Patent application number | Description | Published |
20090302502 | PROCESS OF PRODUCING LIQUID DISCHARGE HEAD - Provided is a process of producing a liquid discharge head having a substrate, a passage-forming member, and a patterned layer. The process includes providing a resin layer on a substrate; providing a resist pattern on the resin layer for patterning the resin layer; forming a patterned layer by patterning the resin layer using the resist pattern as a mask; providing a layer for forming a passage pattern having a shape of passage on the resist pattern lying on the patterned layer; forming a passage pattern by patterning the layer for forming a passage pattern; removing the resist pattern; providing a passage-forming member so as to cover the passage pattern and the patterned layer; and removing the passage pattern to give the passage. | 12-10-2009 |
20100147793 | METHOD FOR PRODUCING LIQUID DISCHARGE HEAD - The present invention provides a method for producing a liquid discharge head including a silicon substrate having, on a first surface, energy generating elements, and a supply port penetrating the substrate from the first surface to a second surface, which is a rear surface of the first surface of the substrate. The method includes the steps of: preparing the silicon substrate having a sacrifice layer at a portion on the first surface where the ink supply port is to be formed and an etching mask layer having a plurality of openings on the second surface, the volume of a portion of the sacrifice layer at a position corresponding to a portion between two adjacent said openings being smaller than the volume of a portion of the sacrifice layer at a position corresponding to the opening; etching the silicon substrate from the plurality of openings and etching the sacrifice layer. | 06-17-2010 |
20100216264 | METHOD OF MANUFACTURING A SUBSTRATE FOR A LIQUID DISCHARGE HEAD - A method of manufacturing a substrate for a liquid discharge head, the substrate being a silicon substrate having a first surface opposed to a second surface, the method comprising the steps of providing a layer on the second surface of the silicon substrate, wherein the layer has a lower etch rate than silicon when exposed to an etchant of silicon, partially removing the layer so as to expose part of the second surface of the silicon substrate, wherein the exposed part surrounds at least one part of the layer; and wet etching the layer and the exposed part of the second surface of the silicon substrate, using the etchant of silicon, to form a liquid supply port extending from the second surface to the first surface of the silicon substrate. | 08-26-2010 |
20110151598 | METHOD FOR MANUFACTURING A SUBSTRATE FOR LIQUID-EJECTING HEADS AND A LIQUID-EJECTING HEAD - A method for manufacturing a substrate for liquid-ejecting heads includes etching a surface of a silicon substrate using a first etchant, with a silicon oxide layer as a mask, to form a depression as a part of a liquid supply port, and subsequently etching at least the silicon oxide layer and the thickness sandwiched between the depression and the etched surface of the silicon substrate with a second etchant to form the liquid supply port. | 06-23-2011 |
20110183448 | LIQUID COMPOSITION, METHOD OF PRODUCING SILICON SUBSTRATE, AND METHOD OF PRODUCING LIQUID DISCHARGE HEAD SUBSTRATE - A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water. | 07-28-2011 |
20120058578 | METHOD OF MANUFACTURING A SUBSTRATE FOR LIQUID EJECTION HEAD - Provided is a method of manufacturing a substrate for liquid ejection head, including: forming a groove portion by etching on one surface side of a silicon substrate, the groove portion being formed so as to surround a portion at which a liquid supply port is to be formed on an inner side of the groove portion; forming a protective layer on the one surface side of the silicon substrate, the protective layer being formed inside the groove portion and on an outer side of the groove portion; and forming the liquid supply port by subjecting the silicon substrate to crystal anisotropic etching treatment with use of the protective layer as a mask. | 03-08-2012 |
20120088317 | PROCESSING METHOD OF SILICON SUBSTRATE AND PROCESS FOR PRODUCING LIQUID EJECTION HEAD - A processing method of a silicon substrate, including forming on a back surface of a silicon substrate an etching mask layer having an opening portion, measuring a thickness of the silicon substrate, irradiating the opening portion in the etching mask layer with laser from the back surface of the silicon substrate to form in the silicon substrate a modified layer with a thickness that is varied according to the measured thickness of the silicon substrate, carrying out anisotropic etching with regard to the silicon substrate having the modified layer formed therein to form in the back surface a depressed portion which does not pass through the silicon substrate and which has a bottom surface in the silicon substrate, and carrying out dry etching in the depressed portion to form a through-hole passing from the bottom surface of the depressed portion to a front surface of the silicon substrate. | 04-12-2012 |
20120097637 | METHOD OF MANUFACTURING SUBSTRATE FOR LIQUID DISCHARGE HEAD - Provided is a method of manufacturing a substrate for a liquid discharge head including a first face, energy generating elements which generate the energy to be used to discharge a liquid to a second face opposite to the first face, and liquid supply ports for supplying the liquid to the energy generating elements. The method includes preparing a silicon substrate having, at the first face, an etching mask layer having an opening corresponding to a portion where the liquid supply ports are to be formed, and having first recesses provided within the opening, and second recesses provided in the region of the second face where the liquid supply ports are to be formed, the first recesses and the second recesses being separated from each other by a portion of the substrate; and etching the silicon substrate by crystal anisotropic etching from the opening of the first face to form the liquid supply ports. | 04-26-2012 |
20120267342 | METHOD OF PRODUCING SUBSTRATE FOR LIQUID EJECTION HEAD - A substrate for a liquid ejection head, including: forming a sacrifice layer on a first surface of a silicon substrate in a region in which a liquid supply port is to open, the sacrifice layer containing aluminum which is selectively etched with respect to the silicon substrate; forming an etching mask on a second surface which is a rear surface of the first surface of the silicon substrate, the etching mask having an opening corresponding to the sacrifice layer; a first etching step of etching the silicon substrate by using the etching mask as a mask and by using a first etchant containing 8 mass % or more and less than 15 mass % of tetramethylammonium hydroxide; and after the first etching step, a second etching step of removing the sacrifice layer by using a second etchant containing 15 mass % or more and 25 mass % or less of tetramethylammonium hydroxide. | 10-25-2012 |
20120289055 | LIQUID COMPOSITION, METHOD OF PRODUCING SILICON SUBSTRATE, AND METHOD OF PRODUCING LIQUID DISCHARGE HEAD SUBSTRATE - A liquid composition used to carry out crystal anisotropic etching of a silicon substrate provided with an etching mask formed of a silicon oxide film with the silicon oxide film used as a mask includes cesium hydroxide, an alkaline organic compound, and water. | 11-15-2012 |