| Patent application number | Description | Published |
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| 20110039026 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A silicon oxide film is deposited by rotating a rotation table on which a wafer W is placed to allow BTBAS gas to be adsorbed on an upper surface of the wafer W and supply a O | 02-17-2011 |
| 20110139074 | FILM DEPOSITION APPARATUS - A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space. | 06-16-2011 |
| 20110155057 | PLASMA PROCESS APPARATUS - A plasma process apparatus for processing a substrate by using plasma including a vacuum chamber in which the processing of the substrate is performed, a turntable inside the vacuum chamber, the turntable having at least one substrate receiving area, a rotation mechanism rotating the turntable, a gas supplying part supplying plasma generation gas to the substrate receiving area, a main plasma generating part ionizing the plasma generation gas, being provided in a position opposite to a passing area of the substrate receiving area, and extending in a rod-like manner from a center portion of the turntable to an outer circumferential portion of the turntable, an auxiliary plasma generating part compensating for insufficient plasma of the main plasma generating part, the auxiliary plasma generating part being separated from the main plasma generating part in a circumferential direction of the vacuum chamber, and an evacuating part evacuating the vacuum chamber. | 06-30-2011 |
| 20110159188 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product. | 06-30-2011 |
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| 20090186479 | Semiconductor processing system including vaporizer and method for using same - A semiconductor processing system including a semiconductor processing apparatus and a gas supply apparatus for supplying a process gas into the semiconductor processing apparatus includes a control section configured to control an operation of a pressure adjusting mechanism for adjusting the pressure inside a vaporizing chamber. The control section is preset to cause the pressure inside the vaporizing chamber to fall within a predetermined pressure range with reference to a pressure detection value obtained by a pressure detector. The predetermined pressure range is defined by an upper limit lower than a first limit value, at which vaporization of the liquid material starts being inhibited due to an increase in the pressure, and a lower limit higher than a second limit value, at which vaporization of the liquid material starts being unstable and the pressure inside the vaporizing chamber starts pulsating movement due to a decrease in the pressure. | 07-23-2009 |
| 20100055347 | ACTIVATED GAS INJECTOR, FILM DEPOSITION APPARATUS, AND FILM DEPOSITION METHOD - An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom. | 03-04-2010 |
| 20100116210 | GAS INJECTOR AND FILM DEPOSITION APPARATUS - An injector body of a gas injector has a gas inlet and a gas passage; plural gas outflow openings disposed on a wall part of the injector body along a longitudinal direction of the injector body; and a guide member that provides a slit-shaped gas discharge opening extending in the longitudinal direction of the injector body on an outer surface of the injector body, and guides gas flowing from the gas outflow openings to the gas discharge opening. | 05-13-2010 |
| 20100227059 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A film is deposited to a predetermined thickness on a wafer by allowing the wafer placed on a susceptor to alternately move through plural process areas where corresponding plural reaction gases are supplied from corresponding plural reaction gas supplying portions and a separation area where a separation gas is supplied from a separation gas supplying portion in order to separate the plural reaction gases. Such movement is achieved by rotating the susceptor relative to the plural reaction gas supplying portions and the separation gas supplying portion, or rotating the plural reaction gas supplying portions and the separation gas supplying portion relative to the susceptor. Then, when the film is deposited in the above manner to a predetermined thickness, the film deposition is temporarily stopped; the wafer is rotated around its center; and the film is deposited to another predetermined thickness in the same manner. | 09-09-2010 |
| 20100229797 | FILM DEPOSITION APPARATUS - A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor. | 09-16-2010 |
| 20100260935 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product. | 10-14-2010 |
| 20100260936 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - In a substrate processing apparatus, a film deposition device and a heat processing device to perform an anneal processing are airtightly connected to a vacuum conveying chamber, and a substrate rotating unit to cause a substrate to rotate around a vertical axis is provided in the vacuum conveying chamber. A control unit is arranged to stop a relative rotation of a plurality of reactive gas supplying units, a separating gas supplying unit and a table by a rotation device in the middle of a film deposition process of the substrate, cause a conveying unit to take out the substrate from a vacuum chamber, and output a control signal that causes a substrate rotating unit to change a direction of the substrate. | 10-14-2010 |
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| 20080217087 | FUEL CELL MOTORCYCLE - A layout for an exhaust pipe which also serves as a drainage pipe which prevents splashing of water generated in a fuel cell toward a passenger or splashing toward a tire. Humid excessive gas supplied from a fuel cell is diluted in a dilution box by off-gas discharged from the fuel cell and is used for humidifying air in the humidifier. An exhaust pipe is connected to the dilution box, and diluted hydrogen gas is discharged via the exhaust pipe. Vapor mixed in hydrogen gas is condensed in the exhaust pipe and turned into water, which is drained through the exhaust pipe that extends rearwardly of a vehicle body through the interior of a power unit. A discharge port of the exhaust pipe (which is also a drainage port for water generated in the fuel cell) is positioned at the widthwise center of the vehicle body. | 09-11-2008 |
| 20100078237 | ELECTRIC MOTORCYCLE - An electric motorcycle is provided such that even if a power drive unit is mounted to a swing arm, it is difficult for a load to be applied to wiring connected to the power drive unit. In an electric motorcycle in which a PDU and a running-purpose power-generating motor are attached to a swing arm turning around a pivot shaft, and electricity from batteries is supplied via a contactor box to the PDU, from which the electricity is supplied to a power-generating motor, torsional portions extending generally parallel to the pivot shaft are provided at a portion of output lines connecting the contactor box with the PDU so as to allow torsion to absorb swinging movement of the swing arm. | 04-01-2010 |
| 20100078248 | ELECTRIC MOTORCYCLE - An electric motorcycle in which the disposition space of a motor is downsized, the number of components is reduced, and the power transmission efficiency is improved. In an electric motorcycle, a swing arm is swingably supported by a vehicle body frame and supports a power generating motor. A driving shaft of the power generating motor and a rear wheel axle of a rear wheel are coupled together. A driving force of the power generating motor is transmitted to the rear wheel. In the electric motorcycle, the driving shaft of the power generating motor is disposed generally in parallel to the rear wheel axle of the rear wheel. A driving gear is provided on the driving shaft. A driving gear is in meshing engagement with a reduction gear provided on the rear wheel axle. The driving gear has a smaller diameter than that of the reduction gear. A driving force of the power generating motor is transmitted to the rear wheel axle through a reduction. | 04-01-2010 |
