Patent application number | Description | Published |
20130281518 | METHOD OF TREATING INFLAMMATORY LUNG DISEASE WITH SUPPRESSORS OF CPG OLIGONUCLEOTIDES - The present disclosure relates to oligodeoxynucleotides that suppress an immune response. Methods are disclosed for inhibiting or treating inflammatory lung disease by administering a therapeutically effective amount of a suppressive oligodeoxynucleotide. | 10-24-2013 |
20150084167 | EBG STRUCTURE, SEMICONDUCTOR DEVICE, AND CIRCUIT BOARD - An EBG structure of an embodiment includes an electrode plane, a first insulating layer provided on the electrode plane, a first metal patch provided on the first insulating layer, a second metal patch provided on the first insulating layer, a second insulating layer provided on the first and second metal patches, an interconnect layer provided on the second insulating layer, a third insulating layer provided on the interconnect layer, a first via connected to the electrode plane and the first metal patch, and a second via connected to the electrode plane and the second metal patch. The second metal patch is separately adjacent to the first metal patch. The interconnect layer has a first opening and a second opening. The first via penetrates through the first opening. The second via penetrates through the second opening. | 03-26-2015 |
20150084208 | CONNECTION MEMBER, SEMICONDUCTOR DEVICE, AND STACKED STRUCTURE - A connection member according to an embodiment includes a dielectric material, a penetrating via penetrating through the dielectric material, a first metal plane provided in the dielectric material, the first metal plane being perpendicular to an extension direction of the penetrating via, the first metal plane crossing the penetrating via, and a second metal plane provided n or on the dielectric material in parallel with the extension direction of the penetrating via, the second metal plane connected to the first metal plane. | 03-26-2015 |
20150201488 | WIRING BOARD AND METHOD OF MANUFACTURING THE SAME - A wiring board of an embodiment includes a through via, a first insulating film disposed around the through via, a second insulating film disposed around the first insulating film, a third insulating film disposed around the second insulating film and a resin disposed around the third insulating film. The resin includes fillers. The second insulating film has a relative permittivity lower than a relative permittivity of the first insulating film. The third insulating film has a relative permittivity higher than a relative permittivity of the second insulating film. | 07-16-2015 |
20150270245 | SEMICONDUCTOR DEVICE AND ELECTRONIC CIRCUIT DEVICE - A semiconductor device according to an embodiment includes a first semiconductor unit including a plurality of first semiconductor chips, an organic resin provided between the first semiconductor chips, a wiring layer provided above the first semiconductor chips to electrically connect the first semiconductor chips to each other, and a plurality of connecting terminals provided on an upper portion of the wiring layer and a second semiconductor unit fixed to a wiring layer side of the first semiconductor unit, the second semiconductor unit fixed to a region sandwiched between the connecting terminals, the second semiconductor unit having a second semiconductor chip, the second semiconductor unit electrically connected to the first semiconductor unit. | 09-24-2015 |
20150279802 | SEMICONDUCTOR DEVICE - A semiconductor device according to an embodiment includes a semiconductor chip, a cap disposed to face the semiconductor chip, and having a through-hole electrode arranged in a through hole, and a bump electrode provided between the semiconductor chip and the cap, wherein the bump electrode is in a protruding shape connecting the semiconductor chip and the through-hole electrode, and wherein at least a portion of the bump electrode is included in the through-hole electrode, and electrically connected thereto, so that the adhesive performance between the cap and the bump electrode can be increased. | 10-01-2015 |
20150348924 | SEMICONDUCTOR DEVICE - According to an embodiment, a semiconductor device comprises an insulative resin, an interconnect, a plurality of semiconductor elements, a first conductive unit, a first connector, and a first metal layer. The insulative resin includes a first region and a second region. At least a portion of the interconnect is arranged with at least a portion of the first region in a first direction. The first conductive unit pierces the second region in the first direction. At least a portion of the first connector is arranged with at least a portion of the first conductive unit in the first direction. At least a portion of the first connector is arranged with at least a portion of the interconnect in a second direction intersecting the first direction. The first metal layer is provided between the first conductive unit and the first connector. The first metal layer contacts the insulative resin. | 12-03-2015 |
20150348937 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device includes an insulative resin, an interconnect, a plurality of semiconductor elements, and a first metal member. The insulative resin includes a first region and a second region. The interconnect is arranged with the first region in a first direction. The first direction intersects a direction from the first region toward the second region. The plurality of semiconductor elements is provided between the first region and the interconnect. At least one of the plurality of semiconductor elements is electrically connected to the interconnect. The first metal member includes a first through-portion and a first end portion. The first through-portion pierces the second region in the first direction. The first end portion is connected to the first through-portion. A width of the first end portion is wider than a width of the first through-portion in a second direction intersecting the first direction. | 12-03-2015 |