| Patent application number | Description | Published |
|---|
| 20100238710 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device, includes: a memory layer having a resistance changeable by performing at least one selected from applying an electric field and providing a current, the storage layer having a first major surface; a plurality of first electrodes provided on the first major surface; a plurality of probe electrodes disposed to face the plurality of first electrodes, the plurality of probe electrodes having a changeable relative positional relationship with the first electrodes; a drive unit connected to the plurality of probe electrodes to record information in the memory layer by causing at least the one selected from the electric field and the current between at least two of the plurality of first electrodes via the plurality of probe electrodes, the electric field having a component parallel to the first major surface, the current flowing in a direction having a component parallel to the first major surface. | 09-23-2010 |
| 20100243980 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING NONVOLATILE MEMORY DEVICE - A nonvolatile memory device includes: a first interconnection extending in a first direction; a second interconnection extending in a second direction nonparallel to the first direction; and a memory layer placed between the first interconnection and the second interconnection and reversibly transitioning between a first state and a second state by a current supplied via the first interconnection and the second interconnection. A cross section parallel to the first and the second direction of the memory layer decreases toward the second interconnection. | 09-30-2010 |
| 20100244114 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile memory device includes: at least one first interconnection extending in a first direction; at least one second interconnection disposed above the first interconnection and extending in a second direction nonparallel to the first direction; a memory cell disposed between the first interconnection and the second interconnection at an intersection of the first interconnection and the second interconnection and including a memory element; and an element isolation layer disposed between the memory cells. At least one dielectric film with a higher density than the element isolation layer is disposed on a sidewall surface of the memory cell. | 09-30-2010 |
| 20100244248 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile memory device, includes: a lower side electrode aligned in a first direction; an upper side electrode positioned above the lower side electrode and aligned in a second direction intersecting the first direction; and a memory unit provided between the lower side electrode and the upper side electrode. At least one selected from the lower side electrode and the upper side electrode includes a first electrode and a second electrode, the first electrode having a forward-tapered side wall, the second electrode having a reverse-tapered side wall and being adjacent to the first electrode via an insulating layer in substantially identical plane. | 09-30-2010 |
| 20100248431 | METHOD FOR MANUFACTURING NONVOLATILE STORAGE DEVICE - A method for manufacturing a nonvolatile storage device including: a plurality of first electrodes aligning in a first direction; a plurality of second electrodes aligning in a second direction nonparallel to the first direction and provided above the first electrodes; and a first storage unit provided between the first electrode and the second electrode and including a first storage layer, a resistance of the first storage layer changing by at least one of an applied electric field and an applied current, the method includes: stacking a first electrode film forming a first electrode and a first storage unit film forming a first storage unit on a major surface of a substrate; processing the first electrode film and the first storage unit film into a strip shape aligning in the first direction; burying a sacrifice layer between the processed first electrode films and between the processed first storage unit films; forming a second electrode film forming a second electrode on the first storage unit film and the sacrifice layer; forming a mask layer having a lower etching rate than the sacrifice layer on the second electrode film; processing the second electrode film into a strip shape aligning in the second direction nonparallel to the first direction by using the mask layer as a mask; removing a portion of the first storage unit film exposed from the sacrifice layer by using the mask layer as a mask to process the first storage unit film into a columnar shape including a side wall along the first direction and a side wall along the second direction; removing the sacrifice layer to expose the first storage unit film having been covered with the sacrifice layer; and removing the exposed first storage unit film. | 09-30-2010 |
| 20100252797 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device, includes: a memory layer having a resistance changeable by performing at least one selected from applying an electric field and providing a current, the memory layer having a first major surface and a second major surface opposite to the first major surface; a plurality of first electrodes provided on the first major surface; a second electrode provided on the second major surface; a probe electrode disposed to face the plurality of first electrodes, the probe electrode having a changeable relative positional relationship with the first electrodes; and a drive unit connected to the probe electrode and the second electrode to record information in the memory layer by causing at least one selected from applying the electric field and providing the current via the probe electrode to the memory layer between the second electrode and at least one of the plurality of first electrodes. | 10-07-2010 |
| 20110069525 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile memory device includes a memory cell. The memory cell is connected to a first interconnection and a second interconnection and includes a plurality of layers. The plurality of layers includes a memory layer and a carbon nanotube-containing layer which is in contact with the memory layer and contains a plurality of carbon nanotubes. | 03-24-2011 |
| Patent application number | Description | Published |
|---|
| 20110031468 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, a third electrode, a first memory portion and a second memory portion. The first electrode extends in a first direction and is provided on the substrate. The second electrode extends in a second direction crossing the first direction and is provided on the first electrode. The third electrode extends in a third direction crossing the second direction and is provided on the second electrode. The first memory portion is provided between the first and the second electrodes and has a first oxygen composition ratio and a first layer thickness. The second memory portion is provided between the second and the third electrodes and has at least one of a second oxygen composition ratio different from the first oxygen composition ratio and a second layer thickness different from the first layer thickness. | 02-10-2011 |
| 20110037045 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, and a memory. The first electrode is provided on the substrate. The second electrode crosses on the first electrode. The memory portion is provided between the first electrode and the second electrode. At least one of an area of a first memory portion surface of the memory portion opposed to the first electrode and an area of a second memory portion surface of the memory portion opposed to the second electrode is smaller than an area of a cross surface of the first electrode and the second electrode opposed to each other by the crossing. | 02-17-2011 |
| 20110149638 | NONVOLATILE MEMORY DEVICE AND INFORMATION RECORDING METHOD - According to one embodiment, a nonvolatile memory device includes a memory layer and a driver section. The memory layer has a first state having a first resistance under application of a first voltage, a second state having a second resistance higher than the first resistance under application of a second voltage higher than the first voltage, and a third state having a third resistance between the first resistance and the second resistance under application of a third voltage between the first voltage and the second voltage. The driver section is configured to apply at least one of the first voltage, the second voltage and the third voltage to the memory layer to record information in the memory layer. | 06-23-2011 |
| 20110175053 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a nonvolatile memory device includes a substrate, first electrodes, a first and a second interelectrode insulating layer, second electrodes, a memory portion and a first protrusion. The first electrodes are provided on the substrate and extend in a first direction. The first interelectrode insulating layer is provided between the first electrodes. The second electrodes are opposed to the first electrodes and extend in a second direction crossing the first direction. The second interelectrode insulating layer is provided between the second electrodes. The memory portion is provided between the first electrode and the second electrode. The first protrusion is conductive and provided at least one of between the first electrode and the memory portion and between the first interelectrode insulating layer and the memory portion, and between the second electrode and the memory portion and between the second interelectrode insulating layer and the memory portion. | 07-21-2011 |
