| Patent application number | Description | Published |
|---|
| 20080245387 | METHOD FOR CLEANING ELEMENTS IN VACUUM CHAMBER AND APPARATUS FOR PROCESSING SUBSTRATES - To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere. | 10-09-2008 |
| 20080245388 | METHOD FOR CLEANING ELEMENTS IN VACUUM CHAMBER AND APPARATUS FOR PROCESSING SUBSTRATES - To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere. | 10-09-2008 |
| 20080245389 | METHOD FOR CLEANING ELEMENTS IN VACUUM CHAMBER AND APPARATUS FOR PROCESSING SUBSTRATES - To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere. | 10-09-2008 |
| 20090053835 | VACUUM APPARATUS INCLUDING A PARTICLE MONITORING UNIT, PARTICLE MONITORING METHOD AND PROGRAM, AND WINDOW MEMBER FOR USE IN THE PARTICLE MONITORING - A semiconductor manufacturing apparatus includes a processing chamber for performing a manufacturing processing on a wafer. A gas supply line for introducing a purge gas is connected to an upper portion of the processing chamber, a valve being installed on the gas supply line. A rough pumping line with a valve is connected to a lower portion of the processing chamber. Installed on the rough pumping line are a dry pump for exhausting a gas in the processing chamber and a particle monitoring unit for monitoring particles between the valve and the dry pump. In the semiconductor manufacturing apparatus, after the valve is opened, the purge gas is supplied to apply physical vibration due to shock wave in the processing chamber so that deposits are detached therefrom to be monitored as particles. | 02-26-2009 |
| 20090134121 | PLASMA PROCESSING APPARATUS AND METHOD - There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma. | 05-28-2009 |
| 20090242133 | ELECTRODE STRUCTURE AND SUBSTRATE PROCESSING APPARATUS - An electrode structure capable of adequately increasing an electron density in a processing space at a part facing a circumferential edge portion of a substrate. In a processing chamber of a substrate processing apparatus that performs RIE processing on a wafer, an upper electrode of the electrode structure is disposed to face the wafer placed on a susceptor inside the processing chamber. The upper electrode includes an inner electrode facing a central portion of the wafer and an outer electrode facing the circumferential edge portion of the wafer. The inner and outer electrodes are connected with first and second DC power sources, respectively. The outer electrode has its first secondary electron emission surface extending parallel to the wafer and its second secondary electron emission surface obliquely extending relative to the first secondary electron emission surface. | 10-01-2009 |
| 20090246406 | PLASMA PROCESSING APPARATUS, CHAMBER INTERNAL PART, AND METHOD OF DETECTING LONGEVITY OF CHAMBER INTERNAL PART - A plasma processing apparatus that can accurately detect the longevity of a chamber internal part to eliminate the waste of the replacement of the chamber internal part that has not reached its end of longevity and prevent the occurrence of troubles caused by continuously using the chamber internal part that has reached its end of longevity. In the chamber internal part, at least one longevity detecting elemental layer comprised of an element different from a constituent material of the chamber internal part is buried. | 10-01-2009 |
| 20090299652 | METHOD OF PRESUMING INTERIOR SITUATION OF PROCESS CHAMBER AND STORAGE MEDIUM - A method of presuming interior situation of process chamber that makes it possible to accurately presume the interior situation of a process chamber using the number of particles discharged from the interior of the process chamber. Characteristic values associated with respective particle removing modes of a particle removing sequence are extracted from time-series data on the number of particles discharged from the interior of the process chamber in which a substrate is accommodated and subjected to predetermined processing and to which the particle removing sequence is applied, and the relationship between the extracted characteristic values and the interior situation of the process chamber is calculated. The interior situation of the process chamber is presumed based on the calculated relationship and the characteristic values in new time-series data on the number of particles. | 12-03-2009 |
| 20090301516 | SUBSTRATE TRANSFER DEVICE AND CLEANING METHOD THEREOF AND SUBSTRATE PROCESSING SYSTEM AND CLEANING METHOD THEREOF - A substrate transfer device includes an accommodating chamber for accommodating a substrate; a substrate transfer unit installed in the accommodating chamber for transferring the substrate; a gas exhaust unit for exhausting the accommodating chamber; and a gas introducing unit for introducing a gas into the accommodating chamber. The substrate transfer unit has a mounting subunit for mounting the substrate thereon, an arm subunit one end of which is connected to the mounting subunit to move the mounting subunit, and an electrode installed in the mounting subunit to which a voltage is applied, and a high voltage is applied to the electrode while the gas is being introduced into the accommodating chamber and the accommodating chamber is being exhausted. | 12-10-2009 |
| 20100154995 | SUBSTRATE PROCESSING APPARATUS, PROGRAM FOR PERFORMING OPERATION AND CONTROL METHOD THEREOF, AND COMPUTER READABLE STORAGE MEDIUM STORING THE PROGRAM - A computer readable storage medium storing a program for performing an operation method of a substrate processing apparatus is provided. The operation method includes the steps of introducing a nonreactive gas into the vacuum preparation chamber before the gate valve is opened while the substrate is transferred between the vacuum preparation chamber of the vacuum processing unit and the transfer unit, stopping introducing the nonreactive gas when an inner pressure of the vacuum preparation chamber becomes same as an atmospheric pressure, starting an evacuation process of the corrosive gas in the vacuum preparation chamber and then opening to atmosphere performed by letting the vacuum preparation chamber communicate with an atmosphere, and opening the gate valve after the step of opening to atmosphere. | 06-24-2010 |
| 20100307687 | INTERNAL MEMBER OF A PLASMA PROCESSING VESSEL - An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin. | 12-09-2010 |
| 20110126853 | CLEANING METHOD OF PROCESSING APPARATUS, PROGRAM FOR PERFORMING THE METHOD, AND STORAGE MEDIUM FOR STORING THE PROGRAM - A plasma processing apparatus includes a processing chamber, in which a wafer W is plasma-processed, and a CPU controlling an operation of each component. A processing gas is introduced into the processing chamber under a first condition defined by a flow rate and a molecular weight of the processing gas, specifically based on a magnitude of a product A | 06-02-2011 |
