Patent application number | Description | Published |
20090056877 | Plasma processing apparatus - A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode. | 03-05-2009 |
20090078201 | VERTICAL PLASMA PROCESSING APPARATUS FOR SEMICONDUCTOR PROCESS - A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field. | 03-26-2009 |
20090145890 | Treatment apparatus, treatment method, and storage medium - A treatment apparatus uses an inductive heating method to allow an object to be heated while preventing a treatment chamber from being heated. The treatment apparatus for performing a heat treatment on the object has a treatment chamber and an induction heating coil section. The treatment chamber is capable of accommodating a plurality of objects. The induction heating coil section is wound around an outer circumference of the treatment chamber. The treatment apparatus also has a high frequency power supply and a gas supply unit. The high frequency power supply applies high frequency power to the induction heating coil section. The gas supply unit introduces a necessary gas to the treatment chamber. A holding unit is inserted in and removed from the treatment chamber under the condition that the holding unit holds the object and an induction heating generator adapted to be inductively heated by means of a high frequency wave emitted by the induction heating coil section. | 06-11-2009 |
20090184109 | Processing apparatus and process method - A processing apparatus subjects an object to be processed W to a heat process. The processing apparatus comprises: a processing vessel | 07-23-2009 |
20100186898 | PLASMA PROCESSING APPARATUS - A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field and confining a plasma generation area airtightly communicating with the process field, an ICP electrode disposed outside the plasma generation box and extending in a longitudinal direction of the plasma generation box, and an RF power supply connected to the ICP electrode. The ICP electrode includes a separated portion separated from a wall surface of the plasma generation box by a predetermined distance. | 07-29-2010 |
20120103525 | PLASMA PROCESSING APPARATUS - A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode. | 05-03-2012 |
20120249992 | SUBSTRATE TRANSFER APPARATUS AND SUBSTRATE TRANSFER METHOD - A substrate transfer apparatus includes: a transfer base; a plate-like holding member which is configured to hold a substrate and which is horizontally movable back and forth with respect to the transfer base; a piezoelectric body mounted to the holding member and which, when a voltage is applied thereto, contracts or elongates to apply a bending stress to the holding member; and a power supply configured to apply a voltage to the piezoelectric body so as to apply a bending stress, which counteracts deflection that has occurred in the holding member, is applied to the holding member. | 10-04-2012 |
20120251967 | LOADING UNIT AND PROCESSING SYSTEM - A loading unit is provided under a processing unit for performing a thermal treatment process on a substrate, loads/unloads a substrate holding mechanism by which substrates are held to the processing unit, and transfers the substrates to the substrate holding mechanism. The loading unit includes a loading case provided to be connected to the processing unit and surrounds the entire processing unit; an elevator mechanism that has a holding arm for holding a lower portion of the substrate holding mechanism and moves up/down the substrate holding mechanism; a substrate transfer mechanism which transfers the substrates to the substrate holding mechanism; and a substrate holding mechanism accommodating recess portion provided in a lower portion of the loading case corresponding to the lower portion of the substrate holding mechanism and is provided to protrude downward to accommodate a lower end portion of the substrate holding mechanism. | 10-04-2012 |
20120258414 | SUBSTRATE SUPPORT INSTRUMENT, AND VERTICAL HEAT TREATMENT APPARATUS AND DRIVING METHOD THEREOF - A substrate support instrument includes a first support instrument portion and a second support instrument portion detachably combined with each other. Each of the first support instrument portion and second support instrument portion includes: a ceiling plate and a bottom plate facing each other upward and downward; a support pillar disposed in plurality along a peripheral edge portion of each of the ceiling plate and bottom plate, and configured to connect the ceiling plate and the bottom plate; and a support part disposed at a position corresponding to each of the support pillars, and configured to support a bottom of each substrate. In the support part, a height position is set such that a substrate supported in the first support instrument portion and a substrate supported in the second support instrument portion are alternately arranged, when the first support instrument portion is combined with the second support instrument portion. | 10-11-2012 |
20120263888 | FILM FORMATION APPARATUS FOR SEMICONDUCTOR PROCESS AND METHOD FOR USING THE SAME - A method is provided for using a film formation apparatus including a process container having an inner surface, which contains as a main component a material selected from the group consisting of quartz and silicon carbide. The method includes performing a film formation process to form a silicon nitride film on a product target substrate inside the process container, and then, unloading the product target substrate from the process container. Thereafter, the method includes supplying an oxidizing gas into the process container with no product target substrate accommodated therein, thereby performing an oxidation process to change by-product films deposited on the inner surface of the process container into a composition richer in oxygen than nitrogen, at a part of the by-product films from a surface thereof to a predetermined depth. | 10-18-2012 |
20130034820 | HEAT TREATMENT APPARATUS - A heat treatment apparatus for performing heat treatment of processing objects at a time without changing the interior configuration of a conventional clean room even when the processing objects are large-sized. The heat treatment apparatus is installed in a clean room. The heat treatment apparatus includes: a heat treatment furnace including a vertical processing chamber having a furnace opening at the top and adapted to house and heat-treat processing objects, a heat insulator that surrounds the circumference of the processing chamber, and a heater provided on the inner peripheral surface of the heat insulator; a lid for closing the furnace opening of the processing chamber; and a holding tool, hung via a heat-retaining cylinder from the lid, for holding the processing objects in multiple stages. The heat treatment furnace of the heat treatment apparatus, for the most part in the height direction, lies beneath the floor of the clean room. | 02-07-2013 |