Hirotatsu
Hirotatsu Ishii, Kanagawa JP
Patent application number | Description | Published |
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20130064497 | INTEGRATED OPTICAL DEVICE AND MANUFACTURING METHOD OF THE SAME - Provided is an optical integrated device comprising a first waveguide that is formed on a substrate and includes a first optical path; an electrode formed on the first waveguide; a second waveguide that is formed on the substrate and includes a second optical path; and a transparent waveguide that is formed on the substrate between the first waveguide and the second waveguide, and includes a transparent core that serves as an optical path and is formed of a material having higher bandgap energy than the first optical path. The electrode is formed above the first waveguide and is not formed above the transparent waveguide, and elements including the first waveguide are optically active elements that operate according to current injected thereto. | 03-14-2013 |
Hirotatsu Kitabatake US
Patent application number | Description | Published |
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20150298534 | DRIVE DEVICE FOR HYBRID VEHICLE - A drive device for hybrid vehicle includes: a planetary gear mechanism; a first rotating machine coupled to a sun gear of the planetary gear mechanism; an engine and a one-way clutch coupled to a carrier of the planetary gear mechanism; a second rotating machine and a drive wheel coupled to a ring gear of the planetary gear mechanism; and a braking device. The drive device relatively changes a rotation speed of the first rotating machine to a rotation speed of a positive rotation side to perform braking by the braking device in response to a braking command. | 10-22-2015 |
Hirotatsu Matsuo, Kamakura-Shi, Kanagawa JP
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20130108909 | BATTERY MODULE | 05-02-2013 |
Hirotatsu Okumura, Toyokawa-Shi JP
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20130222913 | OPTICAL COMPONENT AND METHOD OF MANUFACTURING THE SAME - An optical component includes: a plastic base which has a convex surface and a concave surface; and a multilayer film which is disposed on at least the convex surface of the plastic base. The multilayer film has an average reflectivity of 2% to 10% over a wavelength range of 400 nm to 500 nm. | 08-29-2013 |
Hirotatsu Tanaka, Kumamoto JP
Patent application number | Description | Published |
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20140117212 | SEMICONDUCTOR DEVICE - A semiconductor device that includes: a first trans-impedance amplifier that converts a first current signal generated by a first photodiode, into which an optical signal is input, into a first voltage signal; a second trans-impedance amplifier that converts a second current signal generated by a second photodiode, to which an optical signal is blocked, into a second voltage signal; a peak hold circuit that holds the peak value of the first voltage signal; a comparator that outputs a pulse on the basis of the first and second voltage signals; and a threshold current setting circuit that draws out a threshold current, which is proportional to a reference current generated on the basis of a voltage difference between a peak voltage output by the peak hold circuit and a reference voltage at the output node of the second photodiode, from the connection between the second photodiode and the second trans-impedance amplifier. | 05-01-2014 |