Hiroshi Otsuka
Hiroshi Otsuka, Haga-Gun JP
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20110088189 | CLEANING SHEET AND PROCESS FOR PRODUCING THE SAME - A cleaning sheet ( | 04-21-2011 |
Hiroshi Otsuka, Tokyo JP
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20100244041 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An isolation layer for suppressing a leakage current is provided at least between a channel layer and a buffer layer formed under the channel layer in the buffer layer. | 09-30-2010 |
20130020584 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - In the present invention, provided is a semiconductor device, including: a GaN channel layer which is provided on a substrate and through which electrons run; a barrier layer which is provided on the GaN channel layer and which contains at least one of In, Al, and Ga and contains N; a gate electrode which is provided on the barrier layer; and a source electrode and a drain electrode which are provided on the substrate across the gate electrode, in which, in a portion of the barrier layer between the gate electrode and the drain electrode, a magnitude of polarization of the barrier layer is smaller on the gate electrode side than on the drain electrode side. Thus, PAE can be improved by reducing Rd and Cgd simultaneously. | 01-24-2013 |
20130113561 | OUTPUT MODE SWITCHING AMPLIFIER - An output mode switching amplifier, including: a transistor for signal amplification connected between a first node on an input side and a second node on an output side; a bypass path for bypassing the transistor between the first node and the second node; a voltage control circuit for switching whether to apply a bias voltage to the transistor so that a transmission signal is amplified by the transistor or to output a transmission signal via the bypass path without amplifying the transmission signal by the transistor; and a second-harmonic reflection circuit connected to the bypass path, for reflecting a second harmonic of the transmission signal. | 05-09-2013 |
20130175544 | SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - It is an object to attain both high gain and a broad band (that is, to attain both reduction in a gate-drain capacitance and reduction in a source-drain capacitance). Provided is a semiconductor device, including: a GaN channel layer ( | 07-11-2013 |
20130249626 | MULTIPLE POWER MODE AMPLIFIER - A multiple power mode amplifier includes: N amplifiers connected in series via switches; and a control circuit for controlling the N amplifiers in accordance with the output modes. P amplifiers out of the N amplifiers constitute a driver amplifier, and constitute a negative feedback amplifier including a feedback circuit for negatively feeding back its own output signal to its own input side. N−P amplifiers constitute a final stage amplifier connected in series to the negative feedback amplifier in a disconnectable manner. The control circuit is configured to: in a first output mode, disconnect the final stage amplifier from the negative feedback amplifier, and disable the feedback circuit; and in a second output mode, connect the final stage amplifier in series to the negative feedback amplifier, and enable the feedback circuit. | 09-26-2013 |
20140019096 | TRANSISTOR CHARACTERISTIC CALCULATION APPARATUS USING LARGE SIGNAL EQUIVALENT CIRCUIT MODEL - A transistor characteristic calculation apparatus using a large signal equivalent circuit model has a buffer trap circuit provided between a drain terminal and a source terminal such that a parallel circuit including a resistor and a capacitor, a diode, and another parallel circuit including a resistor and a capacitor are in turn connected in series. | 01-16-2014 |
20150035066 | FET CHIP - An FET chip is configured to include an oscillation suppression circuit that has a gate capacitance C formed between a gate electrode 5 | 02-05-2015 |
20150207476 | ANALOG FEEDBACK AMPLIFIER - A comparator | 07-23-2015 |
20150229283 | BROADBAND AMPLIFIER - Parallel capacitors ( | 08-13-2015 |
20150249150 | TRANSISTOR HAVING NITRIDE SEMICONDUCTOR USED THEREIN AND METHOD FOR MANUFACTURING TRANSISTOR HAVING NITRIDE SEMICONDUCTOR USED THEREIN - A portion of an AlN spacer layer of a high electron mobility transistor (GaN HEMI) having a nitride semiconductor used therein is removed only in a region directly below a gate electrode and in a vicinity of the region, and a length of a portion where the AlN spacer layer is not present is sufficiently smaller than a distance between a source electrode and a drain electrode. | 09-03-2015 |
Hiroshi Otsuka, Anjo-Shi JP
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20100192314 | HANDY CLEANERS - One aspect according to the present invention includes a handy cleaner including a cleaner body and a battery pack. The battery pack serves as a power source and includes a lithium-ion battery. The battery pack can be mounted to and removed from a cleaner body without need of operating a cover or the like mounted to the cleaner body. | 08-05-2010 |
20130139348 | HANDY CLEANERS - One aspect according to the present invention includes a handy cleaner including a cleaner body and a battery pack. The battery pack serves as a power source and includes a lithium-ion battery. The battery pack can be mounted to and removed from a cleaner body without need of operating a cover or the like mounted to the cleaner body. | 06-06-2013 |
Hiroshi Otsuka, Wako-Shi JP
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20100148298 | SEMICONDUCTOR DEVICE - A semiconductor device is composed of a pair of semiconductor chips ( | 06-17-2010 |
Hiroshi Otsuka, Tochigi JP
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20100088837 | CLEANING SHEET - A cleaning sheet ( | 04-15-2010 |
20110277258 | CLEANING SHEET - A cleaning sheet ( | 11-17-2011 |
Hiroshi Otsuka, Utsunomiya-Shi JP
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20090294195 | POWER CONTROL UNIT AND HYBRID VEHICLE COMPRISING SAME - A power control unit which comprises a plurality of semiconductor elements including a plurality of high-potential side semiconductor elements and a plurality of low-potential side semiconductor elements, and each having a first face and a second face, a collector terminal or an emitter terminal provided on the first face, or an emitter terminal and a gate terminal provided on the first face; a plurality of bus bars electrically connected with at least one of the semiconductor elements, and forming a power module together with the semiconductor elements; a terminal block having signal lines and a resin mold which supports the signal lines; and an engaging portion provided on at least one of the bus bars, and engaging with a portion of the terminal block, and also supporting the terminal block, the signal lines directly connected with the gate electrodes through the engaging portion. | 12-03-2009 |
Hiroshi Otsuka, Saitama JP
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20090257212 | SEMICONDUCTOR DEVICE - A semiconductor device includes first and second assembled bodies ( | 10-15-2009 |
Hiroshi Otsuka, Kitakyushu-Shi JP
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20090242163 | IMMERSION NOZZLE FOR CONTINUOUS CASTING - An immersion nozzle for continuous casting, including (1) a tubular body with a bottom, the tubular body having an inlet for entry of molten steel disposed at an upper end and a passage extending inside the tubular body downward from the inlet, and (2) a pair of opposing outlets disposed in a sidewall at a lower section of the tubular body so as to communicate with the passage, the nozzle comprising: a pair of opposing ridges horizontally projecting into the passage from an inner wall between the pair of outlets, the inner wall defining the passage. | 10-01-2009 |
20090242592 | IMMERSION NOZZLE FOR CONTINUOUS CASTING - An immersion nozzle for continuous casting including a tubular body, the tubular body having at the upper end an inlet from which molten steel is introduced into a passage extending from the inlet downward inside the tubular body, the tubular body having a bottom and being depressed in cross section at least at a lower section, the lower section having two narrow sidewalls and two broad sidewalls, the narrow sidewalls having a pair of opposing first outlets communicating with the passage, the bottom having a pair of second outlets communicating with the passage. The lower section has ridges projecting into the passage respectively from the inner surfaces of the broad sidewalls between the pair of first outlets. The second outlets are arranged symmetrically about the axis of the tubular body such that the axes of the second outlets cross each other within the passage. | 10-01-2009 |
Hiroshi Otsuka, Anjo JP
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20090223690 | Impact tool - An impact tool includes: a spindle disposed in a housing; an anvil disposed in front of the spindle and rotatably supported by the housing through a metal bearing, a rear surface of the anvil having a bearing hole in which a front end of the spindle is received; an impact mechanism configured to transmit a rotation of the spindle to the anvil; an outer groove formed on an outer periphery of the anvil and opposed to the metal bearing; and a connecting opening radially extending in the anvil and connecting the bearing hole and the outer groove to provide a communication therebetween. The outer groove is formed to have a depth in the range of 3-10% of an outer diameter of the anvil, and the connecting opening opens at a rear end of the outer groove in an axial direction of the anvil. | 09-10-2009 |
Hiroshi Otsuka, Fukuoka JP
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20090145934 | Immersion nozzle - Disclosed is an immersion nozzle, which comprises a vertically-extending pipe-shaped straight nozzle body | 06-11-2009 |
20110277951 | REFRACTORY MATERIAL, CONTINUOUS CASTING NOZZLE USING THE REFRACTORY MATERIAL, PRODUCTION METHODS FOR THE CONTINUOUS CASTING NOZZLE, AND CONTINUOUS CASTING METHODS USING THE CONTINUOUS CASTING NOZZLE | 11-17-2011 |
Hiroshi Otsuka, Saitama-Shi JP
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20080231955 | Image stabilizing actuator and camera furnished therewith - Problem: To provide an actuator capable of preventing damage to spherical bodies and their receiving surfaces when subjected to a shock force. | 09-25-2008 |
20080232789 | Camera - Problem: To provide a camera which, when subjected to a shock force, is capable of preventing damage to spherical bodies and receiving surfaces thereof for supporting a compensating lens. | 09-25-2008 |
20080291540 | Image blur prevention actuator and lens unit and camera equipped therewith - To provide an actuator capable of positioning a spherical body in a predetermined position without causing significant blurring of a formed image. The present invention is an actuator for moving an imaging lens to prevent blurring of an image, comprising a fixed portion ( | 11-27-2008 |
Hiroshi Otsuka, Utsunomiya JP
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20120112537 | Vehicle Drive Unit - A vehicle drive unit includes a motor as a power source, a power control unit supported by a vehicle body, and a three-phase cable that connects the power control unit and the motor. A first end portion of the three-phase cable is connected to the power control unit toward the rear of the vehicle in a direction orthogonal to a rotary axis of the motor, a second end portion of the three-phase cable is connected to the motor toward the front of the vehicle in the orthogonal direction, and a U-shaped swing absorber that is curved to extend in the orthogonal direction is provided between the first end portion and the second end portion of the three-phase cable. | 05-10-2012 |
Hiroshi Otsuka, Gamo-Gun JP
Hiroshi Otsuka, Inagi JP
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20130243006 | RELAY APPARATUS AND RELAY METHOD - A first port included in a relay apparatus transmits a first type of frame to a second relay apparatus. A second port transmits a second type of frame to the second relay apparatus. A control unit specifies on the basis of transfer information that a transfer destination port of the first type of frame which is for accessing a node connected to the second relay apparatus is the first port. After that, the control unit generates the second type of frame including the first type of frame according to a load on the first port. Instead of transmitting the first type of frame from the first port, the control unit transmits the second type of frame from the second port. | 09-19-2013 |
20150120666 | RELAY DEVICE, RELAY METHOD, COMPUTER-READABLE RECODING MEDIUM HAVING STORED THEREIN RELAY PROGRAM, AND RELAY SYSTEM - A relay device includes a first storage unit, a second storage unit and a processor. The processor extracts a duplication pattern, which is an identical portion between data stored in the first storage unit in the past and data received currently. Also, the processor executes a process of storing the currently received data in the first storage unit and a process of associating an identifier with the extracted duplication pattern and storing the duplication pattern and the identifier in the second storage unit. Further, the processor edits data into edited data in which a duplication pattern included in the data has been replaced with the identifier associated with the duplication pattern when the data including a duplication pattern stored in the second storage unit has been received from a first device. Then, the processor transfers the edited data to a second device. | 04-30-2015 |
20150195366 | SWITCHING DEVICE, NON-TRANSITORY COMPUTER READABLE MEDIUM AND ZONING SETTING METHOD - A switching device | 07-09-2015 |
Hiroshi Otsuka, Wako JP
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20140196871 | SEMICONDUCTOR MODULE COOLER AND SEMICONDUCTOR MODULE - A semiconductor module cooler includes a fin which is a heat sink, which is thermally connected to a semiconductor element, and which has one or more notches in an edge at one or more arbitrary positions in a longitudinal direction and one or more convex ribs which are formed on a bottom of a water jacket having a cooling flow path and which fit into the one or more notches at one or more arbitrary positions. By doing so, the efficiency of transferring heat generated by the semiconductor element by a coolant is improved and cooling performance is improved. | 07-17-2014 |
Hiroshi Otsuka, Chiyoda-Ku JP
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20150222231 | MICROWAVE AMPLIFIER DEVICE - A microwave amplifier including: a bias circuit that includes a line having an electrical length of one quarter the wavelength at the frequency configured to be amplified by the microwave amplifier and being connected between the output terminal of an amplifier and a bias voltage source, and a capacitor connected between a terminal where the line is connected to the bias voltage source and a ground that defines the reference potential of the microwave amplifier; and a resonant circuit that includes a resistor and a capacitor connected in series between the ground and the terminal where the line is connected to the bias voltage source. | 08-06-2015 |
Hiroshi Otsuka US
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20150249150 | TRANSISTOR HAVING NITRIDE SEMICONDUCTOR USED THEREIN AND METHOD FOR MANUFACTURING TRANSISTOR HAVING NITRIDE SEMICONDUCTOR USED THEREIN - A portion of an AlN spacer layer of a high electron mobility transistor (GaN HEMI) having a nitride semiconductor used therein is removed only in a region directly below a gate electrode and in a vicinity of the region, and a length of a portion where the AlN spacer layer is not present is sufficiently smaller than a distance between a source electrode and a drain electrode. | 09-03-2015 |