Patent application number | Description | Published |
20080216959 | PLASMA PROCESSING APPARATUS - The present invention provides a plasma processing apparatus which has the function of removing a deposit adhering to the periphery of the backside of a sample and has high throughput and low cost. That is, a deposit removal unit for removing the deposit on the periphery of the backside of the sample by pulsed laser irradiation is connected to an atmosphere-side transfer chamber of the plasma processing apparatus. | 09-11-2008 |
20080223522 | PLASMA PROCESSING APPARATUS - The present invention provides a plasma processing chamber mounted with a function capable of determining the state of a temperature rise in a processing chamber even if a thermometer is not mounted in the processing chamber. In a plasma processing apparatus including: a processing chamber for subjecting a sample to be processed to plasma processing; means for supplying the processing chamber with gas; exhaust means for reducing pressure in the processing chamber; a high-frequency power source for generating plasma; and an electrode on which the sample to be processed is placed, there is provided a plasma emission monitor for determining an end point of temperature raise discharge and means for determining an end point of temperature raise discharge, both of which are used for determining an end point of temperature raise discharge performed before the plasma processing. | 09-18-2008 |
20080236748 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus including a processing chamber, a high-frequency power supply needed for plasma production, a unit that feeds a gas to the processing chamber, a shower plate, an exhausting unit that depressurizes the processing chamber, a stage on which a sample to be processed is placed, and a focus ring, the temperature of the focus ring can be regulated. A unit that measures a gas temperature distribution in the processing chamber is included. Based on the result of measurement of the gas temperature distribution, the temperature of the focus ring is controlled so that the gas temperature in the surface of the sample to be processed will be uniform. | 10-02-2008 |
20080277061 | WAFER EDGE CLEANER - An object of the present invention is to provide a wafer edge cleaner which is capable of removing an undesired material that adheres to an outer periphery of an object to be processed at the low costs and with high throughput. The wafer edge cleaner according to the present invention irradiates a deposited material that has adhered to the rear surface outer periphery of the object to be processed with a laser beam that is at least 30 kW/mm | 11-13-2008 |
20090060702 | METHOD FOR TRANSPORTING OBJECT TO BE PROCESSED IN SEMICONDUCTOR MANUFACTURING APPARATUS - In a semiconductor manufacturing apparatus including a processing chamber, means for supplying gas to the processing chamber, evacuating means for decompressing the processing chamber, a transport chamber, means for supplying gas to the transport chamber, and evacuating means for decompressing the transport chamber, the pressure in the processing chamber is 10 to 50 Pa, the pressure in the transport chamber is set to positive pressure to the processing chamber, the differential pressure between the processing chamber and the transport chamber is 10 Pa or less, and the flow rate of the gas supplied to the processing chamber is twice or more the flow rate of gas supplied to the transport chamber. | 03-05-2009 |
20090183683 | Plasma Processing Apparatus and Method for Venting the Same to Atmosphere - In a plasma processing apparatus provided with control means, gas supply means includes a first gas supply path for supplying a vent gas into a processing chamber by way of a shower plate and a second gas supply path for supplying a vent gas into the processing chamber without via the shower plate, and the control means is capable of adjusting a flow rate of the vent gas of at least one of the first and second gas supply paths in such a manner that a pressure on a back side of the shower plate becomes a pressure that is a positive pressure relative to a pressure in the processing chamber and less than a withstand pressure of the shower plate. | 07-23-2009 |
20090250000 | VACUUM PROCESSING APPARATUS - A vacuum processing apparatus capable of attaining compatibility between the decrease for the number of foreign particles deposited on a sample in a lock chamber and improvement of the throughput, in which an open speed controllable valve is disposed and the depressurization speed can be controlled automatically by a controlling computer. | 10-08-2009 |
20090294060 | Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination - A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed. | 12-03-2009 |
20090301392 | VACUUM PROCESSING APPARATUS - There is a vacuum processing apparatus which can reduce the amount of foreign particle occurrence by enhancing the ease of maintenance of a gas diffuser installing portion in the vacuum processing apparatus. A gas diffuser chamber for accommodating a gas diffuser is installed in the vacuum processing apparatus. | 12-10-2009 |
20100163181 | VACUUM PROCESSING APPARATUS - There is provided a vacuum processing apparatus including a valve whose opening degree can be set to any size and a control computer which automatically controls a depressurizing rate. The vacuum processing apparatus can reduce the number of foreign particles adhered to a sample to be processed in the lock chamber and can improve the throughput at the same time. | 07-01-2010 |
20100192857 | VACUUM PROCESSING APPARATUS - A vacuum processing apparatus includes a member having a gas passage formed in a center between the pressure adjusting valve of an exhaust system and a turbo-molecular pump, and a particle dispersion prevention unit having plural stationary blades formed to be tilted in a direction opposite the direction of the rotary blade of the turbo-molecular pump on the outer circumference of the member. | 08-05-2010 |
20100285670 | PLASMA PROCESSING APPARATUS INCLUDING ETCHING PROCESSING APPARATUS AND ASHING PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING PLASMA PROCESSING APPARATUS - A diameter of a mounting unit of the stage of an asking processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item. | 11-11-2010 |
20110100555 | Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination - A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed. | 05-05-2011 |
20110120647 | PLASMA PROCESSING APPARATUS INCLUDING ETCHING PROCESSING APPARATUS AND ASHING PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING PLASMA PROCESSING APPARATUS - A diameter of a mounting unit of the stage of an asking processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item. | 05-26-2011 |
20110146908 | PLASMA PROCESSING APPARATUS AND FOREIGN PARTICLE DETECTING METHOD THEREFOR - The present invention provides a plasma processing apparatus including: a processing chamber; a gas exhaust unit for reducing the pressure of the inside of the processing chamber through a gas exhaust line; and a laser light source for allowing laser light to transmit through an exhaust gas flowing in the gas exhaust line; an I-CCD camera for detecting scattered light caused by foreign particles passing in the laser light; and a foreign particle determination and detection unit for detecting the foreign particles from an image measured by the I-CCD camera, wherein the foreign particle determination and detection unit determines that the foreign particles are detected from the measured image when plural pixels with signals having a predetermined intensity or larger are connected in a substantially straight line. | 06-23-2011 |
20110194924 | METHOD FOR TRANSPORTING OBJECT TO BE PROCESSED IN SEMICONDUCTOR MANUFACTURING APPARATUS - In a semiconductor manufacturing apparatus including a processing chamber, means for supplying gas to the processing chamber, evacuating means for decompressing the processing chamber, a transport chamber, means for supplying gas to the transport chamber, and evacuating means for decompressing the transport chamber, the pressure in the processing chamber is 10 to 50 Pa, the pressure in the transport chamber is set to positive pressure to the processing chamber, the differential pressure between the processing chamber and the transport chamber is 10 Pa or less, and the flow rate of the gas supplied to the processing chamber is twice or more the flow rate of gas supplied to the transport chamber. | 08-11-2011 |
20110253672 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - The present invention is intended to improve the uniformity in a distribution function of incident ion energy inside a wafer surface, and realize uniform plasma processing (etching or the like) inside the wafer surface. In a plasma processing apparatus, a bias application portion of a placement electrode on which a wafer is placed is divided into an inner electrode and an outer electrode at positions near the center of the wafer and the edge thereof. Each of a first bias power and a second bias power to be used to accelerate ions incident on the wafer is bifurcated, and the resultant bias powers are fed to the inner electrode and outer electrode using a power distributor by adjusting the power ratio. | 10-20-2011 |
20120003837 | Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination - A plasma processing method of subjecting a substance to plasma processing by using a semiconductor device manufacturing apparatus including a process chamber, a unit for supplying gas to the process chamber, an exhausting unit to reduce pressure in the process chamber, a high frequency power source for plasma generation, a coil for generating a magnetic field, and a mounted electrode for mounting the substance to be processed. The method includes steps of subjecting the substance to a predetermined plasma processing, changing the magnetic field distribution, so as to make a plasma distribution of the process chamber with respect to the surface of the substance to be processed, in a convex form, at a time of igniting the plasma and after completion of the predetermined plasma processing, as compared with a plasma distribution with respect to the surface of the substance to be processed during the predetermined plasma processing. | 01-05-2012 |
20120132368 | PLASMA TREATMENT APPARATUS - To improve durability of an electric discharge part of a dielectric barrier discharge system, a plasma treatment apparatus is configured so that a plasma source of a corona discharge system is installed in the vicinity of a plasma source of the dielectric barrier discharge system, a plasma generated by corona discharge is used as an auxiliary plasma, and a discharge sustaining voltage of a main plasma generated by the dielectric barrier discharge is reduced. | 05-31-2012 |
20120211163 | PLASMA PROCESSING APPARATUS INCLUDING ETCHING PROCESSING APPARATUS AND ASHING PROCESSING APPARATUS AND PLASMA PROCESSING METHOD USING PLASMA PROCESSING APPARATUS - A diameter of a mounting unit of the stage of an ashing processing apparatus is less than a diameter of a mounting unit of the stage of an etching processing apparatus, and the diameter of the mounting unit of the stage of the etching processing apparatus is less than a diameter of an objective item. | 08-23-2012 |
20120241284 | Plasma Sterilization and Cleaning Treatment Device for Escalator, and Escalator Using the Same - Sterilization and cleaning of an escalator hand rail are performed. A sterilization and cleaning device including a hand rail; a plasma source for irradiating the hand rails with ions or radicals or UV light; an enclosure for housing the plasma source; a power source for generating plasma; a fan for generating relatively negative pressure in the enclosure; filter units for removing removed bacteria, viruses, and organic matters such as hand marks; and filter plates located backward and forward of a moving direction of the hand rail in the enclosure along the hand rail is provided. | 09-27-2012 |
20120263628 | Plasma Sterilization Apparatus - In order to provide a plasma sterilization apparatus with high plasma generation efficiency, the apparatus includes first and second electrodes ( | 10-18-2012 |
20120291706 | Atmospheric Pressure Plasma Processing Apparatus - In a plasma source of a plasma processing apparatus, the plasma source being of the dielectric barrier discharge mode of an surface discharge type, incorporating electrodes in pairs (an antenna, and a ground) areally formed inside a dielectric, a subject under-processing is kept substantially in contact with the plasma source, thereby causing a plasma to be generated on a plane on a side of the subject under-processing, opposite from a plane on which the plasma source is provided. | 11-22-2012 |
20120325146 | Plasma Processing Apparatus - Disclosed is a plasma processing apparatus which performs plasma processing under substantially atmospheric pressure to a non-planar subject to be processed. In the plasma processing apparatus, a pair of conductive wires are disposed at an interval of 1 mm or less on a dielectric board that conforms with the shape of the subject, the conductive wires are covered with a dielectric thin film having a thickness of 1 mm or less by, for instance, thermally spraying a dielectric material over the conductive wires, and plasma is generated along the shape of subject by applying high-frequency power to the pair of conductive wires. | 12-27-2012 |
20130333617 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus is provided in which film formation to a part other than a process target is suppressed, and a film formation process to the process target can be uniformly performed. The plasma processing apparatus includes a high-frequency power supply for plasma generation, a surface discharge type discharge electrode including two kinds of electrodes in one dielectric surface of a dielectric layer. The process target is brought into close contact with a discharge-surface-side surface of the discharge electrode, and a plasma is generated in a vicinity of a front surface of the process target. When a height of a surface of the dielectric layer just above the electrode is H2, and a height of a surface of the dielectric layer between the electrode and the electrode is H1, H1>H2 is established. | 12-19-2013 |