Patent application number | Description | Published |
20090008648 | GALLIUM NITRIDE-BASED SEMICONDUCTOR ELEMENT, OPTICAL DEVICE USING THE SAME, AND IMAGE DISPLAY APPARATUS USING OPTICAL DEVICE - A GaN-based semiconductor element which can suppress a leakage current generated during reverse bias application, an optical device using the same, and an image display apparatus using the optical device are provided. The GaN-based semiconductor element has a first GaN-based compound layer including an n-type conductive layer; a second GaN-based compound layer including a p-type conductive layer; and an active layer provided between the first GaN-based compound layer and the second GaN-based compound layer. In this GaN-based semiconductor element, the first GaN-based compound layer includes an underlayer having an n-type impurity concentration in the range of 3×10 | 01-08-2009 |
20090206325 | GAN BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING SAME - A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second GaN based compound semiconductor layer; an underlying layer composed of a GaN based compound semiconductor, the underlying layer being disposed between the first GaN based compound semiconductor layer and the active layer; and a superlattice layer composed of a GaN based compound semiconductor doped with a p-type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer. | 08-20-2009 |
20090230878 | GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT ASSEMBLY, LIGHT-EMITTING APPARATUS, METHOD OF MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF DRIVING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND IMAGE DISPLAY APPARATUS - A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the first GaN-based compound semiconductor layer, a second electrode electrically connected to the second GaN-based compound semiconductor layer, an impurity diffusion-preventing layer composed of an undoped GaN-based compound semiconductor, the impurity diffusion-preventing layer preventing a p-type impurity from diffusing into the active layer, and a laminated structure or a third GaN-based compound semiconductor layer of p-conductivity type. The impurity diffusion-preventing layer and the laminated structure or the third GaN-based compound semiconductor layer of p-conductivity type are disposed, between the active layer and the second GaN-based compound semiconductor layer, in that order from the active layer side. | 09-17-2009 |
20090242874 | GaN BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING SAME - A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second GaN based compound semiconductor layer; an underlying layer composed of a GaN based compound semiconductor, the underlying layer being disposed between the first GaN based compound semiconductor layer and the active layer; and a superlattice layer composed of a GaN based compound semiconductor doped with a p-type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer. | 10-01-2009 |
20110062457 | SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, IMAGE DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode. | 03-17-2011 |
20120092389 | LIGHT-EMITTING DEVICE AND DISPLAY DEVICE - Disclosed herein is a light-emitting device including a plurality of first light-emitting elements mounted in a matrix form on a common wiring board. Each of the first light-emitting elements has a single crystal semiconductor multilayer structure and is a semiconductor element in the form of a chip that emits light in a given band of wavelengths. When attention is focused on the plurality of first light-emitting elements that belong in a given area of all the plurality of first light-emitting elements, the orientations of the common crystal axes of the first light-emitting elements adjacent to each other at least in one of the row and column directions differ. | 04-19-2012 |
20120169786 | LIGHT EMITTING DEVICE, ILLUMINATING DEVICE, AND DISPLAY DEVICE - A light emitting device includes: one or plural light emitting elements having plural electrodes; a chip-like insulator surrounding the one or plural light emitting elements from a side surface side of the one or plural light emitting elements; and plural terminal electrodes electrically connected one-to-one with the plural electrodes, and having protrusions each protruding from a peripheral edge of the chip-like insulator. | 07-05-2012 |
20130285080 | SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, IMAGE DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode. | 10-31-2013 |
20140235037 | CRYSTAL FILM, CRYSTAL SUBSTRATE, AND SEMICONDUCTOR DEVICE - A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate ( | 08-21-2014 |