Patent application number | Description | Published |
20090025840 | Cu-Ni-Si-Co-Cr Copper Alloy for Electronic Materials and Method for Manufacturing Same - The invention provides Cu—Ni—Si—Co—Cr copper alloys for electronic materials having excellent characteristics such as dramatically improved strength and electrical conductivity. In one aspect, the invention is a Cu—Ni—Si—Co—Cr copper alloy for electronic materials, containing about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and about 0.09-about 0.5% by weight of Cr, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si in the alloy composition satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co in the alloy composition satisfies the formula: about 0.5≦Ni/Co≦about 2, and wherein Pc is equal to or less than about 15/1000 μm | 01-29-2009 |
20090035174 | Copper Alloy for Electronic Materials - The invention provides Cu—Ni—Si alloys containing Co, and having excellent strength and conductivity. A copper alloy for electronic materials in accordance with the invention contains about 0.5-about 2.5% by weight of Ni, about 0.5-about 2.5% by weight of Co, about 0.30-about 1.2% by weight of Si, and the balance being Cu and unavoidable impurities, wherein the ratio of the total weight of Ni and Co to the weight of Si ([Ni+Co]/Si ratio) satisfies the formula: about 4≦[Ni+Co]/Si≦about 5, and the ratio of Ni to Co (Ni/Co ratio) satisfies the formula: about 0.5≦Ni/Co≦about 2. | 02-05-2009 |
20090301614 | CU-NI-SI-CO COPPER ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR MANUFACTURING SAME - The invention provides Cu—Ni—Si—Co alloys having excellent strength, electrical conductivity, and press-punching properties. In one aspect, the invention is a copper alloy for electronic materials, containing 1.0 to 2.5 mass % of Ni, 0.5 to 2.5 mass % of Co, and 0.30 to 1.2 mass % of Si, the balance being Cu and unavoidable impurities, wherein the copper alloy for electronic material has a [Ni+Co+Si] content in which the median value ρ (mass %) satisfies the formula 20 (mass %)≦ρ≦60 (mass %), the standard deviation σ (Ni+Co+Si) satisfies the formula σ (Ni+Co+Si)≦30 (mass %), and the surface area ratio S (%) satisfies the formula 1%≦S≦10%, in relation to the compositional variation and the surface area ratio of second-phase particles size of 0.1 μm or greater and 1 μm or less when observed in a cross section parallel to a rolling direction. | 12-10-2009 |
20110027122 | Cu-Ni-Si-Co-Cr System Alloy for Electronic Materials - The problem to be solved by the present invention is to provide a significant improvement in the properties in Cu—Ni—Co—Si alloy by adding Cr, i.e., to provide Corson alloys having high strength and high electrical conductivity. There is provided a copper alloy for electronic materials comprising 1.0 to 4.5 mass % of Ni, 0.50 to 1.2 mass % of Si, 0.1 to 2.5 mass % of Co, 0.003 to 0.3 mass % of Cr, with the balance being Cu and unavoidable impurities, the mass concentration ratio of the total mass of Ni and Co to Si ([Ni+Co]/Si ratio) satisfies the formula: 4≦[Ni+Co]/Si≦5, and with regard to Cr—Si compound whose size is 0.1 to 5 μm dispersed in the material, atomic concentration ratio of Cr to Si in the dispersed particle is 1-5, and area dispersion density thereof is more than 1×10 | 02-03-2011 |
20110240182 | Ni-Si-Co COPPER ALLOY AND MANUFACTURING METHOD THEREFOR - Disclosed is a Ni—Si—Co copper alloy that is suitable for use for various kinds of electronic parts and has particularly good uniform plating adhesion properties. The copper alloy for electronic materials comprises Ni: 1.0-2.5 mass %, Co: 0.5-2.5 mass % and Si: 0.3-1.2 mass % and the remainder is made of Cu and unavoidable impurities. For the copper alloy for electronic materials, the mean crystal size, at the plate thickness center, is 20 μm or less, and there are five or fewer crystal particles that contact the surface and have a long axis of 45 μm or greater per 1 mm rolling direction length. The copper alloy may comprise a maximum of 0.5 mass % Cr and may comprise a maximum in total of 2.0 mass % of one, two or more selected from a group comprising Mg, P, As, Sb, Be, B, Mn, Sn, Ti, Zr, Al, Fe, Zn and Ag. | 10-06-2011 |
20110244260 | Cu-Ni-Si-Co COPPER ALLOYS FOR ELECTRONIC MATERIALS AND MANUFACTURING METHODS THEREOF - Provided is a Cu—Ni—Si—Co based copper alloy with which high levels of strength and conductivity are achieved, and that also has excellent permanent fatigue resistance. The copper alloy for electronic materials contains Ni: 1.0-2.5 mass %, Co: 0.5-2.5 mass %, and Si: 0.3-12 mass %, and the remainder comprises Cu and unavoidable impurities. Of the second phase particles precipitated in the matrix, the number density of those having a particle diameter of 5-50 nm is 1×10 | 10-06-2011 |
20120031533 | Cu-Co-Si SYSTEM ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR MANUFACTURING SAME - The present invention provides Cu—Co—Si system alloys that have desirable mechanical and electrical characteristics as a copper alloy for electronic materials, and have uniform mechanical characteristics. The copper alloys for electronic materials contain 0.5 to 4.0 mass % Co, 0.1 to 1.2 mass % Si, and the balance being Cu and unavoidable impurities. An average grain size is 15 to 30 μm and an average difference between maximum grain size and minimum grain size in every observation field of 0.5 mm | 02-09-2012 |
20130004793 | COPPER ALLOY FOR ELECTRONIC MATERIAL AND METHOD OF MANUFACTURE FOR SAME - There is provided a copper alloy for electronic material which exhibits excellent plating uniformity. A copper alloy for electronic material, wherein, when its cross section parallel to a rolling direction is observed by SIM, an area ratio of amorphous structure and crystal grains having a grain size of less than 0.1 μm at a depth range of 0.5 μm or less from the surface is 1% or less, and a ratio of the number of crystal grains having a grain size of at least 0.1 μm and less than 0.2 μm to the overall number of crystal grains having a grain size of at least 0.1 μm at a depth range of 0.2-0.5 μm from the surface is 47.5% or more. | 01-03-2013 |
20130087255 | Cu-Co-Si-BASED COPPER ALLOY FOR ELECTRONIC MATERIALS, AND METHOD OF MANUFACTURING SAME - Disclosed is a Cu—Co—Si-based copper alloy for electronic materials, which is capable of achieving high levels of strength, electrical conductivity, and also anti-setting property; and contains 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities; wherein out of second phase particles precipitated in the matrix a number density of the particles having particle size of 5 nm or larger and 50 nm or smaller is 1×10 | 04-11-2013 |
20130180630 | Cu-Co-Si-BASED ALLOY FOR ELECTRONIC MATERIAL AND METHOD OF MANUFACTURING THE SAME - A Cu—Co—Si-based alloy that has even mechanical properties and that is provided with favorable mechanical and electrical properties as a copper alloy for an electronic material is provided. The copper alloy for an electronic material comprises 0.5% by mass to 3.0% by mass of Co, 0.1% by mass to 1.0% by mass of Si, and the balance Cu with inevitable impurities. An average grain size is in the range of 3 μm to 15 μm and an average difference between a maximum grain size and a minimum grain size in every observation field of 0.05 mm | 07-18-2013 |
20130263978 | Cu-Ni-Si-Co COPPER ALLOY FOR ELECTRONIC MATERIALS AND MANUFACTURING METHOD THEREOF - Cu—Ni—Si—Co copper alloy strip having excellent balance between strength and electrical conductivity which can prevent the drooping curl is provided. The copper alloy strip for an electronic materials contains 1.0-2.5% by mass of Ni, 0.5-2.5% by mass of Co, 0.3-1.2% by mass of Si, and the remainder comprising Cu and unavoidable impurities, wherein the copper alloy strip satisfies both of the following (a) and (b) as determined by means of X-ray diffraction pole figure measurement based on a rolled surface: (a) among a diffraction peak intensities obtained by β scanning at α=20° in a {200} pole figure, a peak height at β angle 145° is not more than 5.2 times that of standard copper powder; (b) among a diffraction peak intensities obtained by β scanning at α=75° in a {111} pole figure, a peak height at β angle 185° is not less than 3.4 times that of standard copper powder. | 10-10-2013 |
20140014240 | Cu-Si-Co-BASED COPPER ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR PRODUCING THE SAME - A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at β angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by β scanning at α=35° is at least 2.5 times that of a standard copper powder. | 01-16-2014 |
20140014241 | STRIP OF Cu-Co-Si-BASED COPPER ALLOY FOR ELECTRONIC MATERIALS AND THE METHOD FOR PRODUCING THE SAME - Cu—Co—Si-based alloy strip, which has not only an excellent balance between strength and electrical conductivity but also suppressed hanging curl, is provided. The copper alloy strip for electronic materials comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, the following (a) is satisfied.
| 01-16-2014 |