Patent application number | Description | Published |
20090029293 | MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR APPARATUS - A manufacturing method of a silicon carbide semiconductor apparatus is provided. The method includes forming a first resist pattern on a surface of a silicon carbide layer formed on a silicon carbide substrate, implanting a first conduction type impurity ion in the silicon carbide layer on which the first resist pattern is formed, forming a second resist pattern by decreasing a width of the first resist pattern with etching and forming a deposition layer on the surface of the silicon carbide layer which is not covered with the second resist pattern, and implanting a second conduction type impurity ion in the silicon carbide layer on which the second resist pattern is formed, through the deposition layer. | 01-29-2009 |
20090085819 | Radio system, radio apparatus, and antenna device - According to an aspect of the present invention, there is provided a radio system including: a first radio apparatus that has a first loop antenna; and a second radio apparatus that has a second loop antenna and that performs a radio communication with the first radio apparatus when the second loop antenna is opposed with the first loop antenna, wherein the second radio apparatus has a shield member that is formed of a magnetic substance and disposed to shield at least a portion of the second loop antenna with respect to the first loop antenna when the radio communication is performed. | 04-02-2009 |
20090189742 | Radio communication device and radio communication system - According to one embodiment, a radio communication device includes: an antenna that communicates with a non-contact IC card by a radio signal having a predetermined frequency, the antenna having an unique resonance frequency in vicinity of the predetermined frequency; a frequency changer that shifts a resonance frequency of the antenna from the vicinity of the predetermined frequency to a high resonance frequency higher than the unique resonance frequency when the frequency changer is activated; a controller that controls whether or not the frequency changer is activated. | 07-30-2009 |
20090231691 | OBSERVATION SYSTEM AND OBSERVATION APPARATUS - When application software running on a PC is in the state of being terminated, a switch unit is turned OFF with the control of a CPU and individual motors, and in this state, a light source is not supplied with a motor/lamp-use power source. In this state, however, the CPU and individual I/Fs are supplied with a logic-use power source. Therefore, the switch unit is turned ON when the application software is started, and an initialization process for an individual electrically driven unit is no longer required. | 09-17-2009 |
20100027890 | IMAGE INFORMATION PROCESSING METHOD AND APPARATUS - An eye-gaze direction calculation unit calculates the eye-gaze direction in an input facial image of a person by carrying out prescribed operation processing based on iris shape data output from an iris detection unit and face-direction measurement data output from a face-direction measurement unit. The eye-gaze direction of the facial image of the person can be measured on the basis of accurate iris shape information obtained by an iris shape detection unit. The iris and sclera regions can be estimated on the basis of the detected eyelid contour information, thereby making it possible to accurately estimate the shape of the iris. | 02-04-2010 |
20100031158 | DATA PROCESSING DEVICE, COMPUTER PROGRAM, DATA STORAGE MEDIUM - When unit images UP output for display on a screen of a display device | 02-04-2010 |
20100051700 | RADIO APPARATUS, ANTENNA DEVICE AND RADIO COMMUNICATION SYSTEM FOR CONTACTLESS COMMUNICATION - A radio apparatus configured to perform contactless communication with an external device having a first antenna, upon being arranged opposite the external device, is provided. The radio apparatus includes a case, a second antenna and a conductive element. The case has an outer face arranged opposite the external device upon the radio apparatus being arranged opposite the external device. The second antenna is provided in the case, and at least partially arranged parallel to the outer face. The conductive element is arranged close to and electrically coupled with the first antenna, upon the case being positioned opposite the external device so that the contactless communication may be performed. | 03-04-2010 |
20100090914 | RADIO COMMUNICATION APPARATUS AND METHOD FOR MAKING RADIO COMMUNICATION APPARATUS - A radio communication apparatus configured to be used for first radio communication and second radio communication which are different from each other is provided. The radio communication apparatus has a first antenna, a coupling reduction element, a magnetic material sheet and a second antenna. The first antenna is configured to be used for the first radio communication, and is formed by a conductive line wound in a plane like a coil. The coupling reduction element is formed by a plane-shaped conductor, provided almost parallel to the plane of the first antenna, and configured to be put in a condition of electrical floating. The magnetic material sheet is provided between the first antenna and the coupling reduction element. The second antenna is configured to be used for the second radio communication, and is provided close to at least a portion of the first antenna. | 04-15-2010 |
20100114792 | DATA PROCESSING DEVICE, COMPUTER PROGRAM, DATA STORAGE MEDIUM - When unit images UP output for display on a screen of a display device | 05-06-2010 |
20100131372 | DATA PROCESSING DEVICE, COMPUTER PROGRAM, AND DATA STORAGE MEDIUM - A layout of unit images UP output for display may be modified by a layout operation through an input device | 05-27-2010 |
20100262281 | RELATIONSHIP ANALYSIS METHOD, RELATIONSHIP ANALYSIS PROGRAM, AND RELATIONSHIP ANALYSIS APPARATUS - To obtain a high accuracy marketing analysis result, while reducing an effect of a low accuracy visual line detection processing, a storage unit of a visual line analysis apparatus stores therein, for each commodity, a basic zone including the commodity and an extended zone at least a portion of which, is overlapped with the basic zone. The basic zone and the extended zone are stored in association with each other. An attention degree calculation part of the visual line analysis apparatus compares positional information on a visual line data detected by the visual line detection part and positional information on each zone defined in a zone definition data to calculate an attention degree for each zone, aggregates attention degrees in each zone for each commodity corresponding to the each zone, calculates an attention degree data for each commodity, and stores the calculated data in the storage unit. | 10-14-2010 |
20100305958 | DATA PROCESSING SYSTEM, COMPUTER PROGRAM USED THEREFOR, AND DATA PROCESSING METHOD - A temperature sensing unit senses a plurality of specific temperatures caused by a specific consumable commodity consumed by an ordinary consumer at a specific space, while allowing a behavior storage unit to store q plurality of combinations of the plurality of specific temperatures as a plurality of consumption behaviors of the specific consumable commodity by ordinary consumers. A behavior specifying unit specifies consumption behaviors which match a combination of the plurality of specific temperatures sensed for each piece of the specific consumable commodity, and a data collection unit compiles the specified consumption behavior. Accordingly, data regarding the consumption behaviors of the ordinary consumers, which are uncollectible at the points of time of order intake, production, shipping and selling and so forth of the specific consumable commodity, can be collected. A data processing system capable of efficiently collecting data regarding the consumption behaviors of the specific consumable commodity, such as a cigarette, may be provided. | 12-02-2010 |
20110001209 | SEMICONDUCTOR DEVICE - In a termination structure in which a JTE layer is provided, a level or defect existing at an interface between a semiconductor layer and an insulating film, or a minute amount of adventitious impurities that infiltrate into the semiconductor interface from the insulating film or from an outside through the insulating film becomes a source or a breakdown point of a leakage current, which deteriorates a breakdown voltage. A semiconductor device includes: an n | 01-06-2011 |
20110018685 | FRANCHISE ADD-ON SYSTEM, USER OPERATION TERMINAL AND STORE FRONT STOCK SHELF AND BACKYARD STOCK SHELF USED THEREFOR, AND COMPUTER PROGRAM USED THEREFOR - A store front stock shelf | 01-27-2011 |
20110022488 | FRANCHISE ADD-ON SYSTEM, USER OPERATION TERMINAL AND MANUFACTURER'S MANAGEMENT DEVICE USED THEREFOR, AND COMPUTER PROGRAM USED THEREFOR - A user operation terminal | 01-27-2011 |
20110244931 | MOBILE WIRELESS APPARATUS - According to one embodiment, a mobile wireless apparatus includes: a first housing; and a second housing configured to be slidably connected to the first housing. The first housing includes: a conductor section; and a conducting member configured comprise a conductive material and to be connected to the conductor section. The second housing includes: a ground circuit; a power feed circuit; a slide member configured to comprise a conductive material, to be connected to the ground circuit, and to be slidably engaged with the first housing; and an unbalanced antenna configured to be connected to the power feed circuit. The conducting member is configured to make contact with the slide member when the first housing is opened with respect to the second housing. | 10-06-2011 |
20120028453 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - An object is to provide a method for manufacturing a silicon carbide semiconductor device in which a time required for removing a sacrificial oxide film can be shortened and damage to a surface of the silicon carbide layer can be reduced. The method for manufacturing a silicon carbide semiconductor device includes: (a) performing ion implantation to a silicon carbide layer; (b) performing activation annealing to the ion-implanted silicon carbide layer 2; (c) removing a surface layer of the silicon carbide layer 2, to which the activation annealing has been performed, by dry etching; (d) forming a sacrificial oxide film on a surface layer of the silicon carbide layer, to which the dry etching has been performed, by performing sacrificial oxidation thereto; and (e) removing the sacrificial oxide film by wet etching. | 02-02-2012 |
20120058617 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - The present invention includes steps below: (a) forming, on a drift layer, a first ion implantation mask and a second ion implantation mask individually by photolithography to form a third ion implantation mask, the first ion implantation mask having a mask region corresponding to a channel region and having a first opening corresponding to a source region, the second ion implantation mask being positioned in contact with an outer edge of the first ion implantation mask and configured to form a base region; (b) implanting impurities of a first conductivity type from the first opening with an ion beam using the third ion implantation mask to form a source region in an upper layer part of the silicon carbide drift layer; (c) removing the first ion implantation mask after the formation of the source region; and (d) implanting impurities of a second conductivity type with an ion beam from a second opening formed in the second ion implantation mask after the removal of the first ion implantation mask to form a base region deeper than the source region in the upper layer part of the drift layer. | 03-08-2012 |
20120084014 | MODELING DEVICE, PROGRAM, COMPUTER-READABLE RECORDING MEDIUM, AND METHOD OF ESTABLISHING CORRESPONDENCE - A modeling device is disclosed that easily projects characteristic information obtained from an object onto a differently-shaped object, even if the object, from which the characteristic information is obtained, has a complex shape. A modeling device in one embodiment of the present invention includes a virtually electrifying section to calculate an electric potential at a spot in a heart at the time when a predetermined voltage is applied to the heart, and a projecting section to project a fiber orientation onto a heart model created on the basis of shape information that is input to the input section. The projecting section specifies a spot to be a target of projection on the basis of the electric potential obtained by the virtually electrifying section. Use of the electric potential in specifying the spot makes it possible to easily project the fiber orientation onto any heart having complex and various shapes. | 04-05-2012 |
20120241766 | EPITAXIAL WAFER AND SEMICONDUCTOR ELEMENT - A silicon carbide semiconductor element, including: i) an n-type silicon carbide substrate doped with a dopant, such as nitrogen, at a concentration C, wherein the substrate has a lattice constant that decreases with doping; ii) an n-type silicon carbide epitaxially-grown layer doped with the dopant, but at a smaller concentration than the substrate; and iii) an n-type buffer layer doped with the dopant, and arranged between the substrate and the epitaxially-grown layer, wherein the buffer layer has a multilayer structure in which two or more layers having the same thickness are laminated, and is configured such that, based on a number of layers (N) in the multilayer structure, a doping concentration of a K-th layer from a silicon carbide epitaxially-grown layer side is C·K/(N+1). | 09-27-2012 |
20120319762 | POWER SWITCH - A method for switching between first and second voltages is provided. Initially, a first voltage is provided from a first input terminal to an output terminal through a first MOS transistor, and the first MOS transistor is deactivated. A back-gate of a second MOS transistor is shorted to the output terminal in response to the deactivation of the first MOS transistor and after a settling interval, and the second MOS transistor is activated while its back-gate is shorted to the terminal so as to provide a second voltage from a second input terminal to the output terminal. | 12-20-2012 |
20130020586 | SEMICONDUCTOR DEVICE - A semiconductor device having a low feedback capacitance and a low switching loss. The semiconductor device includes: a substrate; a drift layer formed on a surface of the semiconductor substrate; a plurality of first well regions formed on a surface of the drift layer; a source region which is an area formed on a surface of each of the first well regions and defining, as a channel region, the surface of each of the first well regions interposed between the area and the drift layer; a gate electrode formed over the channel region and the drift layer thereacross through a gate insulating film; and second well regions buried inside the drift layer below the gate electrode and formed to be individually connected to each of the first well regions adjacent to one another. | 01-24-2013 |
20130128980 | MOTION VECTOR PREDICTIVE ENCODING METHOD, MOTION VECTOR DECODING METHOD, PREDICTIVE ENCODING APPARATUS AND DECODING APPARATUS, AND STORAGE MEDIA STORING MOTION VECTOR PREDICTIVE ENCODING AND DECODING PROGRAMS - A motion vector predictive encoding method, a motion vector decoding method, a predictive encoding apparatus, a decoding apparatuses, and storage media storing motion vector predictive encoding and decoding programs are provided, thereby reducing the amount of generated code with respect to the motion vector, and improving the efficiency of the motion-vector prediction. If the motion-compensating mode of the target small block to be encoded is the global motion compensation, the encoding mode of an already-encoded small block is the interframe coding mode, and the motion-compensating mode of the already-encoded small block is the global motion compensation, then the motion vector of the translational motion model is determined for each pixel of the already-encoded small block, based on the global motion vector (steps S | 05-23-2013 |
20130221477 | SEMICONDUCTOR DEVICE - A semiconductor device that can achieve a high-speed operation at a time of switching, and the like. The semiconductor device includes: a p-type buried layer buried within an n | 08-29-2013 |
20130285140 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A trench-gate type semiconductor device that can prevent breakdown of a gate insulating film caused by a displacement current flowing into a protective diffusion layer at a portion of a trench underlying a gate electrode at a turn-off time and simultaneously improves a current density by narrowing a cell pitch. The semiconductor device includes a gate electrode embedded into a trench penetrating a base region. The gate electrode is disposed into a lattice shape in a planar view, and a protective diffusion layer is formed in a drift layer at the portion underlying thereof. At least one of blocks divided by the gate electrode is a protective contact region on which the trench is entirely formed. A protective contact for connecting the protective diffusion layer at a bottom portion of the trench and a source electrode is disposed on the protective contact region. | 10-31-2013 |
20130288467 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device capable of suppressing generation of a high electric field and preventing a dielectric breakdown from occurring, and a method of manufacturing the same. The method of manufacturing a semiconductor device includes (a) preparing an n+ substrate to be a ground constituted by a silicon carbide semiconductor of a first conductivity type, (b) forming a recess structure surrounding an element region on the n+ substrate by using a resist pattern, and (c) forming a guard ring injection layer to be an impurity layer of a second conductivity type in a recess bottom surface and a recess side surface in the recess structure by impurity injection through the resist pattern, and a corner portion of the recess structure is covered with the impurity layer. | 10-31-2013 |
20130331344 | LEARNING MOTIVATION IMPROVERS - The present invention aims to provide antidepressants which are free from the problem of side effects and are excellent in safety. The present invention also aims to provide learning motivation improvers which are useful for improvement of learning motivation and can be ingested continuously. | 12-12-2013 |
20130342217 | MODELING DEVICE, PROGRAM, COMPUTER-READABLE RECORDING MEDIUM, AND METHOD OF ESTABLISHING CORRESPONDENCE - A modeling device is disclosed that easily projects characteristic information obtained from an object onto a differently-shaped object, even if the object, from which the characteristic information is obtained, has a complex shape. A modeling device in one embodiment of the present invention includes a virtually electrifying section to calculate an electric potential at a spot in a heart at the time when a predetermined voltage is applied to the heart, and a projecting section to project a fiber orientation onto a heart model created on the basis of shape information that is input to the input section. The projecting section specifies a spot to be a target of projection on the basis of the electric potential obtained by the virtually electrifying section. Use of the electric potential in specifying the spot makes it possible to easily project the fiber orientation onto any heart having complex and various shapes. | 12-26-2013 |
20140021490 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME - Fabrication of a termination structure in a semiconductor device increases in some cases the numbers of ion implantation processes or of photolithography processes, thus leading to an increase in fabrication costs. To overcome this problem, a semiconductor device is provided which includes an n-type drift layer formed on a semiconductor substrate; an element region formed in a surface portion of the drift layer; a recess formed in a loop in a laterally outer portion of the drift layer, spaced away a predetermined distance from the element region; and a p-type dopant region formed ranging from a bottom of the recess to a position away from the recess and toward the element region, a thickness of the dopant region where no recess is provided being greater than that where the recess is provided. | 01-23-2014 |
20140203393 | SEMICONDUCTOR DEVICE - A semiconductor device having high breakdown voltage and high reliability without forming an embedded injection layer with high position accuracy. The semiconductor device includes a base as an active area of a second conductivity type formed on a surface layer of a semiconductor layer of a first conductivity type to constitute a semiconductor element; guard rings as a plurality of first impurity regions of the second conductivity type formed on the surface layer of the semiconductor layer spaced apart from each other to respectively surround the base in plan view; and an embedded injection layer as a second impurity region of the second conductivity type embedded in the surface layer of the semiconductor layer to connect at least two bottom portions of the plurality of guard rings. | 07-24-2014 |
20140299891 | SEMICONDUCTOR DEVICE - A semiconductor device that can improve reliability while suppressing increase of a conduction loss or a switching loss. In the semiconductor device, when a two-dimensional shape on a main surface of the semiconductor substrate is an unit cell, the shape being a repeating unit of a plurality of well regions periodically disposed in a surface layer of a drift layer, one unit cell and another unit cell adjacent in an x-axis direction are disposed misaligned in a y-axis direction, and one unit cell and another unit cell adjacent in the y-axis direction are disposed misaligned in the x-axis direction. | 10-09-2014 |
20140353686 | SEMICONDUCTOR DEVICE - A semiconductor device having a low feedback capacitance and a low switching loss. The semiconductor device includes: a substrate; a drift layer formed on a surface of the semiconductor substrate; a plurality of first well regions formed on a surface of the drift layer; a source region which is an area formed on a surface of each of the first well regions and defining, as a channel region, the surface of each of the first well regions interposed between the area and the drift layer; a gate electrode formed over the channel region and the drift layer thereacross through a gate insulating film; and second well regions buried inside the drift layer below the gate electrode and formed to be individually connected to each of the first well regions adjacent to one another. | 12-04-2014 |