Patent application number | Description | Published |
20110038194 | SEMICONDUCTOR STORAGE DEVICE - According to one embodiment, a semiconductor storage device includes a plurality of parallel first interconnects extending in a first direction, a plurality of parallel second interconnects which extend in a second direction perpendicular to the first direction and which make a two-level crossing with respect to the first interconnects, and memory cell structures provided in regions where the first interconnects and the second interconnects make two-level crossings, the memory cell structures being connected on one end to the first interconnects and connected on the other end to the second interconnects, the memory cell structure including a variable resistive element and a non-ohmic element which are connected in series, wherein the endmost first interconnect is disconnected in at least one portion. | 02-17-2011 |
20110069524 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a control circuit. The control circuit applies a first voltage to a selected one of a upper interconnections, applies a second voltage to an unselected one of the upper interconnections, applies a third voltage to a first dummy upper interconnection and independently controls the first to third voltages to be set to different values. | 03-24-2011 |
20110204309 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor memory device includes a first interconnect, a second interconnect, a first fringe and a second fringe. The first interconnect is connected to a first memory cell. The second interconnect is connected to a second memory cell and is arranged at a first interval from the first interconnect in a first direction. The first fringe is formed on one end of the first interconnect. The second fringe is formed on one end of the second interconnect. The first fringe and the second fringe are arranged at the first interval in a second direction orthogonal to the first direction. | 08-25-2011 |
20110286261 | RESISTANCE CHANGE MEMORY - According to one embodiment, a resistance change memory includes a memory cell array area and a resistive element area on a substrate. A first memory cell array in the memory cell array area includes a first control line, a second control line above first control line, and a first cell unit between the first and second control lines. A second memory cell array on the first memory cell array includes the second control line, a third control line above the second control line, and a second cell unit between the second and the third control lines. And a resistive element in the resistive element area includes resistance lines, and a resistor connected to the resistance lines. The resistor includes the same member as one of a member of the cell unit and a member of a contact plug. | 11-24-2011 |
20120020158 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A memory cell array includes memory strings arranged in a first direction. Word-lines and select gate lines extend in a second direction perpendicular to the first direction. The select gate line also extends in the second direction. The word-lines have a first line width in the first direction and arranged with a first distance therebetween. The select gate line includes a first interconnection in the first direction, the first interconnection having a second line width larger than the first line width, and a second interconnection extending from an end portion of the first interconnection, the second interconnection having a third line width the same as the first line width. A first word-line adjacent to the select gate line is arranged having a second distance to the second interconnection, the second distance being (4N+1) times the first distance (N being an integer of 1 or more). | 01-26-2012 |
20120213006 | SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR STORAGE DEVICE - A semiconductor storage device according to an embodiment comprises a memory cell string in which a plurality of memory cells each having a gate are serially connected to each other. A selective transistor is connected to an end memory cell at an end of the memory cell string. A sidewall film covers a side surface of a gate of the end memory cell and a side surface of a gate of the selective transistor between the end memory cell and the selective transistor. An air gap is provided between the sidewall film of the end memory cell and the sidewall film of the selective transistor, | 08-23-2012 |
Patent application number | Description | Published |
20090173981 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor storage device has a first laminated portion including first insulating layers and first conductive layers laminated alternately, and a second laminated portion provided on an upper surface of the first laminated portion and including a second conductive layer formed between second insulating layers. The first laminated portion has a first semiconductor layer formed so as to contact with a gate insulating film and extend in a laminated direction. The second laminated portion has a second semiconductor layer formed so as to contact with a third insulating layer and the first semiconductor layer and extend in the laminated direction. The first semiconductor layer is of a first conductive type, and a portion of the second semiconductor layer which contacts with the side surface of the second conductive layer is of a second conductive type. | 07-09-2009 |
20100052017 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor memory device includes a first block having first memory cells and first select transistors, a second block having second memory cells and second select transistors, and arranged adjacent to the first block in a first direction, the second select transistor being arranged to face the first select transistor and commonly having a diffusion region with the first select transistor, a first interconnection layer provided on the diffusion region between the first and second blocks and extending in a second direction, and a second interconnection layer having a first portion provided in contact with an upper portion of the first interconnection layer and extending to a portion outside the first interconnection layer, and a second portion extending in the second direction and connected to the first portion in a portion outside a portion on the first interconnection layer. | 03-04-2010 |
20100052030 | NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory of an aspect of the present invention including a plurality of first active areas which are provided in the memory cell array side-by-side in a first direction and which have a dimension smaller than a fabrication limit dimension obtained by lithography, a second active area provided between the first active areas adjacent in the first direction, a memory cell unit which is provided in each of the plurality of first active areas and which has memory cells and select transistors, and a linear contact which is connected to one end of the memory cell unit and which extends in the first direction, wherein an area in which the linear contact is provided is one semiconductor area to which the plurality of first active areas are connected by the plurality of second active areas, and the bottom surface of the linear contact is planar. | 03-04-2010 |
20100155813 | SEMICONDUCTOR MEMORY DEVICE HAVING STACK GATE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor memory device includes select transistors, cell transistors, and cell units. The select transistors formed on a substrate and include first electrodes. The cell transistors include second electrodes with a charge storage layer and a control. The cell units including a plurality of the cell transistors connected together in series between the two select transistors. A distance between the first electrodes and a distance between the first electrodes which is adjacent to the second electrodes and adjacent second electrodes are each at least double a distance between second electrodes. A surface of the substrate between second electrodes is flush with the surface of the substrate between the first electrode and the adjacent second electrodes. The surface of the substrate between the first electrodes is positioned lower than the surface of the substrate between the first electrodes and the second electrodes. | 06-24-2010 |
20100202208 | SEMICONDUCTOR DEVICE INCLUDING CONTACT PLUG HAVING AN ELLIPTICAL SECTIONAL SHAPE - A semiconductor device includes a first MOS transistor, second MOS transistors, first contact plugs, and a second contact plug. The first MOS transistor with a first conductivity is formed on a semiconductor substrate. The second MOS transistors with a second conductivity are formed on the semiconductor substrate. The first contact plugs has a circular planar shape. The second contact plug has an elliptical planar shape and is formed on a source or a drain in one of the second MOS transistors. The first contact plugs are formed on sources or drains in the remaining second MOS transistors and the first MOS transistor. | 08-12-2010 |
20110250744 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor memory device includes a first block having first memory cells and first select transistors, a second block having second memory cells and second select transistors, and arranged adjacent to the first block in a first direction, the second select transistor being arranged to face the first select transistor and commonly having a diffusion region with the first select transistor, a first interconnection layer provided on the diffusion region between the first and second blocks and extending in a second direction, and a second interconnection layer having a first portion provided in contact with an upper portion of the first interconnection layer and extending to a portion outside the first interconnection layer, and a second portion extending in the second direction and connected to the first portion in a portion outside a portion on the first interconnection layer. | 10-13-2011 |
Patent application number | Description | Published |
20090267131 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - To reduce capacitance between each adjacent two word lines in a semiconductor memory device, a first insulating film is formed, with a first gate insulating film thereunder, in an interstice between gates respectively of each adjacent two memory transistors, and in an interstice between a gate of a selective transistor and a gate of a memory transistor adjacent thereto. Additionally, a second insulating film is formed on the first insulating film, sides of the gate of each memory transistor, and a side, facing the memory transistor, of the gate of the selective transistor. A third insulating film is formed parallel to a semiconductor substrate so as to cover a metal silicide film, the first and second insulating films and fourth and fifth insulating films. A void part is provided in the interstice between each adjacent two gates of the memory transistors, and in the interstice between the gate of the selective transistor and the gate of the memory transistor adjacent thereto. A bottom and two sides of each void part are shielded by the second insulating film, and a top of each void part is shielded by the third insulating film. | 10-29-2009 |
20110287624 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - To reduce capacitance between each adjacent two word lines in a semiconductor memory device, a first insulating film is formed, with a first gate insulating film thereunder, in an interstice between gates respectively of each adjacent two memory transistors, and in an interstice between a gate of a selective transistor and a gate of a memory transistor adjacent thereto. Additionally, a second insulating film is formed on the first insulating film, sides of the gate of each memory transistor, and a side, facing the memory transistor, of the gate of the selective transistor. A third insulating film is formed parallel to a semiconductor substrate so as to cover a metal silicide film, the first and second insulating films and fourth and fifth insulating films. Avoid part is provided in the interstice between each adjacent two gates of the memory transistors, and in the interstice between the gate of the selective transistor and the gate of the memory transistor adjacent thereto. A bottom and two sides of each void part are shielded by the second insulating film, and a top of each void part is shielded by the third insulating film. | 11-24-2011 |
Patent application number | Description | Published |
20110233505 | NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - According to the nonvolatile memory device in one embodiment, contact plugs connect between second wires and third wires in a memory layer and a first wire connected to a control element. Drawn wire portions connect the second wires and the third wires with the contact plug. The drawn wire portion connected to the second wires and the third wires of the memory layer is formed of a wire with a critical dimension same as the second wires and the third wires and is in contact with the contact plug on an upper surface and both side surfaces of the drawn wire portion. | 09-29-2011 |
20120126303 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a part of a buried insulating film buried in a trench is removed; accordingly, an air gap is formed between adjacent floating gate electrodes in a word line direction, and the air gap is formed continuously along the trench in a manner of sinking below a control gate electrode. | 05-24-2012 |
20120126306 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a memory cell includes a charge storage layer. A first air gap is provided between charge storage layers adjacent in a word line direction. A second air gap is provided between charge storage layers adjacent in a bit line direction. | 05-24-2012 |
20130285255 | NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - According to the nonvolatile memory device in one embodiment, contact plugs connect between second wires and third wires in a memory layer and a first wire connected to a control element. Drawn wire portions connect the second wires and the third wires with the contact plug. The drawn wire portion connected to the second wires and the third wires of the memory layer is formed of a wire with a critical dimension same as the second wires and the third wires and is in contact with the contact plug on an upper surface and both side surfaces of the drawn wire portion. | 10-31-2013 |