic material and include a perpendicular magnetization layer whose magnetization direction is in a direction perpendicular to a film plane, a non-magnetic layer, and a ferromagnetic layer that has an axis of easy magnetization along a direction in the film plane and has a magnetization direction inclined to a direction perpendicular to the film plane by an angle in a range from 15 degrees to 45 degrees, the storage layer being configured by stacking of the perpendicular magnetization layer and the ferromagnetic layer with intermediary of the non-magnetic layer and magnetic coupling between the perpendicular magnetization layer and the ferromagnetic layer; a magnetization pinned layer; and a non-magnetic intermediate layer. | 12-29-2011 |
| 20110316103 | STORAGE ELEMENT, METHOD FOR MANUFACTURING STORAGE ELEMENT, AND MEMORY - Disclosed herein is a storage element, including: a storage layer configured to retain information based on a magnetization state of a magnetic material; and a magnetization pinned layer configured to be provided for the storage layer with intermediary of a tunnel barrier layer, wherein the tunnel barrier layer has a thickness not less than or equal to 0.1 nm to not more than or equal to 0.6 nm and interface roughness less than 0.5 nm, and information is stored in the storage layer through change in direction of magnetization of the storage layer by applying a current in a stacking direction and injecting a spin-polarized electron. | 12-29-2011 |
| 20110317464 | PORTABLE INFORMATION APPARATUS - The present disclosure provides a portable information apparatus, including, an apparatus main body, an incidental article mounted on the apparatus main body when the portable information apparatus is used, a solid-state magnetic memory provided at a portion of the apparatus main body at which the incidental article is mounted and adapted to retain information in accordance with a magnetization state of a magnetic material, and a magnetic shield provided on the incidental article including a portion opposed to the solid-state magnetic memory when the incidental article is mounted on the apparatus main body. | 12-29-2011 |
| 20120001281 | MAGNETIC STORAGE ELEMENT AND MAGNETIC MEMORY - Disclosed herein is a magnetic storage element including: a reference layer configured to have a magnetization direction fixed to a predetermined direction; a recording layer configured to have a magnetization direction that changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate the recording layer from the reference layer; and a heat generator configured to heat the recording layer. A material of the recording layer is such a magnetic material that magnetization at 150° C. is at least 50% of magnetization at a room temperature and magnetization at a temperature in a range from 150° C. to 200° C. is in a range from 10% to 80% of magnetization at a room temperature. | 01-05-2012 |
| 20120002466 | STORAGE APPARATUS - Disclosed herein is a storage apparatus including a cell array configured to include storage devices arranged to form an array. Each of the storage device has: a storage layer for storing information as the state of magnetization of a magnetic substance; a fixed-magnetization layer having a fixed magnetization direction; and a tunnel insulation layer sandwiched between the storage layer and the fixed-magnetization layer. In an operation to write information on the storage layer, a write current is generated to flow in the layer-stacking direction of the storage layer and the fixed-magnetization layer in order to change the direction of the magnetization of the storage layer. The cell array is divided into a plurality of cell blocks. The thermal stability of the storage layer of any particular one of the storage devices has a value peculiar to the cell block including the particular storage device. | 01-05-2012 |
| 20120032289 | MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof. | 02-09-2012 |
| 20120043631 | MAGNETIC MEMORY ELEMENT - A magnetic memory element includes a memory layer, a reference layer, and a spin-injection layer provided between the memory layer and the reference layer. The reference layer has a structure in which at least two CoPt layers containing 20 atomic % or more and 50 atomic % or less of Pt and having a thickness of 1 nm or more and 5 nm or less are stacked with a Ru layer provided therebetween. The thickness of the Ru layer is 0.45±0.05 nm or 0.9±0.1 nm. In addition, the axis of 3-fold crystal symmetry of the CoPt layers is oriented perpendicularly to the film surface. The reference layer includes a high spin polarization layer of 1.5 nm or less containing Co or Fe as a main component at an interface with the spin-injection layer. | 02-23-2012 |
| 20120056283 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face and becomes a reference for the information stored in the memory layer; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer and is formed of a non-magnetic layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure having the memory layer, the insulating layer, and the magnetization-fixed layer, and thereby the magnetization direction varies and a recording of information is performed with respect to the memory layer, and a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer. | 03-08-2012 |
| 20120056285 | MEMORY ELEMENT AND MEMORY DEVICE - There is provided a memory element including a memory layer that has magnetization perpendicular to a film face; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, the insulating layer is formed of an oxide film, and the memory layer is formed of Co—Fe—B, a concentration of B is low in the vicinity of an interface with the insulating layer, and the concentration of B increases as it recedes from the insulating layer. | 03-08-2012 |
| 20120056286 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a layered structure including a memory layer that has magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and the memory layer and the magnetization-fixed layer have a film thickness in such a manner that an interface magnetic anisotropy energy becomes larger than a diamagnetic energy. | 03-08-2012 |
| 20120057403 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a memory layer that maintains information through the magnetization state of a magnetic material, a magnetization-fixed layer with a magnetization that is a reference of information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer. The storing of the information is performed by inverting the magnetization of the memory layer by using a spin torque magnetization inversion occurring according to a current flowing in the lamination direction of a layered structure having the memory layer, the intermediate layer, and the magnetization-fixed layer, the memory layer includes an alloy region containing at least one of Fe and Co, and a magnitude of an effective diamagnetic field which the memory layer receives during magnetization inversion thereof is smaller than the saturated magnetization amount of the memory layer. | 03-08-2012 |
| 20120061779 | MEMORY ELEMENT AND MEMORY - There is provided a memory element including a magnetic layer that includes at least one kind of element selected from a group consisting of Fe, Co, and Ni, and carbon, has a content of carbon that is equal to or greater than 3 atomic % and less than 70 atomic % with respect to a total content of Fe, Co, and Ni, and has magnetic anisotropy in a direction perpendicular to a film face; and an oxide layer that is formed of an oxide having a sodium chloride structure or a spinel structure and that comes into contact with the magnetic layer. | 03-15-2012 |
| 20120061780 | STORAGE ELEMENT AND MEMORY DEVICE - Disclosed herein is a storage element, including: a storage layer which has magnetization vertical to a film surface and in which a direction of the magnetization is changed in correspondence to information; a magnetization fixing layer which has magnetization vertical to a film surface becoming a reference of the information stored in the storage layer, which is composed of plural magnetic layers, and which has a multilayered ferri-pin structure into which the plural magnetic layers are laminated one upon another through a non-magnetic layer(s); and an insulating layer made of a non-magnetic material and provided between the storage layer and the magnetization fixing layer. | 03-15-2012 |
| 20120061781 | MEMORY ELEMENT AND MEMORY - There is provided a memory element including a magnetic layer that includes Fe | 03-15-2012 |
| 20120063217 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein the memory layer has a lamination structure of a Co—Fe—B layer and an element belonging to any one of 1A group, 2A group, 3A group, 5A group, or 6A group, an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer. | 03-15-2012 |
| 20120063220 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film. | 03-15-2012 |
| 20120063221 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer. | 03-15-2012 |
| 20120063222 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and a Ta film is formed in such a manner that comes into contact with a face, which is opposite to the insulating layer side, of the magnetization-fixed layer. | 03-15-2012 |
