Hirosi Sobukawa
Hirosi Sobukawa, Kanagawa JP
Patent application number | Description | Published |
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20080302963 | SHEET BEAM-TYPE TESTING APPARATUS - An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system; specifically, the electron beam apparatus comprises beam generating means | 12-11-2008 |
20080308729 | Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former - A substrate inspection apparatus | 12-18-2008 |
20090032708 | Inspection system by charged particle beam and method of manufacturing devices using the system - An inspection apparatus by an electron beam comprises: an electron-optical device | 02-05-2009 |
20090039262 | ELECTRON BEAM APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE APPARATUS - The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals. | 02-12-2009 |
20090050822 | Electron beam apparatus and method of manufacturing semiconductor device using the apparatus - The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system. | 02-26-2009 |
20110104830 | APPARATUS FOR INSPECTION WITH ELECTRON BEAM, METHOD FOR OPERATING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING FORMER - A substrate inspection apparatus | 05-05-2011 |
20120032079 | INSPECTION SYSTEM BY CHARGED PARTICLE BEAM AND METHOD OF MANUFACTURING DEVICES USING THE SYSTEM - An inspection apparatus by an electron beam comprises: an electron-optical device | 02-09-2012 |
20140034831 | INSPECTION SYSTEM BY CHARGED PARTICLE BEAM AND METHOD OF MANUFACTURING DEVICES USING THE SYSTEM - An inspection apparatus by an electron beam comprises: an electron-optical device | 02-06-2014 |
Hirosi Sobukawa, Kanagawa-Ken JP
Patent application number | Description | Published |
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20090101816 | Testing apparatus using charged particles and device manufacturing method using the testing apparatus - A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source | 04-23-2009 |
20100237243 | Testing apparatus using charged particles and device manufacturing method using the testing apparatus - A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source | 09-23-2010 |
20140158885 | TESTING APPARATUS USING CHARGED PARTICLES AND DEVICE MANUFACTURING METHOD USING THE TESTING APPARATUS - A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source | 06-12-2014 |
Hirosi Sobukawa, Tokyo JP
Patent application number | Description | Published |
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20090014649 | ELECTRON BEAM APPARATUS - Secondary electrons emitted from a sample (W) by an electron beam irradiation is deflected by a beam separator ( | 01-15-2009 |
20090026368 | APPARATUS AND METHOD FOR INSPECTING SAMPLE SURFACE - Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device. | 01-29-2009 |
20090050802 | METHOD AND APPARATUS FOR INSPECTING SAMPLE SURFACE - Provided is a method and an apparatus for inspecting a sample surface with high accuracy. | 02-26-2009 |
20090212213 | PROJECTION ELECTRON BEAM APPARATUS AND DEFECT INSPECTION SYSTEM USING THE APPARATUS - A sample is evaluated at a high throughput by reducing axial chromatic aberration and increasing the transmittance of secondary electrons. Electron beams emitted from an electron gun | 08-27-2009 |
20100213370 | Electron Beam Apparatus - The present invention provides an electron beam apparatus which can capture images at high speeds even using an area sensor which senses a small number of frames per second, by deflecting a primary electron beam by a deflector to irradiate each of sub-visual fields which are formed by dividing an evaluation area on a sample surface, and detecting secondary electrons containing information on the sample surface in each of the sub-visual fields by a detecting device. For this purpose, the detecting device | 08-26-2010 |
Hirosi Sobukawa, Isehara-Shi JP
Patent application number | Description | Published |
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20080315090 | Objective lens, electron beam system and method of inspecting defect - An electron beam system or a method for manufacturing a device using the electron beam system in which an electron beam can be irradiated at a high current density and a ratio of transmittance of a secondary electron beam of an image projecting optical system can be improved and which can be compact in size. The surface of the sample S is divided into plural stripe regions which in turn are divided into rectangle-shaped main fields. The main field is further divided into plural square-shaped subfields. The irradiation with the electron beams and the formation of a two-dimensional image are repeated in a unit of the subfields. A magnetic gap formed by the inner and outer magnetic poles of the objective lens is formed on the side of the sample, and an outer side surface and an inner side surface of each of the inner magnetic pole and the outer magnetic pole, respectively, forming the magnetic gap have each part of a conical shape with a convex having an angle of 45° or greater with respect to the optical axis. | 12-25-2008 |
Hirosi Sobukawa, Ohta-Ku JP
Patent application number | Description | Published |
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20120145921 | METHOD AND APPARATUS FOR INSPECTING SAMPLE SURFACE - Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface. | 06-14-2012 |
20130313429 | METHOD AND APPARATUS FOR INSPECTING SAMPLE SURFACE - Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface. | 11-28-2013 |
Hirosi Sobukawa, Zama-Shi JP
Patent application number | Description | Published |
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20140319346 | INSPECTION SYSTEM BY CHARGED PARTICLE BEAM AND METHOD OF MANUFACTURING DEVICES USING THE SYSTEM - An inspection apparatus by an electron beam comprises: an electron-optical device | 10-30-2014 |
20140367570 | SUBSTRATE INSPECTION METHOD AND A SUBSTRATE PROCESSING METHOD - There is provided a substrate inspection method. The method includes: maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; positioning the substrate on a stage in the inspection chamber; selecting an evaluation parameter according to a kind of said processing apparatus; and determining inspection regions of the substrate so that an inspection time required per a lot of the substrate is equal to a processing time spent for said processing step required per a lot of the substrate. The method also includes radiating a primary electron beam from an electron gun; deflecting the primary electron beam with an E*B unit; irradiating said inspection regions of the substrate with the deflected primary electron beam; and projecting secondary electrons emitted from said substrate through the E*B unit onto a detector with a secondary optical system. | 12-18-2014 |