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Hirotaka Ito

Hirotaka Ito, Shizuoka JP

Patent application numberDescriptionPublished
20090192108Gene overexpressed in cancer - Disclosed are a protein encoded by a gene having a nucleotide sequence represented by any of SEQ ID NOs: 1 to 65 or a fragment thereof, an antibody recognizing the protein or antigen-binding fragment thereof, and a polynucleotide having a sequence comprising at least 12 consecutive nucleotides of a nucleotide sequence represented by any of SEQ ID NOs: 1 to 65 or a nucleotide sequence complementary thereto. The gene and the protein of the invention is useful for diagnosing and treating cancer.07-30-2009
20110082284Gene overexpressed in cancer - Disclosed are a protein encoded by a gene having a nucleotide sequence represented by any of SEQ ID NOs: 1 to 65 or a fragment thereof, an antibody recognizing the protein or antigen-binding fragment thereof, and a polynucleotide having a sequence comprising at least 12 consecutive nucleotides of a nucleotide sequence represented by any of SEQ ID NOs: 1 to 65 or a nucleotide sequence complementary thereto. The gene and the protein of the invention is useful for diagnosing and treating cancer.04-07-2011

Patent applications by Hirotaka Ito, Shizuoka JP

Hirotaka Ito, Kobe-Shi JP

Patent application numberDescriptionPublished
20080220109MOLDING TOOL - A molding tool has a base surface hard to be roughened by an etching process for removing a worn DLC film. The molding tool is provided with an intermediate film coating a base surface of the molding tool, and a diamondlike carbon film coating the intermediate film. The intermediate film is formed of a material having a composition represented by (Cr09-11-2008
20090186206DIAMOND-LIKE CARBON FILM FOR SLIDING PARTS AND METHOD FOR PRODUCTION THEREOF - A diamond-like carbon film for sliding parts which is applied to the sliding surface of sliding parts, the diamond-like carbon film including at least two layers, one being a lower layer of diamond-like carbon (referred to as DLC hereinafter) and the other being an upper layer of DLC placed thereon, wherein the lower layer has a hardness no lower than 20 GPa and no higher than 45 GPa, a Young's modulus no lower than 250 GPa and no higher than 450 GPa, and a thickness no smaller than 0.2 μm and no larger than 4.0 μm, and the upper layer has a hardness no lower than 5 GPa and lower than 20 GPa, a Young's modulus no lower than 60 GPa and no higher than 240 GPa, and a thickness no smaller than 1.0 μm and no larger than 10 μm. The diamond-like carbon film has both good durability and low frictional coefficient.07-23-2009
20100247885LAMINATED FILM AND LAMINATED FILM-COATED MEMBER - A laminated film is provided which exhibits excellent durability even when formed over a surface of a member (in particular, sliding member) to be used under a high pressure of contacted surface of 2.0 GPa or more. The laminated film includes an intermediate layer which contains one or more compounds selected from the group consisting of a carbide, a boride, and a boron carbide compound of a metal element, and which has a hardness measured by a nanoindentation method (hereinafter referred to as a “nanoindentation hardness”) of not less than 20 GPa nor more than 35 GPa and a thickness of not less than 5 μm nor more than 10 μm, and a diamond-like carbon film which is formed over the intermediate layer, and which has a nanoindentation hardness of not less than 25 GPa nor more than 35 GPa and a thickness of not less than 0.3 μm nor more than 1.0 μm.09-30-2010
20110067151CONTACT PROBE PIN FOR SEMICONDUCTOR TEST APPARATUS - It is an object to provide a contact probe pin for a semiconductor test apparatus, including an amorphous carbon type conductive film formed on the probe pin base material surface. The conductive film is excellent in tin adhesion resistance of preventing tin which is the main component of solder from adhering to the contact part of the probe pin during contact between the probe pin and solder. The contact probe pin for a semiconductor test apparatus, includes an amorphous carbon type conductive film formed on the conductive base material surface. The amorphous carbon type conductive film has an outer surface with a surface roughness (Ra) of 6.0 nm or less, a root square slope (RΔq) of 0.28 or less, and a mean value (R) of curvature radii of concave part tips of the surface form of 180 nm or more, in a 4-μm03-17-2011
20110121459SEMICONDUCTOR INTERCONNECTION - Provided is a semiconductor interconnection wherein a barrier layer different from a TiO05-26-2011

Patent applications by Hirotaka Ito, Kobe-Shi JP

Hirotaka Ito, Hyogo JP

Patent application numberDescriptionPublished
20100035118ALLOY FILM FOR A METAL SEPARATOR FOR A FUEL CELL, A MANUFACTURING METHOD THEREOF AND A TARGET MATERIAL FOR SPUTTERING, AS WELL AS A METAL SEPARATOR, AND A FUEL CELL - The present invention concerns an alloy film for a metal separator for a fuel cell characterized by containing at least one noble metal element selected from Au and Pt and at least one non-noble metal element selected from the group consisting of Ti, Zr, Nb, Hf, and Ta, at a content ratio of noble metal element/non-noble metal element of 35/65 to 95/5, and having a film thickness of 2 nm or more. The present invention also relates to a manufacturing method of an alloy film for the metal separator for the fuel cell and a target material for sputtering, as well as the metal separator and the fuel sell. The alloy film for the metal separator for the fuel cell according to the invention is excellent in the corrosion resistance, has low contact resistance, can maintain the low contact resistance for a long time even in a corrosive environment, and is excellent further in the productivity.02-11-2010
20100052171CU WIRE IN SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - A Cu wire in a semiconductor device according to the present invention is a Cu wire embedded into wiring gutters or interlayer connective channels formed in an insulating film on a semiconductor substrate and the Cu wire comprises: a barrier layer comprising TaN formed on the wiring gutter side or the interlayer connective channel side; and a wire main body comprising Cu comprising one or more elements selected from the group consisting of Pt, In, Ti, Nb, B, Fe, V, Zr, Hf, Ga, Tl, Ru, Re, and Os in a total content of 0.05 to 3.0 atomic percent. The Cu wire in a semiconductor device according to the present invention is excellent in adhesiveness between the wire main body and the barrier layer.03-04-2010
20100119913METAL SEPARATOR FOR FUEL CELL AND MANUFACTURING METHOD THEREOF - A metal separator 05-13-2010
20110143976NITROGEN-CONTAINING AMORPHOUS CARBON-TYPE FILM, AMORPHOUS CARBON-TYPE LAMINATION FILM, AND SLIDING MEMBER - Provided is a nitrogen-containing amorphous carbon film exhibiting excellent durability even when formed on the surface of a sliding member used under high surface pressure or under a lubricating oil environment. The nitrogen-containing amorphous carbon film is formed by physical evaporation onto the sliding surface of a sliding member and contains 8.0 to 12.0 atomic % of hydrogen and 3.0 to 14.0 atomic % of nitrogen. The nitrogen-containing amorphous carbon film is effective when, for instance, formed on at least one sliding surface of a sliding member, such as a sliding part of an automobile engine.06-16-2011
20110147753DISPLAY DEVICE, COPPER ALLOY FILM FOR USE THEREIN, AND COPPER ALLOY SPUTTERING TARGET - Disclosed is a Cu alloy film for a display device that has high adhesion to a glass substrate while maintaining a low electric resistance characteristic of Cu-based materials. The Cu alloy film is wiring in direct contact with a glass substrate on a board and contains 0.1 to 10.0 atomic % in total of one or more elements selected from the group consisting of Ti, Al, and Mg. Also disclosed is a display device comprising a thin-film transistor that comprises the Cu alloy film. In a preferred embodiment of the display device, the thin-film transistor has a bottom gate-type structure, and a gate electrode and scanning lines in the thin-film transistor comprise the Cu alloy film and are in direct contact with the glass substrate.06-23-2011

Hirotaka Ito, Tokyo JP

Patent application numberDescriptionPublished
20090324491Diagnosis and Treatment of Cancer Using Anti-EREG Antibody - Methods that entail detection of an epiregulin (EREG) protein for cancer diagnosis are disclosed. In colon cancer, lung adenocarcinoma, pancreatic cancer, stomach cancer, and kidney cancer, the gene and protein expressions of EREG were frequently found to be elevated. Antibodies that recognize an EREG protein are used for diagnosing or treating cancer in the present invention. Pharmaceutical compositions, cell proliferation inhibitors, and anticancer agents containing an EREG-binding antibody as an active ingredient are also disclosed. Methods of inducing cell damage in EREG-expressing cells and methods of suppressing the proliferation of EREG-expressing cells by contacting the EREG-expressing cells with EREG-binding antibodies are also disclosed.12-31-2009
20100092457Diagnosis and Treatment of Cancer Using Anti-Desmoglein-3 Antibodies - Methods that involve detection of a DSG3 protein for diagnosing cancer are disclosed. In lung cancer, the expression of DSG3 was found to be enhanced at very high frequency at the gene level and protein level. Methods of the present invention can be carried out using an antibody that recognizes a DSG3 protein. Pharmaceutical compositions, cell growth inhibitors, and anticancer agents containing a DSG3-binding antibody as an active ingredient are also disclosed. Methods of inducing cell damage in DSG3-expressing cells and methods of suppressing proliferation of DSG3-expressing cells by contacting the DSG3-expressing cells with DSG3-binding antibodies are also disclosed.04-15-2010

Patent applications by Hirotaka Ito, Tokyo JP