Patent application number | Description | Published |
20090124172 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, CHEMICAL MECHANICAL POLISHING METHOD, KIT FOR CHEMICAL MECHANICAL POLISHING, AND KIT FOR PREPARING AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING - A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, (C) an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid, (D) an oxidizing agent, and (E) a nonionic surfactant having a triple bond, the mass ratio (WB/WC) of the amount (WB) of the component (B) to the amount (WC) of the component (C) being 0.01 or more and less than 2, and the component (E) being shown by the following general formula (1), | 05-14-2009 |
20090221213 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE - A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12. | 09-03-2009 |
20090302266 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, CHEMICAL MECHANICAL POLISHING METHOD, AND KIT FOR PREPARING AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING - A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) an organic acid, (C) a water-soluble polymer, (D) an oxidizing agent, and (E) water, the water-soluble polymer (C) having a weight average molecular weight of 50,000 to 5,000,000. | 12-10-2009 |
20110053462 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD - A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica particles (A) determined by ICP atomic emission spectrometry, ICP mass spectrometry, or ammonium ion quantitative analysis using ion chromatography having a relationship in which the sodium content is 5 to 500 ppm and at least one of the potassium content and the ammonium ion content is 100 to 20,000 ppm. | 03-03-2011 |
20110081780 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD - A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B1) an organic acid, the number of silanol groups included in the silica particles (A) calculated from a signal area of a | 04-07-2011 |
Patent application number | Description | Published |
20080318427 | CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION PREPARATION SET, METHOD OF PREPARING CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION, CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION, AND CHEMICAL MECHANICAL POLISHING METHOD - A chemical mechanical polishing aqueous dispersion preparation set including: a first composition which includes colloidal silica having an average primary particle diameter of 15 to 40 nm and a basic compound and has a pH of 8.0 to 11.0; and a second composition which includes poly(meth)acrylic acid and an organic acid having two or more carbonyl groups other than the poly(meth)acrylic acid and has a pH of 1.0 to 5.0. | 12-25-2008 |
20090239373 | CHEMICAL MECHANICAL POLISHING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer. | 09-24-2009 |
20100075501 | CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD - A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (M | 03-25-2010 |
20100252774 | CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION, METHOD OF PREPARING THE SAME, CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION PREPARATION KIT, AND CHEMICAL MECHANICAL POLISHING METHOD - A chemical mechanical polishing aqueous dispersion that is used to polish a polishing target that includes a wiring layer that contains tungsten, the chemical mechanical polishing aqueous dispersion including: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica having an average particle diameter calculated from a specific surface area determined by the BET method of 10 to 60 nm, the content (M | 10-07-2010 |
20110250756 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, CHEMICAL MECHANICAL POLISHING METHOD, KIT FOR CHEMICAL MECHANICAL POLISHING, AND KIT FOR PREPARING AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING - A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, (C) an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid, (D) an oxidizing agent, and (E) a nonionic surfactant having a triple bond, the mass ratio (WB/WC) of the amount (WB) of the component (B) to the amount (WC) of the component (C) being 0.01 or more and less than 2, and the component (E) being shown by the following general formula (1), | 10-13-2011 |
20140011360 | CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE - A chemical mechanical polishing aqueous dispersion of the invention includes (A) a first water-soluble polymer having a weight average molecular weight of 500,000 to 2,000,000 and including a heterocyclic ring in its molecule, (B) a second water-soluble polymer or its salt having a weight average molecular weight of 1000 to 10,000 and including one group selected from a carboxyl group and a sulfonic group, (C) an oxidizing agent, and (D) abrasive grains, and has a pH of 7 to 12. | 01-09-2014 |