| Patent application number | Description | Published |
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| 20090242394 | AL-BASED ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF - The present invention provides an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more. | 10-01-2009 |
| 20100032186 | TRANSPARENT ELECTRODE FOR DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - The present invention relates to a transparent electrode for a display device which includes a first transparent conductive film containing nitrogen, and a second transparent conductive film not containing nitrogen, wherein the first transparent conductive film is in contact with an aluminum alloy film. In accordance with the present invention, there is obtained a transparent electrode for a display device which is capable of, even when a barrier metal layer to be generally provided between an aluminum alloy film and the transparent electrode is omitted, controlling the variance small while keeping the low contact resistance, and further which is also excellent in light transmission characteristics. | 02-11-2010 |
| 20100163877 | DISPLAY DEVICE - A display has a glass substrate provided with a transparent conducting film, thin-film transistors, and an aluminum alloy wiring film electrically connecting the thin-film transistors to the transparent conducting film. The aluminum alloy wiring film is a layered structure having a first layer (X) of an aluminum alloy comprising at least one element selected from the specific element group Q including Ni and Ag, and at least one element selected from the specific element group R including rare-earth elements and Mg in a content in the specific range, and a second layer (Y) of an aluminum alloy containing having a resistivity lower than that of the first layer (X). The first layer (X) is in direct contact with the transparent conducting film. | 07-01-2010 |
| 20100328247 | TOUCH PANEL SENSOR - Disclosed is a highly reliable touch panel sensor comprising a guiding wiring that is less likely to cause an increase in electrical resistance and disconnection with the elapse of time, has a low electrical resistance, can ensure electrical conduction to a transparent conductive film, and can be connected directly to the transparent conductive film. The touch panel sensor comprises a transparent conductive film and a guiding wiring made of an aluminum alloy film connected directly to the transparent conductive film. The aluminum alloy film comprises 0.2 to 10 atomic% in total of at least one element selected from an X group consisting of Ni and Co. The aluminum alloy film has a hardness of 2 to 15 GPa. | 12-30-2010 |
| 20110008640 | DISPLAY DEVICE, PROCESS FOR PRODUCING THE DISPLAY DEVICE, AND SPUTTERING TARGET - Disclosed is a display device comprising an aluminum alloy film. In a wiring structure of a thin-film transistor substrate for use in display devices, the aluminum alloy film can realize direct contact between a thin film of an aluminum alloy and a transparent pixel electrode, can simultaneously realize low electric resistance and heat resistance, and can improve resistance to corrosion by an amine-based peeling liquid and an alkaline developing solution used in a thin-film transistor production process. In the display device, an oxide electroconductive film is in direct contact with an Al alloy film and at least a part of the Al alloy component is precipitated on the contact surface of the Al alloy film. The Al alloy film comprises at least one element (element X1) selected from the group consisting of Ni, Ag, Zn, and Co and at least one element (element X2) which, together with the element X1, can form an intermetallic compound. An intermetallic compound, which has a maximum diameter of not more than 150 nm and is represented by at least one of X1—X2 and Al—X1—X2, is formed in the Al alloy film. | 01-13-2011 |
| 20110019350 | AL ALLOY FILM FOR DISPLAY DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET - Disclosed is an Al alloy film for a display device that, even when low-temperature heat treatment is applied, can realize satisfactorily low electric resistance, can realize a satisfactory reduction in contact resistance between the Al alloy film and a transparent pixel electrode connected directly to the Al alloy film, and has excellent corrosion resistance. The Al alloy film is connected directly to a transparent electroconductive film on the substrate in the display device. The Al alloy film comprises 0.05 to 0.5 atomic % of Co and 0.2 to 1.0 atomic % of Ge and satisfies the requirement that the content of Co and the content of Ge in the Al alloy film have a relationship represented by formula (1): [Ge]≧−0.25×[Co]+0.2 (1) In formula (1), [Ge] represents the content of Ge in the Al alloy film, atomic %; and [Co] represents the content of Co in the Al alloy film, atomic %. | 01-27-2011 |
