| Patent application number | Description | Published |
|---|
| 20100214823 | SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL HAVING CAPACITOR - A semiconductor device includes a semiconductor substrate; a memory cell array including a plurality of memory cells formed on the semiconductor substrate and arranged in a matrix in a first direction and a second direction on the surface of the semiconductor substrate; a plurality of sense amplifiers formed on the semiconductor substrate and including a first sense amplifier and a second sense amplifier; and a plurality of bit lines extending along the first direction above the memory cell array, and arranged side by side in the second direction, wherein the plurality of bit lines include a first bit line pair formed in a first wiring layer and a second bit line pair formed in a second wiring layer located above the first wiring layer. | 08-26-2010 |
| 20100304539 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes preparing a semiconductor substrate having a first region of a first electrical conduction type as a part of a surface layer of the semiconductor substrate and a first gate electrode and a capacitor structure, the first gate electrode and the capacitor structure being disposed on the first region; forming a first insulating film covering the first gate electrode and the capacitor structure, the first insulating film being covering the surface of the semiconductor substrate; implanting a first impurity of a second electrical conduction type into the semiconductor substrate, so as to form a region of the second electrical conduction type in each of a second region and a third region, the second region being a region between the first gate electrode and the capacitor structure, the third region being a region opposite to the capacitor structure with the first gate electrode therebetween. | 12-02-2010 |
| 20110101434 | SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor storage device includes: memory cells including a transistor and a capacitor; bit lines; word lines; and sense amplifiers including first and second sense amplifiers, wherein the memory cells includes: a first memory cell group sharing a first auxiliary word line; and a second memory cell group sharing a second auxiliary word line, wherein the word lines includes a first word line coupled to the first auxiliary word line and a second word line coupled to the second auxiliary word line, the first word line is coupled to the first auxiliary word line in a first word line contact region, the second word line is coupled to the second auxiliary word line in a second word line contact region, the bit lines includes first and second bit lines coupled to the first sense amplifier on both sides of the first word line contact region. | 05-05-2011 |
| Patent application number | Description | Published |
|---|
| 20090098696 | Fabrication Process of a Semiconductor Device Having a Capacitor - A method of manufacturing a semiconductor device includes forming a first trench in a capacitor device region of a semiconductor substrate, forming a capacitor insulation film over a sidewall surface of the first trench, forming a semiconductor film to cover the first trench, a resistor device region of the semiconductor substrate and a logic device region of the semiconductor substrate, introducing a first impurity element into the semiconductor film formed over the first trench, patterning the semiconductor film to form a top electrode in the capacitor device region, a resistor in the resistor device region and a gate electrode in the logic device region, annealing the semiconductor substrate, and introducing a second impurity element in the resistor. | 04-16-2009 |
| 20090184351 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate, an active region formed in the semiconductor substrate and extending in a first direction, the active region including a transistor sub-region and a capacitor sub-region, a first trench extending around the transistor sub-region, an isolation layer disposed in the first trench, a second trench extending around the capacitor sub-region, a first transistor including a first insulating layer disposed on the transistor sub-region, the first transistor including a first conductive layer disposed on the first insulating layer, and a first capacitor including a second insulating layer extending over the capacitor sub-region and a sidewall of the second trench, the first capacitor including a second conductive layer disposed on the second insulating layer, the active region having an end portion in the first direction opposite to the transistor sub-region and extending across the first capacitor. | 07-23-2009 |
| 20090215243 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming an isolation region defining an active region in a semiconductor substrate, forming a first insulating film over the semiconductor substrate, forming a second insulating film having etching properties different from those of the first insulating film over the first insulating film, selectively removing the second insulating film from a first region over the active region and the isolation region by dry etching using a fluorocarbon-based etching gas, removing a residual film formed by the dry etching over the first insulating film by exposure in an atmosphere containing oxygen, and selectively removing the first insulating film from the first region by wet etching. | 08-27-2009 |
| 20100006913 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes: a semiconductor substrate including a trench; a capacitor electrode formed in the trench; a first insulation film formed on a bottom of the trench and between the semiconductor substrate and the capacitor electrode; a second insulation film formed on a side wall of the trench and between the semiconductor substrate and the capacitor electrode; and a first metal oxide film formed at the bottom of the trench and between the capacitor electrode and the first insulation film. | 01-14-2010 |
| 20110037116 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The method of manufacturing a semiconductor device, including a first region where a transistor including a gate electrode of a stacked structure is formed, a second region where a transistor including a gate electrode of a single-layer structure is formed, and a third region positioned in a boundary part between the first region and the second region, includes: depositing a first conductive film, patterning the first conductive film in the first region and the third region so that the outer edge is positioned in the third region, depositing the second conductive film, patterning the second conductive film to form a control gate in the first region while leaving the second conductive film, covering the second region and having the inner edge positioned inner of the outer edge of the first conductive film, and patterning the second conductive film in the second region to form the gate electrode. | 02-17-2011 |
| Patent application number | Description | Published |
|---|
| 20100108453 | POWER TRANSMISSION APPARATUS - A power transmission apparatus includes a drive roller and a driven roller made of magnetic material, which are rotatable about different axes, and which are provided with a gap therebetween, a case enclosing the rollers, an input shaft and an output shaft connected coaxially with the rollers through the case, respectively, and a magnetic fluid housed in the case to fill the gap. The apparatus includes an electromagnetic coil for generating magnetism, and a magnetic path of the magnetism generated by the electromagnetic coil is formed so that a magnetic field is generated from the drive roller or the driven roller toward the driven roller or the drive roller via the gap. | 05-06-2010 |
| 20100324789 | VEHICLE DRIVING FORCE CONTROL DEVICE - A vehicle driving force control device is provided with an input shaft rotation number sensor ( | 12-23-2010 |
| 20110127133 | TWIN-CLUTCH DEVICE - A twin-clutch device that selectively transmits torque from a driving wheel to a first driven wheel and/or a second driven wheel is provided. The first and second driven wheels are arranged respectively on both sides of the driving wheel, a functional fluid that decreases its flowability as an applied stimulus is increased and that increases its flowability as the applied stimulus is reduced fills gaps between the driving wheel and the first and second driven wheels, the driving wheel includes a stimulus generating member electrically controlled to generate a stimulus, and flowability of the functional fluid between the driving wheel and one of the first and second driven wheels is decreased with an increase in stimulus applied to the functional fluid by the stimulus generating member to couple the driving wheel to the one of the first and second driven wheels, thus allowing torque transmission therebetween. | 06-02-2011 |
| Patent application number | Description | Published |
|---|
| 20090148354 | OLEFIN POLYMERIZATION REACTION UNIT AND POLYOLEFIN PRODUCTION PROCESS - An olefin polymerization reaction unit includes a multistage gas phase polymerization reactor which is divided into two or more polymerization stages, in which polyolefin particles move from an initial stage to a final stage, and in which an olefin monomer-containing gas is fed from the final stage toward the initial stage. The reaction unit also includes first circulating means for feeding to the final stage a gas that is discharged from the initial stage and then cooled with a first heat exchanger, and second circulating means for feeding to one of the polymerization stages a condensate formed by condensing, with a second heat exchanger different from the first heat exchanger, a gas removed from one of the polymerization stages. | 06-11-2009 |
| 20090149610 | OLEFIN POLYMERIZATION REACTOR, POLYOLEFIN PRODUCTION SYSTEM, AND POLYOLEFIN PRODUCTION PROCESS - An olefin polymerization reactor of the present invention includes a cylinder which extends vertically, and a decreasing diameter member which is formed on the cylinder, has an inside diameter that decreases progressively downward and has a gas inlet orifice at a bottom end thereof. A spouted bed is formed inside a reaction zone enclosed by an inside surface of the decreasing diameter member and an inside surface of the cylinder above the decreasing diameter member. | 06-11-2009 |
| 20090149611 | POWDER TRANSFER DEVICE AND POLYOLEFIN PRODUCTION PROCESS - The present invention provides a powder transfer device that has a simple construction, yet enables the powder discharge rate to be easily controlled, as well as a polyolefin powder production process using such a powder transfer device. A powder transfer device includes a downcomer which extends downward, and a gas slider situated below the downcomer. The gas slider has, on a side thereof facing an opening at a bottom end of the downcomer, a gas dispersion plate in which a plurality of gas outlets are formed. | 06-11-2009 |
| 20090149620 | SPOUTED BED DEVICE AND POLYOLEFIN PRODUCTION PROCESS USING THE SAME - A spouted bed device of the present invention includes a cylinder which extends vertically; a closing plate which closes a top end of the cylinder; a decreasing diameter member which is formed at a bottom end of the cylinder, has an inside diameter that decreases progressively downward, and has a gas inlet orifice at a bottom end thereof; and a gas discharge nozzle which passes through the cylinder from an inside surface to an outside surface thereof and which discharges gas from a treatment zone enclosed by a top surface of the decreasing diameter member, a bottom surface of the closing plate and the inside surface of the cylinder. The gas discharge nozzle is provided above a spouted bed which is formed within treatment zone. | 06-11-2009 |
| 20100069581 | SPOUTED BED DEVICE, POLYOLEFIN PRODUCTION SYSTEM WITH SPOUTED BED DEVICE, AND POLYOLEFIN PRODUCTION PROCESS - A spouted bed device according to the present invention includes a vertically extending cylinder; a decreasing diameter member which is formed on the cylinder, has an inside diameter that decreases progressively downward, and has a gas inlet orifice at a bottom end thereof; and a tubular portion which extends downward from an edge of the gas inlet orifice. A spouted bed is formed in a treatment zone enclosed by a top surface of the decreasing diameter member and an inner wall of the cylinder above the decreasing diameter member. | 03-18-2010 |
| 20110230628 | SPOUTED BED DEVICE, POLYOLEFIN PRODUCTION SYSTEM WITH SPOUTED BED DEVICE, AND POLYOLEFIN PRODUCTION PROCESS - A spouted bed device according to the present invention includes a vertically extending cylinder; a decreasing diameter member which is formed on the cylinder, has an inside diameter that decreases progressively downward, and has a gas inlet orifice at a bottom end thereof; and a tubular portion which extends downward from an edge of the gas inlet orifice. A spouted bed is formed in a treatment zone enclosed by a top surface of the decreasing diameter member and an inner wall of the cylinder above the decreasing diameter member. | 09-22-2011 |
| Patent application number | Description | Published |
|---|
| 20100304546 | SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR THIN FILM, WHICH IS SUBJECTED TO HEAT TREATMENT TO HAVE ALIGNMENT MARK, CRYSTALLIZING METHOD FOR THE SEMICONDUCTOR THIN FILM, AND CRYSTALLIZING APPARATUS FOR THE SEMICONDUCTOR THIN FILM - Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region. | 12-02-2010 |
| 20110212001 | PHASE MODULATION DEVICE, PHASE MODULATION DEVICE FABRICATION METHOD, CRYSTALLIZATION APPARATUS, AND CRYSTALLIZATION METHOD - A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting substrate and modules the phase of incident light. A light-shielding portion which shields light in the peripheral portion where the optical intensity distribution decreases of the phase modulator is formed on the laser beam incident surface or exit surface of the phase shifter, thereby shielding the peripheral light in the irradiation surface of the incident laser beam. | 09-01-2011 |
| 20110233591 | PHASE MODULATION DEVICE, PHASE MODULATION DEVICE FABRICATION METHOD, CRYSTALLIZATION APPARATUS, AND CRYSTALLIZATION METHOD - A phase shifter which modulates the phase of incident light has a light-transmitting substrate such as a glass substrate, and a phase modulator such as a concavity and convexity pattern which is formed on the laser beam incident surface of the light-transmitting substrate and modules the phase of incident light. A light-shielding portion which shields light in the peripheral portion where the optical intensity distribution decreases of the phase modulator is formed on the laser beam incident surface or exit surface of the phase shifter, thereby shielding the peripheral light in the irradiation surface of the incident laser beam. | 09-29-2011 |
| Patent application number | Description | Published |
|---|
| 20100091052 | INK FOR INKJET PRINTING - An ink for inkjet printing comprising a pigment, a water-dispersible resin, water, and a water-soluble organic solvent, wherein the water-dispersible resin is an anionic resin having a film elongation of 400-1,000%, a tensile strength of 20 to 50 N/mm | 04-15-2010 |
| 20100190922 | White ink for inkjet - A white ink for an inkjet, comprising a silica, a resin emulsion, and water, wherein an amount of the resin emulsion, reported as a mass ratio relative to a value of 1 for the silica, is within a range from 0.10 to 0.45. | 07-29-2010 |
| 20100214352 | INK FOR INKJET TEXTILE PRINTING - An ink for inkjet textile printing comprising a pigment, a water-dispersible resin, water, and a water-soluble organic solvent, wherein the water-soluble organic solvent comprises a polyol having an SP value within a range from 10 to 15.5 (cal/cm | 08-26-2010 |
| Patent application number | Description | Published |
|---|
| 20090274184 | OPTICAL UNIT - The present invention provides an optical unit capable of suppressing a thermal influence on the optical element even if a heating source such as a laser driver is disposed near the optical element. A light pickup unit | 11-05-2009 |
| 20100118237 | LIQUID CRYSTAL DISPLAY - The present invention provides a liquid crystal display device capable of preventing the occurrence of dark currents in photodiodes. Thus, the liquid crystal display device includes a liquid crystal display panel | 05-13-2010 |
| 20100171199 | PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND EXPOSURE APPARATUS - The present invention provides a production method of a semiconductor device, involving formation of a flattening layer and easy process for layers formed on a semiconductor layer, and also provides a semiconductor device preferably produced by such a production method. | 07-08-2010 |
| 20110227087 | SUBSTRATE FOR DISPLAY DEVICE, AND DISPLAY DEVICE - Disclosed is a display device substrate and a display device in which a peripheral circuit is provided in a frame region that can achieve a higher aperture ratio while suppressing the production cost. The display device substrate includes a peripheral circuit provided in a frame region, a first pixel auxiliary capacitance, and a thin film transistor. The first pixel auxiliary capacitance includes an upper electrode and a lower electrode. The peripheral circuit includes wirings. The thin film transistor includes a gate electrode. The upper electrode and the lower electrode are disposed above the gate electrode, and formed of the same material as the wirings. | 09-22-2011 |
| Patent application number | Description | Published |
|---|
| 20080289573 | CRYSTALLIZATION METHOD, CRYSTALLIZATION APPARATUS, PROCESSED SUBSTRATE, THIN FILM TRANSISTOR AND DISPLAY APPARATUS - There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film. | 11-27-2008 |
| 20090038536 | CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, DEVICE, OPTICAL MODULATION ELEMENT, AND DISPLAY APPARATUS - A first optical modulation element irradiates a non-single-crystal substance with a light beam which is to have a first light intensity distribution on the non-single crystal substance by modulating an intensity of an incident first light beam, thereby melting the substance. A second optical modulation element irradiates the substance with a light beam which is to have a second light intensity distribution on the substance by modulating an intensity of an incident second light beam, thereby melting the substance. An illumination system causes the light beam having the second light intensity distribution to enter the molten part of the substance in a period that the substance is partially molten by irradiation of the light beam having the first light intensity distribution. | 02-12-2009 |
| 20090194769 | CRYSTALLIZING METHOD, THIN-FILM TRANSISTOR MANUFACTURING METHOD, THIN-FILM TRANSISTOR, AND DISPLAY DEVICE - A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face. | 08-06-2009 |
