| Patent application number | Description | Published |
|---|
| 20080258142 | Semiconductor device, its manufacture method and template substrate - The semiconductor device has: a ZnO-containing substrate containing Li; a zinc silicate layer formed above the ZnO-containing substrate; and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer. | 10-23-2008 |
| 20090008660 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted. | 01-08-2009 |
| 20090061559 | MANUFACTURE METHOD FOR ZnO-CONTAINING COMPOUND SEMICONDUCTOR LAYER - A manufacture method for a ZnO-containing compound semiconductor layer has the steps of: (a) preparing a substrate; and (b) growing a ZnO-containing semiconductor layer above the substrate by supplying at the same time at least Zn and O as source gases and S as surfactant. There is provided the manufacture method for the ZnO-containing compound semiconductor layer with improved flatness. | 03-05-2009 |
| 20090206333 | ZnO BASED SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD - A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure. | 08-20-2009 |
| 20090226608 | APPARATUS AND METHOD FOR COATING PARTICLES - An apparatus for coating particles with a polymer electrolyte, which includes at least one polymer membrane shell-coating part, the particles being coated with a membrane shell in the at least one polymer membrane shell-coating part by performing a step including contacting the particles having a predetermined charge with the polymer electrolyte having a charge opposite to that of the outer surface of the particles, thereby forming a membrane shell on the surface of the outermost layer of the particles. | 09-10-2009 |
| 20090236598 | ZnO LAYER AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer. | 09-24-2009 |
| 20090272972 | ZnO BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE METHOD - A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO | 11-05-2009 |
| 20090294758 | ZnO-CONTAINING SEMICONDUCTOR LAYER, ITS MANUFACTURE METHOD, AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO. | 12-03-2009 |
| 20100123129 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND DEVICE USING THE SAME - Mg is doped in a ZnO-containing semiconductor layer in a concentration range from 1×10 | 05-20-2010 |
| 20110059183 | WATER-INSOLUBLE MEDICINE - A method of producing water-insoluble anti-cancer drug in the form of particulates, the method including preparing a water-insoluble anti-cancer drug having at least one multiple bond in the structure, and irradiating said water-insoluble anti-cancer drug with a laser beam having a wavelength of a low absorption portion in the vicinity of the foot of an absorption curve on the long wavelength side within the absorption band until said water-insoluble anti-cancer drug is formed into particulates having an average particle diameter of 50 to 200 nm. | 03-10-2011 |
| 20110059563 | MANUFACTURE METHOD FOR ZnO-BASED LIGHT EMITTING DEVICE - A manufacture method for a ZnO-based light emitting device, includes the steps of: forming a ZnO-based semiconductor layer of a first conductivity type above a substrate; two-dimensionally growing a first ZnO-based semiconductor layer of a second conductivity type opposite to the first conductivity type above the ZnO-based semiconductor layer of the first conductivity type; and three-dimensionally growing a second ZnO-based semiconductor layer of the second conductivity type on the first ZnO-based semiconductor layer of the second conductivity type. | 03-10-2011 |
| 20110073857 | SEMICONDUCTOR DEVICE, ITS MANUFACTURE METHOD AND TEMPLATE SUBSTRATE - A semiconductor device includes a ZnO-containing substrate containing Li, a zinc silicate layer formed above the ZnO-containing substrate, and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer. | 03-31-2011 |
| 20110084275 | ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE - A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted. | 04-14-2011 |
| 20110089418 | ZINC OXIDE BASED COMPOUND SEMICONDUCTOR DEVICE - In a ZnO based compound semiconductor device, nitrogen (N) doped (Mg)ZnO:N layer is inserted as a diffusion barrier layer 9 between a ZnO based n-type layer 3 to which n-type dopants are doped and an active layer 4 or a p-type layer 5. The diffusion barrier layer 9 prevents diffusion of the n-type dopants to the active layer 4 or the p-type layer 5. Crystalline quality of the active layer 4 of the ZnO based compound semiconductor device is not deteriorated by the diffusion of the n-type dopants. | 04-21-2011 |
