| Patent application number | Description | Published |
|---|
| 20080241600 | MAGNETIC RECORDING MEDIUM AND PROCESS FOR PRODUCING THE SAME - The present invention provides a magnetic recording medium wherein a fine non-magnetic inorganic powder, the dispersibility of which is improved, is used to improve the surface smoothness of a lower non-magnetic layer, thereby giving an excellent surface smoothness of an upper magnetic layer and electromagnetic conversion property; and a production process thereof. A magnetic recording medium comprising at least a non-magnetic support, a lower non-magnetic layer on one surface of the non-magnetic support, and an upper magnetic layer on the lower non-magnetic layer, wherein the upper magnetic layer contains at least a ferromagnetic powder, and a binder resin material, and the lower non-magnetic layer contains at least carbon black, iron oxide, and a binder resin material, and the iron oxide has an average major axis length of 30 to 100 nm, and a specific surface area based on the BET method of 80 to 120 m | 10-02-2008 |
| 20080241602 | MAGNETIC RECORDING MEDIUM AND PROCESS FOR PRODUCING THE SAME - The present invention provides a magnetic recording medium wherein both of a reduction in the particle diameter of a ferromagnetic powder and an increase in the filling ratio of the powder in a magnetic layer are attained and the magnetic layer is excellent in surface smoothness and electromagnetic conversion property. A magnetic recording medium comprising at least a non-magnetic support, a lower non-magnetic layer on one surface of the non-magnetic support, and an upper magnetic layer on the lower non-magnetic layer, wherein the lower non-magnetic layer contains at least carbon black, a non-magnetic inorganic powder other than carbon black, and a binder resin, the upper magnetic layer contains at least a ferromagnetic powder and a binder resin containing a polar group, and the ferromagnetic powder is a ferromagnetic metal powder having an average major axis length of 10 to 50 nm, or a hexagonal ferrite magnetic powder having an average plate diameter of 5 to 40 nm, and the polar-group-containing binder resin is contained in the upper magnetic layer in such an amount that a proportion of said polar group to unit specific surface area based on the BET method of the ferromagnetic powder is set into a range of 0.18 to 0.35 μmol/m | 10-02-2008 |
| 20080247550 | Pon System with Encryption Function and Encryption Method of Pon System - In a PON system, clocks of an optical network unit and an optical line terminal are synchronized. An optical network unit generates a new encryption key and transmits it to an optical line terminal. The optical network unit transmits a notification that includes an encryption key changing time to the optical line terminal. Finally, the optical network unit and the optical line terminal change previously held encryption keys to the new encryption key at the encryption key changing time. | 10-09-2008 |
| 20080259189 | IMAGING-DEVICE DRIVING SYSTEM - An imaging-device driving system, comprising a clock-signal generator, a smear detector, and a frequency-controller, is provided. The clock-signal generator generates a clock signal. The clock signal is used for driving an imaging device. The smear detector detects whether smear is present in an image signal. The image signal is generated by an imaging device. The frequency-controller raises the frequency of the clock signal when the smear detector detects the presence of the smear in the image signal. | 10-23-2008 |
| 20090112370 | VACUUM SYSTEM AND METHOD FOR OPERATING THE SAME - The present invention provides a vacuum system including a vacuum pump capable of operating at a rotation rate controlled appropriately when a predetermined process is performed in a vacuum chamber, which contributes to energy conservation. The vacuum system serves as a semiconductor manufacturing system comprising a vacuum pump controller which has a gas flow mode and an auto-tuning mode for determining a rotation rate of a vacuum pump unit to set the rotation rate to a target value lower by a predetermined value than the full operation rate of gas flow rate control means under the condition that pressure within the process chamber is vacuum pressure necessary for the gas flow mode. The vacuum pump controller has means for reducing the rotation rate of the vacuum pump unit from a rated rotation rate in the auto-tuning mode under the condition that pressure within the process chamber is vacuum necessary for the gas flow mode, to determine whether or not the operation rate of an APC valve reaches a target value, and means for storing, as the rotation rate necessary for the gas flow mode, the rotation rate of the vacuum pump unit, which is obtained when it is determined that the operation rate of the APC valve reaches the target value. | 04-30-2009 |
| 20090114987 | Semiconductor device and manufacturing method thereof - A semiconductor device includes a semiconductor layer with an impurity of a first conductivity type diffused therein, and a local insulating layer, source layer, and a drain layer formed therein. The drain layer has an impurity of a second conductivity type opposite to the first conductivity type. A gate electrode is formed over the semiconductor layer extending from over the local insulating layer to the source layer. A low-concentration diffusion layer is formed in the semiconductor layer below the drain layer. First and second gate insulating films are formed between the gate electrode and the semiconductor layer, and respectively extending from an end, on the source layer side, of the gate electrode to the local insulating layer without reaching the local insulating layer, and extending from an end on another side of the local insulting layer to the source layer. | 05-07-2009 |
| 20090183674 | DEVICE FOR PREVENTING WINDING-UP OF SHEET METAL IN CONTINUOUS HOT-DIPPING BATH - A system for prevention of stirred up dross in continuous hot-dip plating bath of a metal sheet characterized by placing flow regulating members partially separated from each other under a sink roll at the two side wall surfaces of a hot-dip plating bath which axial ends of the sink roll face so that said members contact the wall surfaces and thereby suppressing the flow of hot dip metal ascending or descending along the wall surfaces. | 07-23-2009 |
| 20090187857 | MOBILE TERMINAL DEVICE - When starting a small thumbnail display mode, predetermined data prioritized by a priority setting unit are sequentially output from a data storage unit to a decoder and a display processing unit to preliminarily generate large thumbnail image data. The generated large thumbnail image data are temporarily stored in a thumbnail image data storage unit so as to be efficiently displayed in the priority order after switching of the display node to the large thumbnail display mode. | 07-23-2009 |
| 20090267212 | Semiconductor Device - The invention offers technology for suppressing damage to semiconductor devices due to temperature changes. When flip-chip mounting a silicon chip on a buildup type multilayer substrate having a structure with a thinned core, a core having a small coefficient of thermal expansion is used in the multilayer substrate, and the coefficient of thermal expansion and glass transition point of the underfill are appropriately designed in accordance with the thickness and coefficient of thermal expansion of the core. By doing so, it is possible to relieve stresses inside the semiconductor package caused by deformation of the multilayer substrate due to temperature changes, and thereby to suppress damage to the semiconductor package due to temperature changes. | 10-29-2009 |
| 20100052091 | Semiconductor device and fabrication method of the same - A semiconductor device including a first conduction type semiconductor layer; a second conduction type element forming region formed above the first conduction type semiconductor layer and formed with at least one semiconductor element formed on a surface region of the second conduction type element forming region; a first conduction type element-isolation region insulating and segregating the second conduction type element forming region from the exterior; and a second conduction type buried region formed at the interface of the first conduction type semiconductor layer and the second conduction type element forming region, formed separated from the first conduction type element-isolation region. In the semiconductor device a second conduction type high concentration region is buried in the surface of the second conduction type element forming region and formed to surround the semiconductor element and separated from the first conduction type element-isolation region. | 03-04-2010 |
| 20100052804 | PULSE WIDTH MODULATION DEVICE - A pulse width modulation device in which a step form control signal generated by a control signal generating device and a triangular wave carrier signal generated by a carrier generating device are compared by a digital comparator and the comparison signal is supplied to an edge detection device. Also, a top/bottom signal generated by a top/bottom signal generating device is supplied to the edge detection device The edge detection device includes an edge detection function that generates an edge detection signal by detecting change of the comparison signal. The edge detection function is inhibited by the edge detection signal; and inhibition is cancelled by the top/bottom signal so that the edge detection signal is output. A PWM signal is output from the pulse generating device in accordance with the comparison signal, edge detection signal, and top/bottom signal. | 03-04-2010 |
| 20100149383 | IMAGER FOR PHOTOGRAPHING A SUBJECT WITH A PROPERLY SIZE - An imager is provided having an image-capturing device, a display, and a view angle controller. The image-capturing device captures a subject image and outputs an image signal. The display displays a through image consisting of multiple images continuously displayed. The view angle controller controls a view angle of an image so that a ratio of an area of a subject in an area of an image is maintained at a certain value when the display displays a through image. | 06-17-2010 |
| 20100221884 | Semiconductor device and manufacturing method thereof - A semiconductor device includes a semiconductor layer with an impurity of a first conductivity type diffused therein, and a local insulating layer, source layer, and a drain layer formed therein. The drain layer has an impurity of a second conductivity type opposite to the first conductivity type. A gate electrode is formed over the semiconductor layer extending from over the local insulating layer to the source layer. A low-concentration diffusion layer is formed in the semiconductor layer below the drain layer. First and second gate insulating films are formed between the gate electrode and the semiconductor layer, and respectively extending from an end, on the source layer side, of the gate electrode to the local insulating layer without reaching the local insulating layer, and extending from an end on another side of the local insulting layer to the source layer. | 09-02-2010 |
| 20100258938 | SUBSTRATE AND SEMICONDUCTOR DEVICE - A substrate ( | 10-14-2010 |
| 20110024172 | MULTILAYER CIRCUIT BOARD, INSULATING SHEET, AND SEMICONDUCTOR PACKAGE USING MULTILAYER CIRCUIT BOARD - Semiconductor chip mounting yield and semiconductor package reliability deteriorate due to warpage of a multilayer circuit board. A multilayer circuit board ( | 02-03-2011 |
