Patent application number | Description | Published |
20080296580 | SILICON OXIDE FILM, PRODUCTION METHOD THEREFOR AND SEMICONDUCTOR DEVICE HAVING GATE INSULATION FILM USING THE SAME - The present invention provides a high-performance silicon oxide film as a gate insulation film and a semiconductor device having superior electric characteristics. The silicon oxide film according to the present invention includes CO | 12-04-2008 |
20100208187 | Liquid crystal display device and electronic apparatus using the same and manufacturing method thereof - A liquid crystal display device of IPS mode includes an array of pixels arranged in a matrix pattern by crossing a plurality of video signal lines and a plurality of scanning signal lines each other. Each of the pixels is provided with at least a switching element. A transparent insulating film is provided on both signal lines, and a plurality of pixel electrodes, common electrodes and common lines are provided on the transparent insulating film. The common lines are formed in a grid-shaped pattern such that a first group of the common lines is made of a first conductor having lower reflectivity against optical light than that of metal while a second group of the common lines is made of a second conductor including a metal layer such that the first group and the second group are crossing each other along the video signal lines and the scanning signal lines. | 08-19-2010 |
20110013107 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC APPARATUS - A semiconductor device includes a supporting substrate; a semiconductor film on the supporting substrate; a gate insulating film on the semiconductor film; a gate electrode on the gate insulating film; and a source region and a drain region formed by introducing impurity elements to the semiconductor film. The thickness of the semiconductor film is within the range of 20 nm to 40 nm. Low-concentration regions are provided between the source region and a channel forming region, and between the drain region and the channel forming region, respectively. The low-concentration regions each have an impurity concentration smaller than that of the source region and that of the drain region, and the impurity concentration in a lower surface side region on the side of the supporting substrate is smaller than that of an upper surface side region on the opposite side. | 01-20-2011 |
20110024755 | THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR USED FOR THE SAME - A thin film transistor (TFT) substrate includes first and second TFTs on the same substrate. The first TFT has a feature that a lower conductive layer or a bottom gate electrode layer is provided between the substrate and a first insulating layer while an upper conductive layer or a top gate electrode layer is disposed on a second insulating layer formed on a semiconductor layer which is formed on the first insulating layer. The first conductive layer has first and second areas such that the first area overlaps with the first conductive layer without overlapping with the semiconductor layer while the second area overlaps with the semiconductor layer, and the first area is larger than the second area while the second insulating layer is thinner than the first insulating layer. The second TFT has the same configuration as the first TFT except that the gate electrode layer is eliminated. | 02-03-2011 |
20110068343 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME - To achieve TFT having a high light-resistance characteristic with a suppressed light leak current at low cost by simplifying the manufacturing processes. The TFT basically includes: a light-shielding film formed on a glass substrate that serves as an insulating substrate; an insulating film formed on the light-shielding film; a semiconductor film formed on the insulating film; and a gate insulating film formed on the semiconductor film. Each layer of a laminate that is configured with three layers of the light-shielding film, the insulating film, and the semiconductor film is patterned simultaneously. Further, each layer of the laminate is configured with silicon or a material containing silicon. | 03-24-2011 |
20110085182 | IMAGE FORMING APPARATUS - An image forming apparatus includes: a functional element substrate to which a pixel is formed in a predetermined cycle; an opposed substrate formed on the functional element substrate; and an optical device arranged on the opposed substrate, which includes a transparent layer and an optical absorption layer arranged in a cycle of 1/n (n is an integer number) of the cycle of arranging the pixel, and restricts spread of transmitted light. | 04-14-2011 |
20110198607 | THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A thin-film transistor manufactured on a transparent substrate has a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate. The channel region has channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film. The light blocking film is divided across the channel region. Interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d), allowing low the manufacturing cost and suppressed photo leak current. | 08-18-2011 |
20120063009 | LENS SHEET, DISPLAY PANEL, AND ELECTRONIC APPARATUS - To suppress bad shaping generated due to fusion of neighboring cylindrical lenses in a lens sheet formed by using an ultraviolet curable resin, for example. A lens sheet includes: a substrate formed with a transparent material; a plurality of protruded lines provided on the substrate in parallel at a specific pitch; and a plurality of cylindrical lenses, each of which is provided between the plurality of protruded lines on the substrate. The protruded line for forming the lens is designed to be constituted with a set of two lines, i.e., a left protruded line and a right protruded line, to suppress fusion of the neighboring lenses. | 03-15-2012 |
20130069097 | TOP GATE TYPE THIN-FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - The present invention provides a thin-film transistor manufactured on a transparent substrate having a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate; wherein the channel region having channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film; the light blocking film is divided across the channel region; and interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d). Thereby, the cost for manufacturing the thin-film transistor is low, and the photo leak current of the thin-film transistor is suppressed. | 03-21-2013 |
20130182208 | LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC APPARATUS USING THE SAME - A liquid crystal display device of IPS mode includes an array of pixels arranged in a matrix pattern by crossing a plurality of video signal lines and a plurality of scanning signal lines each other. Each of the pixels is provided with at least a switching element. A transparent insulating film is provided on both signal lines, and a plurality of pixel electrodes, common electrodes and common lines are provided on the transparent insulating film. The common lines are formed in a grid-shaped pattern such that a first group of the common lines is made of a first conductor having lower reflectivity against optical light than that of metal while a second group of the common lines is made of a second conductor including a metal layer such that said first group and said second group are crossing each other along said video signal lines and said scanning signal lines. | 07-18-2013 |
20140055722 | LIQUID CRYSTAL DISPLAY DEVICE - To suppress light leakage at the time of dark state, and to provide a liquid crystal display device whose electrodes in the reflection areas can be formed with high precision. The liquid crystal display device has a reflection area within a pixel unit by corresponding at least to a reflection plate forming part, and the reflection area is driven with a lateral electric field mode and normally-white. A driving electrode for forming an electric field to a liquid crystal layer of the reflection area is formed on the reflection plate via an insulating film by using a non-transparent electric conductor. | 02-27-2014 |