| Patent application number | Description | Published |
|---|
| 20080210167 | IMPURITY INTRODUCING APPARATUS AND IMPURITY INTRODUCING METHOD - It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively. | 09-04-2008 |
| 20080233723 | PLASMA DOPING METHOD AND APPARATUS - There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine. | 09-25-2008 |
| 20080258082 | Plasma Processing Method and Plasma Processing Apparatus - It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing. | 10-23-2008 |
| 20080308871 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region. | 12-18-2008 |
| 20080318399 | PLASMA DOPING METHOD - A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. | 12-25-2008 |
| 20090023262 | Method for fabricating semiconductor device - To provide a fine transistor of high precision. A method for fabricating a transistor comprises the step of forming a gate electrode ( | 01-22-2009 |
| 20090035878 | Plasma Doping Method and Apparatus - There are provided a plasma doping method and apparatus which is excellent in a repeatability and a controllability of an implanting depth of an impurity to be introduced into a sample or a depth of an amorphous layer. | 02-05-2009 |
| 20090042321 | APPARATUS AND METHOD FOR PLASMA DOPING - Gas supplied to gas flow passages of a top plate from a gas supply device by gas supply lines forms flow along a vertical direction along a central axis of a substrate, so that the gas blown from gas blow holes can be made to be uniform, and a sheet resistance distribution is rotationally symmetric around a substrate center. | 02-12-2009 |
| 20090068769 | Method and Apparatus for Plasma Processing - An object of the invention is to provide a method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. | 03-12-2009 |
| 20090130335 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, DIELECTRIC WINDOW USED THEREIN, AND MANUFACTURING METHOD OF SUCH A DIELECTRIC WINDOW - A method for performing plasma doping which is high in uniformity. A prescribed gas is introduced into a vacuum container from gas supply apparatus while being exhausted through an exhaust hole by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency power of 13.56 MHz is supplied from a high-frequency power source to a coil which is disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. The dielectric window is composed of plural dielectric plates, and grooves are formed in at least one surface of at least two dielectric plates opposed to each other. Gas passages are formed by the grooves and a flat surface(s) opposed to the grooves, and gas flow-out holes which are formed in the dielectric plate that is closest to the sample electrode communicate with the grooves inside the dielectric window. The flow rates of gases that are introduced through the gas flow-out holes and the gas flow-out holes, respectively, can be controlled independently of each other, whereby the uniformity of processing can be increased. | 05-21-2009 |
| 20090140174 | Impurity Introducing Apparatus and Impurity Introducing Method - It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. | 06-04-2009 |
| 20090176355 | Plasma Doping Method and Plasma Processing Device - An object of the invention is to provide a plasma doping method excellent in the uniformity of concentration of impurities introduced into the surface of a sample and a plasma processing device capable of uniformly performing plasma processing of a sample. | 07-09-2009 |
| 20090181526 | Plasma Doping Method and Apparatus - An object of the invention is to provide a plasma doping method and a plasma doping apparatus in which uniformity of concentration of impurities introduced into a sample surface are excellent. | 07-16-2009 |
| 20090186426 | Plasma Doping Method and Apparatus Employed in the Same - A plasma doping method and a plasma doping apparatus, having a superior in-plane uniformity of an amorphous layer formed on a sample surface, are provided. | 07-23-2009 |
| 20090233383 | Plasma Doping Method and Apparatus - It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample. | 09-17-2009 |
| 20090233385 | Plasma Doping Method and Plasma Doping Apparatus - Before a plasma doping process is performed, there is generated a plasma of a gas containing an element belonging to the same group in the periodic table as the primary element of a silicon substrate | 09-17-2009 |
| 20090233427 | PLASMA DOPING METHOD - An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping condition is set with respect to a dose of the impurity to be introduced into the substrate so that a first one of doses in a central portion and in a peripheral portion of the substrate is greater than a second one of the doses during an initial period of doping, with the second dose becoming greater than the first dose thereafter. | 09-17-2009 |
| 20100075489 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PRODUCING APPARATUS - A plasma of a gas containing an impurity is produced through a discharge in a vacuum chamber, and a plurality of substrates are successively doped with the impurity by using the plasma, wherein a plasma doping condition of a subject substrate is adjusted based on an accumulated discharge time until the subject substrate is placed in the vacuum chamber. | 03-25-2010 |
| 20100098837 | PLASMA DOPING METHOD AND APPARATUS - It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample. | 04-22-2010 |
| 20100330782 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region. | 12-30-2010 |
