Patent application number | Description | Published |
20080217301 | Laser beam processing machine - A laser beam processing machine comprising a laser beam application means for applying a pulse laser beam to a workpiece held on a chuck table and a controller, wherein the laser beam application means comprises a laser beam oscillation means for oscillating a pulse laser beam, an optical axis changing means for deflecting the optical axis of a pulse laser beam oscillated from the laser beam oscillation means in the processing-feed direction, and a condenser for converging a pulse laser beam whose optical axis has been deflected by the optical axis changing means; and the controller comprises a memory for storing a plurality of processing position coordinates set in the workpiece, controls the optical axis changing means according to the frequency of a pulse laser beam oscillated from the laser beam oscillation means and determines a plurality of predetermined processing position coordinates to be processed to ensure that the time interval between pulses of the pulse laser beam to be applied to the same processing position coordinates becomes a predetermined time or more when one pulse of the pulse laser beam is applied each time to a plurality of predetermined processing position coordinates to be processed sequentially and the pulse laser beam is applied to a plurality of predetermined processing position coordinates to be processed a predetermined number of times sequentially repeatedly. | 09-11-2008 |
20080242055 | WAFER LASER PROCESSING METHOD AND LASER PROCESSING EQUIPMENT - A wafer laser processing method for forming a groove in a wafer having a plurality of areas which are sectioned by streets formed in a lattice pattern on the front surface of a substrate, a device being formed in each of the plurality of areas, and an insulating film being formed on the surfaces of the devices, by applying a pulse laser beam along the streets, the method comprising a heating step for applying a first pulse laser beam set to an output for preheating the insulating film so as to soften it to the insulating film and a processing step for applying a second pulse laser beam set to an output for processing the insulating film and the substrate to the spot position of the first pulse laser beam applied in the heating step, the heating step and the processing step being carried out along the streets alternately. | 10-02-2008 |
20090230103 | LASER BEAM PROCESSING MACHINE - A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, a processing-feed means for moving the chuck table and the laser beam application means relative to each other in a processing-feed direction (X-axis direction), and an indexing-feed means for moving the chuck table and the laser beam application means relative to each other in an indexing-feed direction (Y-axis direction) perpendicular to the processing-feed direction (X-axis direction), wherein the laser beam application means comprises a laser oscillation means for oscillating a laser beam, a first acousto-optic deflection means for deflecting the optical axis of a laser beam oscillated by the laser beam oscillation means in the processing-feed direction (X-axis direction), and a second acousto-optic deflection means for deflecting the optical axis of a laser beam oscillated by the laser beam oscillation means in the indexing-feed direction (Y-axis direction). | 09-17-2009 |
20090266800 | LASER PROCESSING METHOD FOR TRANSPARENT PLATE - A laser processing method for a transparent plate having a predetermined breaking line including the step of applying a pulsed laser beam to the transparent plate along the breaking line to thereby form a laser processed groove. The pulsed laser beam has an absorption wavelength to the transparent plate. The repetition frequency of the pulsed laser beam is set to 200 kHz or more and the energy density per pulse of the pulsed laser beam is set to 3.8 J/cm | 10-29-2009 |
20130134142 | LASER PROCESSING APPARATUS - A laser processing apparatus includes a beam diameter adjusting unit provided between a laser oscillator and a focusing unit, an imaging unit for detecting the beam diameter of the laser beam directed to a detection path, an optical path length changing unit for moving the imaging unit along the detection path to thereby change an optical path length, and a controller for controlling the imaging unit, the beam diameter adjusting unit, and the optical path length changing unit. The controller operates to move the imaging unit to two positions where different optical path lengths are provided, detect the beam diameters of the laser beam at the two positions, and controls the beam diameter adjusting unit according to the two beam diameters detected above so that the two beam diameters have a predetermined relation. | 05-30-2013 |
20130137203 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer processing method for processing an optical device wafer having an epitaxy substrate and an optical device layer formed on the front side of the epitaxy substrate through a buffer layer. The buffer layer of the optical device wafer is to be broken in the condition where the optical device layer of the optical device wafer is bonded through a bonding metal layer to a transfer substrate. The optical device wafer processing method includes a buffer layer breaking step of applying a pulsed laser beam having a wavelength having transmissivity to the epitaxy substrate and having absorptivity to the buffer layer from the back side of the epitaxy substrate to the buffer layer, thereby breaking the buffer layer. The buffer layer breaking step includes a first laser beam applying step of completely breaking the buffer layer corresponding to an optical device area and a second laser beam applying step of incompletely breaking the buffer layer corresponding to a peripheral marginal area. | 05-30-2013 |
20130193122 | LASER PROCESSING APPARATUS - A laser processing apparatus includes a plasma detecting unit for detecting a wavelength of plasma light generated by applying a pulsed laser beam from a laser beam applying unit to a workpiece. The plasma detecting unit includes a bandpass filter for passing only the wavelength of plasma light generated from a first material and a photodetector for detecting the light passed through the bandpass filter. A light intensity signal is output to a controller. The controller controls the laser beam applying unit so that the amplitude of a light intensity is detected according to the light intensity signal output from the photodetector. The pulsed laser beam is stopped after the amplitude of the light intensity is decreased to a predetermined value and a predetermined number of shots of the pulsed laser beam has been applied. | 08-01-2013 |
20130206736 | LASER PROCESSING APPARATUS SUITABLE FOR FORMATION OF LASER PROCESSED HOLE - A laser processing apparatus detects the wavelength of plasma light generated by applying a pulsed laser beam to a workpiece. A plasma detecting unit includes a first bandpass filter for passing only the wavelength of plasma light separated into a first optical path by a beam splitter, a first photodetector for detecting the light passed through the first bandpass filter, a second bandpass filter for passing only the wavelength of plasma light separated into a second optical path by the beam splitter, and a second photodetector for detecting the light passed through the second bandpass filter. In performing laser processing, the pulsed laser beam is stopped when the light intensity detected by the first photodetector is decreased and the light intensity detected by the second photodetector is increased to a peak value and then decreased to a given value slightly less than the peak value. | 08-15-2013 |
20130213946 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser processing method of applying a laser beam to a workpiece having a plurality of members, thereby forming a laser processed groove on the workpiece. The laser processing method includes the steps of setting a plurality of processing conditions respectively corresponding to a plurality of different materials forming the plurality of members constituting the workpiece, detecting the wavelengths of plasma lights generated by applying the laser beam to the plurality of members constituting the workpiece, selecting any suitable one of the processing conditions corresponding to any one of the members corresponding to the wavelength of plasma lights detected above, and applying the laser beam under the processing condition selected above. | 08-22-2013 |
20130240494 | LASER PROCESSING APPARATUS - A laser processing apparatus including a workpiece holding unit for holding a workpiece and a laser beam applying unit for applying a laser beam to the workpiece held by the workpiece holding unit. The laser beam applying unit includes a laser oscillator for oscillating a laser beam, a focusing unit for focusing the laser beam oscillated by the laser oscillator onto the workpiece held by the workpiece holding unit, and an optical system provided between the laser oscillator and the focusing unit for transmitting the laser beam oscillated by the laser oscillator. The laser beam applying unit further includes a wavelength converting mechanism provided between the optical system and the focusing unit for converting the wavelength of the laser beam oscillated by the laser oscillator into a short wavelength. | 09-19-2013 |
20130256279 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser processed hole is formed in a workpiece. The workpiece has a first member formed of a first material bonded to a second member formed of a second material. The laser processed hole extends through the first member to the second member. The wavelength of plasma light generated by applying a pulsed laser beam to the first member and the second member is detected. Application of the laser beam is continued at a first power until the plasma light intensity generated from only the first member is decreased to reach a predetermined value. The laser beam is applied at a second power which is lower than the first power so as to not generate cracks in the first member when the plasma light intensity has reached the predetermined value. Application of the plasma laser beam stops when plasma light generated from the second member is detected. | 10-03-2013 |
20140014631 | LASER PROCESSING METHOD - A laser processing method of applying a pulsed laser beam having a repetition frequency of 20 kHz or more to a workpiece to thereby process the workpiece. The relation between the wavelength of the pulsed laser beam and the pulse width generating no cracks is determined by experiment on the basis of the absorption edge of the workpiece, thereby setting the processing conditions. The relation between various set values for the wavelength and the limits of the pulse width is plotted to prepare a graph having a vertical axis representing the wavelength and a horizontal axis representing the pulse width. The pulsed laser beam is applied in the region below a curve obtained by connecting the limits of the pulse width at the various set values for the wavelength. | 01-16-2014 |
20140080289 | METHOD OF FORMING GETTERING LAYER - Disclosed herein is a method of forming a gettering layer for capturing metallic ions on the back side of a semiconductor wafer formed with devices on the face side thereof. The method includes irradiating the back-side surface of the semiconductor wafer with a pulsed laser beam having a pulse width corresponding to a thermal diffusion length of 10 to 230 nm, to thereby form the gettering layer. | 03-20-2014 |
20140213040 | LASER PROCESSING METHOD - A laser processing method for performing laser processing to a workpiece. The laser processing method includes: a filament forming step of applying a first pulsed laser beam having a transmission wavelength to the workpiece to thereby form a filament as an optical transmission line in the workpiece so that the filament extends from the surface of the workpiece to be irradiated with the first pulsed laser beam to the inside of the workpiece, the filament having a refractive index higher than that of the workpiece; and a laser processing step of applying a second pulsed laser beam to the filament after performing the filament forming step to thereby transmit the second pulsed laser beam along the filament, thereby processing the workpiece with the second pulsed laser beam. | 07-31-2014 |
20140248757 | WAFER PROCESSING METHOD - A wafer processing method for dividing a wafer along a plurality of division lines to obtain a plurality of individual chips. The wafer processing method includes a filament forming step of applying a pulsed laser beam having a transmission wavelength to the wafer along each division line in the condition where the focal point of the pulsed laser beam is set inside the wafer in a subject area to be divided, thereby forming a plurality of amorphous filaments inside the wafer along each division line, and an etching step of etching the amorphous filaments formed inside the wafer along each division line by using an etching agent to thereby divide the wafer into the individual chips along the division lines. | 09-04-2014 |
20140256150 | WAFER PROCESSING METHOD - A wafer processing method for forming a via hole in a wafer. The wafer processing method includes a filament forming step of applying a pulsed laser beam to the wafer, the pulsed laser beam having a transmission wavelength to the wafer, in the condition where the focal point of the pulsed laser beam is set inside the wafer in a subject area where the via hole is to be formed, thereby forming an amorphous filament inside the wafer in the subject area, and an etching step of etching the amorphous filament formed inside the wafer by using an etching agent to thereby form the via hole inside the wafer. | 09-11-2014 |
20140334511 | LASER PROCESSING METHOD - A laser processing method of applying a pulsed laser beam to a single crystal substrate to thereby process the single crystal substrate. The laser processing method includes a numerical aperture setting step of setting the numerical aperture (NA) of a focusing lens for focusing the pulsed laser beam so that the value obtained by dividing the numerical aperture (NA) of the focusing lens by the refractive index (N) of the single crystal substrate falls within the range of 0.05 to 0.2, a positioning step of relatively positioning the focusing lens and the single crystal substrate in the direction along the optical axis of the focusing lens so that the focal point of the pulsed laser beam is set at a desired position in the direction along the thickness of the single crystal substrate, and a shield tunnel forming step of applying the pulsed laser beam to the single crystal substrate so as to focus the pulsed laser beam at the focal point set in the single crystal substrate thereby forming a shield tunnel extending between the focal point and a beam incident surface to which the pulsed laser beam is applied. | 11-13-2014 |
20150044799 | OPTICAL DEVICE WAFER PROCESSING METHOD - In an optical device wafer processing method, a light emitting layer on the front side of a wafer is removed by applying a pulsed laser beam to the wafer along division lines from the back side of a substrate with the focal point of the beam set near the light emitting layer, thereby partially removing the light emitting layer along the division lines. A shield tunnel is formed by applying the beam to the wafer along the division lines from the back of the substrate with the focal point of the beam set near the front of the substrate. This forms a plurality of shield tunnels arranged along each division line, each shield tunnel extending from the front side of the substrate to the back side thereof. Each shield tunnel has a fine hole and an amorphous region formed around the fine hole for shielding the fine hole. | 02-12-2015 |