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Hirotsu, JP

Ayako Hirotsu, Fukuoka JP

Patent application numberDescriptionPublished
20110260038SOLID-STATE IMAGE PICKUP ELEMENT AND METHOD FOR CONTROLLING THE SAME - A transfer circuit is configured to transfer signal charges of an accumulating region to a floating diffusion region when being operated, while being configured to stop the transfer of the signal charges when not being operated, by use of a transfer gate which is turned on and off in response to a transfer control signal. The pixel control circuit controls the transfer circuit according to a light receiving level of a pixel circuit so as to extend an operation period of the pixel circuit in a case where a light receiving quantity is not lower than a predetermined quantity, contrary to a case where the light receiving quantity is lower than the predetermined quantity.10-27-2011

Fusayoshi Hirotsu, Fukuoka JP

Patent application numberDescriptionPublished
20090101914Semiconductor Image Sensing Device - A signal charge corresponding to an incident light quantity is accumulated in a first node of each pixel circuit. An accumulated charge exhaust circuit includes each of first nodes of the plurality of pixel circuits belonging to the same pixel group, and a second node connected through discharge gates functioning as variable resistance elements. Second node functions as a floating drain during an ON period of a control switch, while accumulating the signal charge overflowing from each pixel circuit, in a capacitor during an OFF period of control switch provided at an intermediate timing in one frame period. When the incident light to the pixel group is intense, a resistance value of each discharge gate is lowered in response to an increase of the signal charge accumulated in capacitor, so that the signal charge accumulated in each pixel circuit can be exhausted once at the above intermediate timing.04-23-2009
20110260038SOLID-STATE IMAGE PICKUP ELEMENT AND METHOD FOR CONTROLLING THE SAME - A transfer circuit is configured to transfer signal charges of an accumulating region to a floating diffusion region when being operated, while being configured to stop the transfer of the signal charges when not being operated, by use of a transfer gate which is turned on and off in response to a transfer control signal. The pixel control circuit controls the transfer circuit according to a light receiving level of a pixel circuit so as to extend an operation period of the pixel circuit in a case where a light receiving quantity is not lower than a predetermined quantity, contrary to a case where the light receiving quantity is lower than the predetermined quantity.10-27-2011

Ichiro Hirotsu, Osaka-Fu JP

Patent application numberDescriptionPublished
20090275732Agent for improving circulatory disorder - Provided is a pharmaceutical agent capable of efficiently improving blood circulation in a region where a circulatory disorder occurs and fully preventing or improving tissue damage as a preventive or therapeutic agent for circulatory disorders in general. As a result of the study of pharmacological effects of a compound in which a porphyrin metal complex is clathrated in albumin, it was found that the compound efficiently improves decreases in blood flow in circulatory disorders and fully prevents or improves tissue damage, thus the invention was achieved. That is, the invention is directed to an agent for improving a circulatory disorder including a compound in which a porphyrin metal complex is clathrated in albumin.11-05-2009

Junichi Hirotsu, Fukuoka JP

Patent application numberDescriptionPublished
20090101914Semiconductor Image Sensing Device - A signal charge corresponding to an incident light quantity is accumulated in a first node of each pixel circuit. An accumulated charge exhaust circuit includes each of first nodes of the plurality of pixel circuits belonging to the same pixel group, and a second node connected through discharge gates functioning as variable resistance elements. Second node functions as a floating drain during an ON period of a control switch, while accumulating the signal charge overflowing from each pixel circuit, in a capacitor during an OFF period of control switch provided at an intermediate timing in one frame period. When the incident light to the pixel group is intense, a resistance value of each discharge gate is lowered in response to an increase of the signal charge accumulated in capacitor, so that the signal charge accumulated in each pixel circuit can be exhausted once at the above intermediate timing.04-23-2009

Kenechi Hirotsu, Osaka-Shi JP

Patent application numberDescriptionPublished
20120128081POWER LINE COMMUNICATION DEVICE, POWER SUPPLY CIRCUIT WITH COMMUNICATION FUNCTION, ELECTRICAL APPLIANCE, AND CONTROL AND MONITORING SYSTEM - To realize a transmission function of power line communication by a further simplified and cost-effective circuit configuration, in a PLC modem installed in an electric appliance such as a household electrical appliance.05-24-2012

Kenichi Hirotsu, Osaka JP

Patent application numberDescriptionPublished
20080277696Lateral Junction Field Effect Transistor and Method of Manufacturing The Same - A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.11-13-2008
20090315082LATERAL JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.12-24-2009

Patent applications by Kenichi Hirotsu, Osaka JP

Kenji Hirotsu, Yamaguchi JP

Patent application numberDescriptionPublished
20080306287Process for Preparing Tetrahydropyran-4-Carboxylic Acid Compound - The present invention is to provide a process for preparing tetrahydropyran-4-carboxylic acid represented by the formula (1):12-11-2008
20090171083PROCESS FOR PRODUCING 4-AMINOQUINAZOLINE COMPOUND - A 4-aminoquinazoline derivative can be obtained by the steps of reacting quinazolin-4-one or its derivative with a chlorinating agent in a first organic solvent in the presence of an organic base, and subsequently reacting the reaction product with an amine compound represented by the formula R07-02-2009
20090209674RESIN COMPOSITION FOR STEREOLITHOGRAPHY - Provided is a resin composition for stereolithography that absorbs little water and moisture over time in uncured state, maintains a low moisture absorption rate even under high humidity, and has high curing sensitivity, from which a stereolithography product excellent in the properties, such as dimensional accuracy, mechanical properties, and dimensional stability can be smoothly produced for reduced light irradiation time.08-20-2009
20090253909PROCESS FOR PREPARATION OF 6, 7-BIS (2-METHOXYETHOXY) QUINAZOLIN-4-ONE - 6,7-Bis(2-methoxyethoxy)quinazolin-4-one of formula (5) useful in synthesis of an anti-cancer drug can be prepared by a reaction of ethyl 2-amino-4,5-bis(2-methoxyethoxy)benzoate of formula (4) with an orthoformic acid in the presence of an ammonium acetate:10-08-2009
201001740983-ETHYLOXETHANE COMPOUND HAVING HYDROXYL GROUP AND METHOD FOR PRODUCING THE SAME - Disclosed is a 3-ethyloxethane compound having a hydroxyl group which is represented by the following general formula (1). (1) (In the formula, A represents an alkylene group having 3-5 carbon atoms which may have an ether bond or an alkylene group having 3-5 carbon atoms which may be substituted by a hydroxyl group.) The 3-ethyloxethane compound having a hydroxyl group can be produced by reacting a 3-ethyloxethane compound represented by the general formula (2) below, a diol compound represented by the general formula (3) below and a base. (2) (In the formula, X represents a leaving group.) (3) (In the formula, A is as defined above.)07-08-2010

Patent applications by Kenji Hirotsu, Yamaguchi JP

Munemitsu Hirotsu, Kanagawa JP

Patent application numberDescriptionPublished
20090104521Storage battery and insulating material and battery container using the same - A storage battery which can further intensify the sealing properties of the electrode rod piercing portion thereof, a technique capable of increasing the area of the sealing surface at the sealed portion of the storage battery, a technique capable of certainly preventing the missing of mounting of a rubber-based sealing material corresponding to O-ring at the sealed portion of the storage battery, and an insulating material having an excellent corrosion resistance to highly corrosive battery content and a battery container including same are provided.04-23-2009
20090206096THREE-PIECE SQUARE CAN AND METHOD OF MANUFACTURING THE SAME - The present invention provides a three-piece rectangular can which can overcome drawbacks (joint defect) of a can body joint portion of a three-piece can, and is of a new type which overcomes shortage of a can body strength which a two-piece can possesses, and exhibits excellent liquid leakage resistance, excellent can body strength and excellent heat radiation property or the like even when the can is used as a casing of a battery or electric equipment. For this end, the three-piece rectangular can of the present invention is formed such that a circular blank formed of an aluminum plate which forms an organic film on at least one surface thereof is formed into a bottomed circular can by deep drawing such that the organic film forms an inner side of the can, a cylindrical sleeve having no seam on a side surface thereof is formed by cutting a can bottom of the bottomed circular can, a rectangular can body portion having no seam on a side surface thereof is formed by deforming the cylindrical sleeve into a rectangular shape, a necking formed portion is formed by applying necking forming to opening portions at both ends of the rectangular can body, and a top lid and a bottom lid are mounted on the opening portions at both ends of the rectangular can body by double seaming by way of an organic compound.08-20-2009

Munemitsu Hirotsu, Yokohama-Shi JP

Patent application numberDescriptionPublished
20100056708EPDM SEALING COMPOUND AND LID COATED WITH THE SAME - A sealing compound comprising an aqueous dispersion which contains a rubber component of an ethylene propylene nonconjugated diene copolymer rubber as a chief component, a vulcanizing agent, a vulcanization accelerator and a filler. The sealing compound has excellent resistance against the contents that could not be handled with the metal container sealing compositions comprising the aqueous dispersion solution of the NBR and SBR, and exhibits excellent sealing performance and durability even when used for such contents. The sealing compound can be preferably used for the double-seam sealing being applied to the lid so as to be interposed between the lid and the container to seal the content by double-seaming the container with the lid.03-04-2010

Shin Hirotsu, Nirasaki-Shi JP

Patent application numberDescriptionPublished
20090047794Method for manufacturing semiconductor device and storage medium - [Object] It is an object of the present invention to provide a semiconductor device manufacturing method capable of forming a high perpendicularity mask pattern, which is laminated on an etching target film on a substrate, through a resist pattern formed from a resist film laminated on the organic film, for use as an etching mask for the etching target film.02-19-2009

Patent applications by Shin Hirotsu, Nirasaki-Shi JP

Takashi Hirotsu, Chiyoda-Ku JP

Patent application numberDescriptionPublished
20090084138METHOD FOR BENDING A GLASS SHEET AND APPARATUS FOR BENDING A GLASS SHEET - The present invention relates to a method or an apparatus for bending a plate-like material such as a glass sheet for a side window having a double-curved surface for automobiles wherein the positioning of support frame and forming mold is performed with high precision.04-02-2009

Teppei Hirotsu, Hitachi JP

Patent application numberDescriptionPublished
20090024777ARBITER AND ARBITRATION METHOD OF MULTIPLE DATA ACCESSES - There is provided a technique which reduces an average processing time of low-priority accesses with suppressing an average delay increase of a high-priority access processing even in a case where high-priority access request and a low-request access request are simultaneously generated to a shared access processing unit and high-priority accesses are continuously generated. And, there is provided an access arbitration equipment comprising: an issued access request retention unit; a first interval determination circuit; and a second interval determination circuit. In a case where the first interval determination circuit determines that an interval is generated between an issued access processing and a most prior access processing and a second interval determination circuit determines that no interval is generated between the issued access processing and a second-prior access request, the priority order of the most prior access request and the second-prior access request is changed.01-22-2009
20100327979Current Detection Apparatus and Control System Using the Same - A highly accurate current detection apparatus is realized in a one-chip LSI. An end of a current detector is connected to an analog power supply (VACC) or a virtual analog ground potential (VAG) of a voltage amplifier and an A/D converter, and a predetermined voltage is supplied between the voltage amplifier and the virtual ground potential (VAG) by a power supply.12-30-2010
20110049988Control System and Semiconductor Device Used Therein - The present invention aims to provide a control system which is capable of building high-precision current detecting means in a single-chip LSI and can be realized at a lower cost, and a semiconductor device used in the control system. Drive circuits are provided inside the same semiconductor chip. The drive circuits are equipped with: current detecting shunt resistors each of which is provided in each of the drive circuits and detects a current flowing through a load, the current detecting shunt resistors being provided within a semiconductor chip by the same process; a dummy resistor provided within the semiconductor chip by the same process as the current detecting shunt resistors; and a calibration reference externally attached to the semiconductor chip and connected to the dummy resistor. A correcting means corrects the values of currents that flow through the current detecting shunt resistors, using the dummy resistor and the calibration reference.03-03-2011
20110101959CURRENT-CONTROLLED SEMICONDUCTOR DEVICE AND CONTROL UNIT USING THE SAME - The present invention aims to provide a current-controlled semiconductor device which corrects fluctuations of both gain and offset of a current detection circuit to thereby enable high-accuracy current detection within a single-chip IC, and a control unit using the same.05-05-2011

Patent applications by Teppei Hirotsu, Hitachi JP

Yoshihiko Hirotsu, Osaka JP

Patent application numberDescriptionPublished
20100266868NICKEL THIN FILM, METHOD FOR FORMATION OF THE NICKEL THIN FILM, FERROMAGNETIC NANO-JUNCTION ELEMENT, METHOD FOR PRODUCING THE FERROMAGNETIC NANO-JUNCTION ELEMENT, THIN METALLIC WIRE, AND METHOD FOR FORMATION OF THE THIN METALLIC WIRE - A nickel thin film is formed, for example, to a thickness of 2 nm or more on a polyethylene naphthalate substrate by a vacuum evaporation method. A magnetoresistance effect element using ferromagnetic nano-junction is comprised by using two laminates each comprising a nickel thin film formed on a polyethylene naphthalate substrate, and joining these two laminates so that the nickel thin films cross to each other in such a manner that edges of the nickel thin films face each other.10-21-2010