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Hiroshi Yoshioka
Hiroshi Yoshioka, Yokohama JP
| Patent application number | Description | Published |
|---|---|---|
| 20110032783 | SEMICONDUCTOR STORAGE APPARATUS, AND METHOD AND SYSTEM FOR BOOSTING WORD LINES - A semiconductor storage apparatus includes: a word line coupled to a cell transistor; a first capacitor having a first end coupled to the word line; a boost driver coupled to a second end of the first capacitor; a voltage-drop circuit configured to generate a given voltage drop between a first voltage and a second voltage; and a boost-drive circuit configured to boost a voltage at the second end from the second voltage to the first voltage. | 02-10-2011 |
Hiroshi Yoshioka, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20110024858 | SOLID-STATE IMAGING DEVICE AND METHOD FOR PRODUCING THE SAME - A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate. | 02-03-2011 |
Hiroshi Yoshioka, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20100186298 | PLANT CULTIVATION SYSTEM - [Problems] To provide a system for producing safe and high nutrition vegetables at low cost. | 07-29-2010 |
Hiroshi Yoshioka, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080205111 | Semiconductor memory device and defect remedying method thereof - A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays. | 08-28-2008 |
| 20080216801 | FUEL SUPPLY SYSTEM - A fuel supply system provided in a fuel tank includes: a fuel pump that sucks fuel reserved within the fuel tank via a suction filter and discharges the sucked fuel; a pressure regulator that maintains pressure of the fuel discharged from the fuel pump within a predetermined range; a pump holder that holds the fuel pump and the pressure regulator; and a cushioning rubber extending in radial and axial directions of the fuel pump between the pump holder and the fuel pump for damping vibrations associated with driving of the fuel pump. Excess fuel is introduced in a flow path from the pressure regulator to the suction filter. The flow path includes: a gap defined between the pump holder and the cushioning rubber; and a gap defined between the cushioning rubber and the fuel pump. | 09-11-2008 |
| 20080216904 | FUEL SUPPLY SYSTEM - A fuel supply system includes: a flange mounted at an upper opening in a fuel tank; a fuel pump that discharges fuel in the fuel tank; a high-pressure filter that filters fuel discharged from the fuel pump; and a filter case that accommodates the high-pressure filter and includes an upper case and a lower case, the upper case integrally formed with the flange. The fuel pump is fitted to an underside of the lower case to be positioned substantially coaxial with the high-pressure filter. | 09-11-2008 |
Hiroshi Yoshioka, Hadano-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080213869 | Hydrogel for separating cell and method of separating cell - Cell/organism is separated by using a hydrogel capable of selectively moving a cell in accordance with a difference in the concentration of a physiologically active substance. The invention provides a hydrogel capable of conducting separation (fractionation, differential separation, fractional collection) of cell/organism having a variety of taxes, which could not be attained in the prior art. | 09-04-2008 |
Hiroshi Yoshioka, Kyoto JP
| Patent application number | Description | Published |
|---|---|---|
| 20080203182 | Fluid supply nozzle, substrate processing apparatus and substrate processing method - A fluid supply nozzle includes a fluid flow-in section into which a fluid flows in, a reservoir section for storing the fluid, a flow velocity control wall provided between the fluid flow-in section and the reservoir section and including an orifice for making the fluid flow in the reservoir section while reducing a flow velocity, and a discharging section including a slit for discharging the fluid with pressure of the fluid applied to the reservoir section. A substrate processing apparatus is formed so as to include the fluid supply nozzle. Moreover, a substrate processing method includes the step of discharging a fluid in a single-layered, continuous film to supply the fluid onto a substrate. Thus, the substrate is processed. To perform this method, the fluid supply nozzle of the present invention can be used. | 08-28-2008 |
Hiroshi Yoshioka, Chiba JP
| Patent application number | Description | Published |
|---|---|---|
| 20120064701 | CRYSTALLINE SEMICONDUCTOR FILM MANUFACTURING METHOD AND CRYSTALLINE SEMICONDUCTOR FILM MANUFACTURING APPARATUS - A semiconductor film manufacturing method includes: forming a metal layer above the substrate; forming a gate electrode in each of pixels by patterning a metal layer; forming a gate insulating firm on the gate electrode; forming an amorphous semiconductor film on the gate insulating film; and crystallizing the amorphous semiconductor film by irradiating the amorphous semiconductor film with a laser beam, and a laser irradiation width of the laser beam corresponds to n times a width of each pixel (n is an integer of 2 or above), a laser energy intensity is higher in one end portion of the laser irradiation width than in the other end portion, and in the crystallizing, the laser energy intensity of the laser beam is inverted in increments of n pixels, alternately between one of the end portions of the laser irradiation width of the laser beam and the other end portion. | 03-15-2012 |