| Patent application number | Description | Published |
|---|
| 20090001362 | Organic Thin Film Transistor and Manufacturing Process the Same - Described is a SIT type organic thin film transistor in which gate electrodes are formed as a conductive layer where a plurality of wire-shaped conductive materials are arranged in such a manner that a distance to the nearest wire is 100 nm or less at any point in the space between the wires or a semiconductor portion (B) between the gate electrodes has a rectangular cross section formed by a length of shorter sides in the range of 20 nm to 200 nm and a length of longer side 2 μm or more. This provides an organic thin film transistor which can be fabricated easily at a low temperature, at a low cost, and with high-speed drive ability, a high ON/OFF ratio, and a high controllability. | 01-01-2009 |
| 20090315043 | ORGANIC LIGHT-EMITTING TRANSISTOR AND DISPLAY DEVICE - An organic light-emitting transistor having a source electrode layer; a drain electrode layer facing the source electrode layer; an organic light-emitting layer formed between the source electrode layer and the drain electrode layer; a semiconductor layer formed between the organic light-emitting layer and the source electrode layer; and a gate electrode layer deposited to face through a gate insulation film to one face of the source electrode layer opposite to the other face facing the drain electrode layer. The organic light-emitting transistor further comprises: a charge-carrier suppression layer formed between the organic light-emitting layer and the source electrode layer to have an aperture; and a relay region formed between the charge-carrier suppression layer and the source electrode layer to relay charge-carriers from the source electrode layer to the aperture. | 12-24-2009 |
| 20100090202 | ORGANIC TRANSISTOR ELEMENT, ITS MANUFACTURING METHOD, ORGANIC LIGHT-EMITTING TRANSISTOR, AND LIGHT-EMITTING DISPLAY DEVICE - In a method for manufacturing an organic transistor element, an electrode is subjected to wet etching into a predetermined pattern on an organic semiconductor layer. In the process for performing wet etching on the electrode so as to obtain a predetermined pattern, an etching liquid containing a dopant of the organic semiconductor layer is used to perform wet etching on the electrode and, simultaneously, the organic semiconductor layer is doped with the dopant. | 04-15-2010 |
| 20100102324 | SWITCHING ELEMENT AND MANUFACTURING METHOD THEREOF - Disclosed is a switching element provided with a gate dielectric film and an active layer disposed in contact with the gate dielectric film. The active layer includes carbon nanotubes, and the gate dielectric film includes non-conjugated polymer containing an aromatic ring in a side chain. | 04-29-2010 |
| 20100163858 | SWITCHING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A problem of a switching element using for the active layer a carbon nanotube (CNT) dispersion film that can be manufactured at low temperature has been that sufficient electrical contact and thermal conductivity between the CNTs and the source and drain electrode surfaces are not obtained. The switching element of the present invention has a structure in which a mixed layer of carbon nanotubes and a metal material, and a metal layer of the metal material are laminated in this order on source and drain electrodes, and thereby, the CNT-dispersed film and the electrode surfaces can be in firm electrical, mechanical, and thermal contact with each other. Thus, a switching element exhibiting good and stable transistor characteristics is obtained with a low-temperature, convenient, and low-cost process. | 07-01-2010 |
| 20100224862 | CARBON NANOTUBE STRUCTURE AND THIN FILM TRANSISTOR - When an electronic element using a carbon nanotube (CNT) is fabricated, particularly when a carbon nanotube thin film is formed on a previously formed electrode, a CNT film is manufactured on the previously formed electrode, and the CNT film on the electrode is used as an electronic element, as it is. In this case, a problem is that unless the carbon nanotubes and the electrode are in sufficient contact with each other, the contact resistance increases, and sufficient element properties are not obtained. When a carbon nanotube thin film is formed on a previously formed electrode, a conductive organic polymer thin film is formed, before or after the carbon nanotube thin film is manufactured, to decrease the contact resistance. | 09-09-2010 |
| 20110114914 | FIELD EFFECT TRANSISTOR AND CIRCUIT DEVICE - An end portion ( | 05-19-2011 |
| 20110215315 | SWITCHING ELEMENT AND METHOD FOR FABRICATING SAME - A switching element comprises a source electrode, a drain electrode arranged apart from the source electrode, an active layer in contact with the electrodes, and a gate electrode arranged apart from the source and drain electrodes and being in contact with the active layer with a gate insulating layer interposed therebetween. The active layer is formed of a dispersion film containing predetermined carbon nanotubes and a predetermined polyether compound. | 09-08-2011 |
