Patent application number | Description | Published |
20080305364 | Magnetic Recording Media and Production Process Thereof - The present invention is a production method for a magnetic recording media in which at least a magnetic layer, a protective layer, and a lubricant layer are sequentially layered onto a non-magnetic substrate | 12-11-2008 |
20080310050 | Magnetic Recording Medium and Production Process Thereof - The present invention provides a magnetic recording medium having superior startup operation and durability as well as satisfactory surface lubricity. The present invention relates to a production process of a magnetic recording medium in which at least a magnetic layer, a protective film layer and a lubricant layer are sequentially laminated on a non-magnetic substrate, wherein the protective film layer is surface treated using a gas activated by plasma generated at a pressure in the vicinity of atmospheric pressure. The present invention also relates to a magnetic recording medium produced according to the aforementioned production process. | 12-18-2008 |
20090001407 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - There is provided a semiconductor light-emitting device having excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device | 01-01-2009 |
20090008672 | LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - There is provided a light-emitting device having high reliability and excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A light-emitting device includes a transparent electrode, wherein a titanium oxide-based conductive film is used for at least one layer of said transparent electrode, an emission wavelength is within a range of 300 to 550 nm, and a photocatalytic reaction-prevention layer is formed so as to cover said titanium oxide-based conductive film. | 01-08-2009 |
20090045433 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND PRODUCTION METHOD THEREOF - The present invention provides a nitride semiconductor light emitting device, which comprises positive and negative electrodes with high adhesion, can output high power, and does not generate heat; specifically, the present invention provides a nitride semiconductor light emitting device comprising at least an ohmic contact layer, a p-type nitride semiconductor layer, a nitride semiconductor light emitting layer, and an n-type nitride semiconductor layer, which are laminated on a plate layer, wherein a plate adhesion layer is formed between the ohmic contact layer and the plate layer, and the plate adhesion layer is made of an alloy comprising 50% by mass or greater of a same component as a main component of an alloy contained in the plate layer. | 02-19-2009 |
20090068499 | MAGNETIC RECORDING MEDIUM, PRODUCTION PROCESS THEREOF, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS - There is provided a magnetic recording medium formed on an aluminum substrate (Al—Mg alloy), provided with texture striations and a plated layer of NiP, which has magnetic recording medium has magnetic anisotropy in the circumferential direction, and has a high retentivity, a high squareness ratio, and favorable electromagnetic transfer characteristics, a production method thereof, and a magnetic recording and reproducing apparatus. The magnetic recording medium comprises at least an orientation control layer, a nonmagnetic undercoat layer, a magnetic layer, and a protective layer in this order on the aluminum substrate. The orientation control layer contains any one or more component types selected from among Co, Ni, and Fe, and any one or more component types selected from among W, Mo, Ta and Nb. | 03-12-2009 |
20090090922 | METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (Vf) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film | 04-09-2009 |
20090097165 | METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM, MAGNETIC RECORDING MEDIUM AND SURFACE TREATMENT APPARATUS - The present invention provides a magnetic recording medium having superior startup operation and durability as well as satisfactory surface lubricity. The present invention relates to a method of manufacturing a magnetic recording medium in which at least a magnetic layer, a protective film layer and a lubricant layer are sequentially laminated on a non-magnetic substrate, wherein the lubricant layer is surface treated using a gas activated by plasma generated at a pressure in the vicinity of atmospheric pressure. The present invention also relates to a magnetic recording medium produced according to the aforementioned manufacturing method. | 04-16-2009 |
20090114933 | GaN BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND LAMP - A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp is provided. In such a method for producing a gallium nitride based compound semiconductor light emitting device, which is a method for producing a GaN based semiconductor light emitting device having at least a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a translucent substrate, on which an uneven pattern composed of a convex shape and a concave shape is formed, the buffer layer is formed by a sputtering method conducted in an apparatus having a pivoted magnetron magnetic circuit and the buffer layer contains AlN, ZnO, Mg, or Hf. | 05-07-2009 |
20090130346 | Magnetic Recording Medium, Production Process Thereof, and Magnetic Recording and Reproducing Apparatus - In a magnetic recording medium which is able to cope with a higher recording density, there is provided a magnetic recording medium which has a higher retentivity and a lower noise, a production process thereof, and a magnetic recording and reproducing apparatus. The magnetic recording medium is characterized in that at least a non-magnetic base layer, a non-magnetic intermediate layer, a magnetic layer, and a protective layer are laminated in this order on a non-magnetic substrate, and at least one of the layers of the non-magnetic base layer is configured by a WX-based alloy or a MoX-based alloy (X═Zr, Nb, Hf, Ta). | 05-21-2009 |
20090179220 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - The present invention provides a semiconductor light-emitting device capable of effectively emitting ultraviolet light and a method of manufacturing the same. | 07-16-2009 |
20090267103 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF - The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer | 10-29-2009 |
20090278158 | GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced. | 11-12-2009 |
20090283793 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF - Disclosed is a semiconductor device which is improved in output power efficiency since reflection by the substrate is reduced. This semiconductor device is also excellent in strength characteristics of a supporting substrate. Also disclosed is a method for producing such a semiconductor device. Specifically disclosed is a nitride semiconductor device wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially stacked in this order on a substrate. This nitride semiconductor device is characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer. Also disclosed is a nitride semiconductor device having a structure wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially stacked in this order, the device characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer and a light-transmitting material layer is formed on the p-type semiconductor layer in a region where the metal film layer and the plated metal plate are not formed. | 11-19-2009 |
20090309119 | Gallium Nitride Based Compound Semiconductor Light-Emitting Device and Method for manufacturing Same - The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a method of manufacturing the same. The gallium nitride based compound semiconductor light-emitting device includes: a substrate | 12-17-2009 |
20100051981 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - There is provided a semiconductor light-emitting device having excellent light extraction efficiency and low wavelength unevenness, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device includes an n-type semiconductor layer | 03-04-2010 |
20100052007 | LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP - The present invention provides a light-emitting device comprising an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer and a titanium oxide-based conductive film layer laminated in this order, wherein the titanium oxide-based conductive film layer comprises a first layer as a light extraction layer and a second layer as a current diffusion layer, the second layer being arranged on the p-type semiconductor layer side of the first layer, a method of manufacturing a light-emitting device, and a lamp. | 03-04-2010 |
20100136727 | PRODUCTION METHOD FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention provides a production method for a nitride semiconductor light emitting device, which warps less after removing the substrate, and which can emit light from the side thereof; specifically, the present invention provides a production method for a nitride semiconductor light emitting device comprising: forming stacked layers by stacking at least an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a substrate in this order; forming grooves which divide the stacked layers so as to correspond to nitride semiconductor light emitting devices to be produced; filling the grooves with a sacrifice layer; and forming a plate layer on the p-type semiconductor layer and the sacrifice layer by plating. | 06-03-2010 |
20100163886 | GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND LAMP INCLUDING THE SAME - The present invention provides a gallium nitride compound semiconductor light-emitting device that prevents an increase in the specific resistance of a p-type semiconductor layer due to hydrogen annealing and reduces the specific resistance of a translucent conductive oxide film to lower a driving voltage Vf, a method of manufacturing the same, and a lamp including the same. The method of manufacturing the gallium nitride compound semiconductor light-emitting device includes: forming a positive electrode | 07-01-2010 |
20100230714 | METHOD FOR PRODUCING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LAMP USING THE SAME - A method for producing a gallium nitride based compound semiconductor light emitting device that is excellent in terms of light emission efficiency and is also capable of operating at a low driving voltage, a gallium nitride based compound semiconductor light emitting device, and a lamp using the device are provided, and the method for producing a gallium nitride based compound semiconductor light emitting device includes a first crystal growth step in which an n-type semiconductor layer | 09-16-2010 |
20110104837 | GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING HIGH EMISSION EFFICIENCY AND METHOD OF MANUFACTURING THE SAME - The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based compound semiconductor light-emitting device includes a p-type semiconductor layer, and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer. A dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than the bulk dopant concentration of the transparent conductive oxide film. Therefore, the contact resistance between the p-type semiconductor layer and the transparent conductive oxide film is reduced. | 05-05-2011 |
20120097922 | LIGHT EMITTING ELEMENT, METHOD OF PRODUCING SAME, LAMP, ELECTRONIC EQUIPMENT, AND MECHINICAL APPARATUS - There is provided a light-emitting element in which the driving voltage is reduced and light extraction efficiency is improved, a method of manufacturing the light-emitting element, a lamp, electronic equipment, and a mechanical apparatus. This is achieved by using a light-emitting element ( | 04-26-2012 |
20120228665 | METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (VI) and high light outcoupling efficiency, a gallium nitride-based compound semiconductor light-emitting device, and a lamp. In the method of manufacturing the gallium nitride-based compound semiconductor light-emitting device, a transparent conductive oxide film ( | 09-13-2012 |