| Patent application number | Description | Published |
|---|
| 20080219006 | Display apparatus - The present invention supplied a display apparatus using plastic substrate instead of glass substrate, which can solve such problems that the plastic substrate has a low heat conductivity and its heat release performance becomes bad so that it is difficult to obtain stable performance and reliability. In the display apparatus, inner surface electrode integrated with vertical wiring between plastic substrate and thin film LED | 09-11-2008 |
| 20080224170 | Semiconductor wafer, light emitting diode print head, image forming apparatus, and method of producing semiconductor device - A nitride semiconductor wafer includes a substrate; a nitride compound semiconductor layer formed on the substrate; and an Al | 09-18-2008 |
| 20080251798 | Semiconductor device, LED head and image forming apparatus - A semiconductor device is supplied which is able to efficiently liberate heat produced by semiconductor element toward external, prevent temperature rise, improve operation characteristic and maintain stable operation. The semiconductor device comprises a substrate and a semiconductor thin film layer which is accumulated on the substrate and contains semiconductor element, the substrate is a metal substrate, between the metal substrate and the semiconductor thin film layer, a diamond-like carbon layer with high heat conductivity and good insulativity is furnished as a surface coating layer. | 10-16-2008 |
| 20080274571 | Semiconductor device, LED print head and image-forming apparatus using same, and method of manufacturing semiconductor device - In a method of manufacturing a semiconductor thin film piece device, a plurality of semiconductor thin film pieces ( | 11-06-2008 |
| 20090001391 | LIGHT EMITTING PANEL, DISPLAY DEVICE AND LIGHT SOURCE DEVICE - A light emitting panel includes a plurality of light emitting element arrays each of which has a plurality of light emitting elements arranged in a plane. The light emitting element arrays are configured so that an arrangement plane of the light emitting elements of one light emitting element array is overlapped with another arrangement plane of the light emitting elements of another light emitting element array in substantially parallel to each other, and so that the light emitting elements of one light emitting element array and the light emitting elements of another light emitting element array emit lights to the same side. | 01-01-2009 |
| 20090149000 | Combined semiconductor apparatus with thin semiconductor films - A semiconductor apparatus includes two thin semiconductor films bonded to a substrate, and a thin-film interconnecting line electrically connecting a semiconductor device such as a light-emitting device in the first thin semiconductor film to an integrated circuit in the second thin semiconductor film. Typically, the integrated circuit drives the semiconductor device. The two thin semiconductor films are formed separately from the substrate. The first thin semiconductor film may include an array of semiconductor devices. The first and second thin semiconductor films may be replicated as arrays bonded to the same substrate. Compared with conventional semiconductor apparatus comprising an array chip and a separate driver chip, the invented apparatus is smaller and has a reduced material cost. | 06-11-2009 |
| 20090212398 | Semiconductor device - A thin-film semiconductor element is formed on a plastic substrate in a semiconductor device. A thermal expansion buffer layer is interposed between the thin-film semiconductor element and the plastic substrate. Although the thin-film semiconductor element is made from a material with a thermal expansion coefficient differing from the thermal expansion coefficient of the plastic substrate, the thermal expansion buffer layer interposed between the thin-film semiconductor element and the plastic substrate protects the thin-film semiconductor element from damage caused by mechanical stress in the device fabrication process due to the different thermal expansion coefficients, enabling the semiconductor device to function reliably. | 08-27-2009 |
| 20090229737 | METHOD FOR REPAIRING INNER FACE PORTION OF PNEUMATIC TIRE AND REPAIR MEMBER FOR INNER FACE PORTION - The invention relates to (I) a method for repairing an inner face portion of a pneumatic tire | 09-17-2009 |
| 20090239361 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer. | 09-24-2009 |
| 20090242904 | Semiconductor Light Emitting Apparatus and Optical Print Head - A semiconductor light emitting apparatus is supplied capable of providing a high performance that can optimize simultaneously both an electrical characteristic and a light emitting characteristic. The semiconductor apparatus comprises an anode layer; a cathode layer that has a conductive type different from that of the anode layer; a gate layer that controls an electrical conduction between the anode layer and the cathode layer; an active layer that is set between the anode layer and the cathode layer and emits light through recombination of electron and positive hole; a first cladding layer that is set on one surface of the active layer and has an energy band gap larger than that of the active layer; and a second cladding layer that is set on other surface of the active layer, has an energy band gap larger than that of the active layer and has a conductive type different from that of the first cladding layer, wherein a thickness of the gate layer is or below a mean free path of carriers implanted into the gate layer. | 10-01-2009 |
| 20090242905 | SEMICONDUCTOR DEVICE, OPTICAL PRINT HEAD AND IMAGE FORMING APPARATUS - A semiconductor device and an optical print head, an image forming apparatus that has the semiconductor device are supplied capable of reduce occurrence probability of defect. The semiconductor device is formed by using semiconductor thin film bonded on the substrate, and includes a covering layer that covers at least one part region of the semiconductor thin film and covers at least one part of electroconductive member connecting with the semiconductor thin film. | 10-01-2009 |
| 20100065859 | Semiconductor device and method of manufacturing the same - A semiconductor device includes a substrate, and a semiconductor thin film bonded to the substrate, wherein the semiconductor thin film includes a plurality of discrete operating regions and an element isolating region which isolates the plurality of discrete operating regions, and the element isolating region is etched to a shallower depth than a thickness of the semiconductor thin film, and is a thinner region than the plurality of discrete operating regions. | 03-18-2010 |
| 20100072633 | Semiconductor apparatus with thin semiconductor film - A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost. | 03-25-2010 |
| 20100096748 | Combined semiconductor apparatus with semiconductor thin film - A combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region. A surface of the semiconductor thin film, in which the semiconductor device is formed, is disposed on a side of the planarized region. The apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film. | 04-22-2010 |
| 20110081738 | Semiconductor composite apparatus, method for manufacturing the semiconductor composite apparatus, LED head that employs the semiconductor composite apparatus, and image forming apparatus that employs the LED head - A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer. | 04-07-2011 |
| 20110147760 | Semiconductor apparatus with thin semiconductor film - A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost. | 06-23-2011 |
