Patent application number | Description | Published |
20080231791 | Touch Panel - The material utilization efficiency of FPC's is improved, to provide a low cost touch panel. A touch panel | 09-25-2008 |
20080305275 | CVD system and substrate cleaning method - An insulating film deposition chamber | 12-11-2008 |
20090202721 | Method for Thin Film Formation - A method for thin film formation that can form, at a low temperature, a good thin film having a good interfacial property between a silicon substrate and a silicon oxide film and having a low interfacial trap density is provided. | 08-13-2009 |
20090286341 | PIXEL CIRCUIT SUBSTRATE, LIQUID CRYSTAL DISPLAY APPARATUS, METHOD OF MANUFACTURING THE SAME AND PROJECTION DISPLAY APPARATUS - A pixel circuit substrate includes a first interlayer insulating film which is made of an inorganic material at least in a source and drain regions of a thin film transistor. A contact hole is formed in an area above the source and drain regions of a thin film transistor in the first interlayer insulating film. A wiring layer is formed on the first interlayer insulating film, extends to an inner wall and a bottom surface of the contact hole. On a top surface of the wiring layer is formed a recess reflecting the shape of a contact hole. A second interlayer insulating film is formed on the wiring layer, embedded in the recess and has a flat top surface in an area above the thin film transistor. A storage capacitor on the second interlayer insulating film is disposed in the area above the thin film transistor. | 11-19-2009 |
20090286374 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed. | 11-19-2009 |
20100006776 | SEMICONDUCTOR THIN FILM FORMING SYSTEM - A thin film processing method for processing the thin film by irradiating the optical beam to the thin film, wherein one set of irradiation includes the first optical pulse irradiation to the thin film and the second optical pulse irradiation to the thin film which substantially starts with a delay to the first optical pulse irradiation, the one set of irradiation being repetitively carried out for processing the thin film, and the relationship between the first and the second pulse satisfies (the pulse width of the first optical pulse)>(the pulse width of the second optical pulse). Preferably, the relationship between the first and the second pulse satisfies (the irradiation intensity of the first optical pulse)≧(the irradiation intensity of the second optical pulse). A silicon thin film with a small trap state density is thus manufactured by the optical irradiation. | 01-14-2010 |
20100043702 | SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND MANUFACTURING EQUIPMENT OF SEMICONDUCTOR THIN FILM - A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./μm or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 μm or less. | 02-25-2010 |
20110001141 | Semiconductor device, Manufacturing method for the same, and electronic device - A manufacturing method for a semiconductor device, the method including forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film, and forming source/drain regions and a channel region by ion implantation in the polysilicon thin film by using the gate electrode as a mask, forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and forming a first contact to be connected to the thin film transistor through the interlayer dielectric film, forming a silicon hydronitride film on the interlayer dielectric film so as to cover the interconnection layer, forming a lower electrode on this silicon hydronitride film and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film, and forming a ferroelectric layer on the lower electrode. | 01-06-2011 |
20120129323 | SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND MANUFACTURING EQUIPMENT OF SEMICONDUCTOR THIN FILM - A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./μm or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 μm or less. | 05-24-2012 |
20120137693 | POWER PLANT - Provided is a power plant including a gas turbine that uses a fuel gas as a fuel; a fuel gas cooler that cools the fuel gas, which is to be pressurized in a fuel gas compressor and re-circulated, using cooling water; and a dust collection device that separates/removes impurities from the fuel gas that is to be guided to the fuel gas compressor; wherein the power plant further includes heating means that heats the fuel gas that is to be guided to the dust collection device using the fuel gas that has been used to generate an anti-thrust force acting on a rotor of the fuel gas compressor. | 06-07-2012 |
20120186263 | POWER GENERATION PLANT - A power-generation plant | 07-26-2012 |
20130146883 | SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND MANUFACTURING EQUIPMENT OF SEMICONDUCTOR THIN FILM - A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./μm or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 μm or less. | 06-13-2013 |
20140206107 | SEMICONDUCTOR FERROELECTRIC DEVICE, MANUFACTURING METHOD FOR THE SAME, AND ELECTRONIC DEVICE - A manufacturing method for a semiconductor device, the method including forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film, and forming source/drain regions and a channel region by ion implantation in the polysilicon thin film by using the gate electrode as a mask, forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and forming a first contact to be connected to the thin film transistor through the interlayer dielectric film, forming a silicon hydronitride film on the interlayer dielectric film so as to cover the interconnection layer, forming a lower electrode on this silicon hydronitride film and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film, and forming a ferroelectric layer on the lower electrode. | 07-24-2014 |