| Patent application number | Description | Published |
|---|
| 20090184350 | Non-volatile semiconductor memory device - A non-volatile semiconductor memory device having a memory cell in which operating potentials are few and the scale of the peripheral circuitry is reduced includes a select transistor having a source/drain on both sides of a channel of a semiconductor substrate and having a gate electrode disposed on the channel via a thick gate insulating film; an element isolation region formed on the semiconductor substrate in an area adjacent to the select transistor; an antifuse adjacent to the element isolation region, having a lower electrode formed on the semiconductor substrate and having an upper electrode disposed on the semiconductor substrate in an area between the element isolation region and lower electrode via a thin gate insulating film; and a connection contact electrically connecting the source and upper electrode and contacting the source and the upper electrode. | 07-23-2009 |
| 20090285036 | Fuse data read circuit having control circuit between fuse and current mirror circuit - A fuse data read circuit includes a fuse data holding unit which holds fuse data, a fuse data read unit which detects fuse data, and a bias voltage generating circuit which generates a bias voltage. The fuse data read unit includes a current mirror circuit and a control circuit provided between the current mirror circuit and the fuse data holding unit. The bias voltage generating circuit applies the bias voltage to the control circuit. | 11-19-2009 |
| 20100007368 | Semiconductor integrated circuit and method of testing the same - Provided is a semiconductor integrated circuit including: a first path that includes a first logic circuit; a second path that includes a second logic circuit; and a subsequent-stage circuit that is connected to an output of the first path and is connected to an output of the second path, in which the second path further includes a first internal path that is selected as a propagation path during a normal operation period; and a second internal path that is selected as a propagation path during a test operation period and includes a delay circuit having a delay amount larger than a delay amount of the first internal path. | 01-14-2010 |
| 20100054062 | Static random access memory (SRAM) and test method of the SRAM having precharge circuit to precharge bit line - An SRAM includes a memory cell and a precharge circuit. The precharge circuit precharges a bit line pair with a power supply voltage before writing a data in the memory cell or before reading a data therefrom at a time of a normal mode, and which feeds a power supply voltage to at least a low level data-holding node of a node pair of the memory cell at a time of a read test mode, between time for writing a data in the memory cell and time for reading a data therefrom. | 03-04-2010 |
| 20100201394 | TEST CIRCUIT AND TEST METHOD FOR TESTING DIFFERENTIAL INPUT CIRCUIT - A test circuit includes a signal level modifying circuit. The signal level modifying circuit modifies at least one of signal levels of an inverting input signal and a noninverting input signal supplied to a differential input circuit in response to a test signal outputted from a signal output circuit to make a difference between signal levels of the inverting input signal and the noninverting input signal smaller than that in a normal operation. Here, the test signal indicates a test mode in which input/output characteristics of the differential input circuit is tested. | 08-12-2010 |
| 20100226190 | SRAM AND TESTING METHOD OF SRAM - An SRAM includes a memory cell; and a control circuit configured to change a signal level of a signal which is used in an ordinary mode for access to the memory cell in a test mode to apply a disturbance to the memory cell. The control circuit can change the signal level to set a level of the disturbance optionally. | 09-09-2010 |
| 20100246243 | SEMICONDUCTOR STORAGE DEVICE - A semiconductor storage device in accordance with an exemplary aspect of the present invention includes a plurality of memory cells arranged in a matrix pattern, a plurality of word lines each provided so as to correspond to each line of the memory cells, a plurality of bit lines each connected to respective one of the memory cells, and a row selection circuit that, in a read operation, drives the word line to a set potential at a drive speed slower than a discharge speed of the bit line exhibited when the word line is raised roughly vertically to VDD. | 09-30-2010 |
| 20110122672 | Non-volatile semiconductor memory device - A non-volatile semiconductor memory device having a memory cell in which operating potentials are few and the scale of the peripheral circuitry is reduced includes a select transistor having a source/drain on both sides of a channel of a semiconductor substrate and having a gate electrode disposed on the channel via a thick gate insulating film; an element isolation region formed on the semiconductor substrate in an area adjacent to the select transistor; an antifuse adjacent to the element isolation region, having a lower electrode formed on the semiconductor substrate and having an upper electrode disposed on the semiconductor substrate in an area between the element isolation region and lower electrode via a thin gate insulating film; and a connection contact electrically connecting the source and upper electrode and contacting the source and the upper electrode. | 05-26-2011 |
